Optocoupler, Phototransistor Output, no Base …

1 Semiconductors Rev. , 08-Jan-141 Document Number: 83607 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT , Phototransistor Output, no Base ConnectionDESCRIPTIONThe CNY17F is an optocoupler consisting of a gallium arsenide infrared emitting diode optically coupled to a silicon planar Phototransistor detector in a plastic plug-in DIP-6 coupling device is suitable for signal transmission between two electrically separated circuits. The potential difference between the circuits to be coupled is not allowed to exceed the maximum permissible reference contrast to the CNY17 series, the base terminal of the F type is not conected, resulting in a substantially improved common-mode interference Isolation test voltage, 5000 VRMS No base terminal connection for improved common mode interface immunity Long term stability Industry standard dual-in-line package Material categorization.

2 For definitions of compliance please see AGENCY APPROVALSS afety application model number covering all products in this datasheet is CNY17F. This model number should be used when consulting safety agency documents. UL file no. E52744 cUL tested to CSA bulletin 5A DIN EN 60747-5-5 (VDE 0884-5), available with option 1 BSI: EN 60065, EN 60950-1 FIMKO EN60950 CQC GB8898-2011 Notes Additional options may be possible, please contact sales office.(1)Also available in tubes; do not put T on INFORMATIONCNY17F - #X0##TPART NUMBERCTR BINPACKAGE OPTION TAPEANDREELAGENCY CERTIFIED/PACKAGECTR (%)UL, cUL, BSI, FIMKO40 to 8063 to 125100 to 200160 to 320 DIP-6 CNY17F-1 CNY17F-2 CNY17F-3 CNY17F-4 DIP-6, 400 mil, option 6 CNY17F-1X006 CNY17F-2X006 CNY17F-3X006 CNY17F-4X006 SMD-6, option 7 CNY17F-1X007 (1)CNY17F-2X007T (1)CNY17F-3X007T (1)CNY17F-4X007T (1)SMD-6, option 9 CNY17F-1X009T (1)CNY17F-2X009T (1)CNY17F-3X009T (1)CNY17F-4X009T (1)

3 VDE, UL, cUL, BSI, FIMKO40 to 8063 to 125100 to 200160 to 320 DIP-6 CNY17F-1X001 CNY17F-2X001 CNY17F-3X001 CNY17F-4X001 DIP-6, 400 mil, option 6 CNY17F-1X016 CNY17F-2X016 CNY17F-3X016 CNY17F-4X016 SMD-6, option 7 CNY17F-1X017 (1)CNY17F-2X017 (1)CNY17F-3X017 (1)CNY17F-4X017 (1)SMD-6, option 9 CNY17F-1X019 CNY17F-2X019 (1)CNY17F-3X019 (1) mm> 8 mm8 mm 7 Option 6 Option Semiconductors Rev. , 08-Jan-142 Document Number: 83607 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT Stresses in excess of the absolute maximum ratings can cause permanent damage to the device.

4 Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability.(1)Refer to reflow profile for soldering conditions for surface mounted parts (SMD). Refer to wave profile for soldering conditions for through hole parts (DIP). Fig. 1 - Total Power Dissipation vs. Ambient TemperatureABSOLUTE MAXIMUM RATINGS (Tamb = 25 C, unless otherwise specified)PARAMETERTEST CONDITIONSYMBOLVALUEUNITINPUTR everse voltageVR6 VDC forward currentIF60mASurge forward currentt 10 dissipationPdiss100mWOUTPUTC ollector emitter breakdown voltageBVCEO70 VCollector currentIC50mACollector peak currenttp/T = , tp 10 msICM100mAOutput power dissipationPdiss150mWCOUPLERI solation test voltage between emitter and detectort = 1 minVISO5000 VRMSS torage temperature rangeTstg-55 to +150 CAmbient temperature rangeTamb-55 to +110 CJunction temperatureTj100 CSoldering temperature (1)

5 2 mm from case, 10 sTsld260 CTotal power dissipationPdiss250mWELECTRICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified)PARAMETERTEST voltageIF = 60 voltageIR = 10 AVBR6 VReverse currentVR = 6 ACapacitanceVR = 0 V, f = 1 MHzCO25pFOUTPUTC ollector emitter capacitanceVCE = 5 V, f = 1 collector capacitanceVCE = 5 V, f = 1 base capacitanceVCE = 5 V, f = 1 50 100 150 200 250 300 0 20 40 60 80 100 120 Ptot - Total Power Dissipation (mW) Tamb - Ambient Temperature ( C) Coupled device Phototransistor IR-diode Semiconductors Rev. , 08-Jan-143 Document Number: 83607 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE.

6 THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT Minimum and maximum values were tested requierements. Typical values are characteristics of the device and are the result of engineering evaluations. Typical values are for information only and are not part of the testing Current transfer ratio IC/IF at VCE = 5 V, 25 C and collector emitter leakage current by dash emitter, saturation voltageIF = 10 mA, IC = emitter, leakage currentVCE = 10 VCNY17F-1 ICEO250nACNY17F-2 ICEO250nACNY17F-3 ICEO5100nACNY17F-4 ICEO5100nACURRENT TRANSFER RATIO (Tamb = 25 C, unless otherwise specified)

7 PARAMETERTEST = 10 mACNY17F-1 CTR4080%CNY17F-2 CTR63125%CNY17F-3 CTR100200%CNY17F-4 CTR160320%IF = 1 mACNY17F-1 CTR1330%CNY17F-2 CTR2245%CNY17F-3 CTR3470%CNY17F-4 CTR5690%SWITCHING CHARACTERISTICS (Tamb = 25 C, unless otherwise specified)PARAMETERTEST OPERATION (without saturation)Turn-on timeIF = 10 mA, VCC = 5 V,RL = 75 ton3 sRise timeIF = 10 mA, VCC = 5 V,RL = 75 tr2 sTurn-off timeIF = 10 mA, VCC = 5 V,RL = 75 sFall timeIF = 10 mA, VCC = 5 V,RL = 75 tf2 sCut-off frequencyIF = 10 mA, VCC = 5 V,RL = 75 fCO110kHzSWITCHING OPERATION (with saturation)Turn-on timeIF = 20 mACNY17F-1ton3 sIF = 10 sIF = 5 mACNY17F-4ton6 sRise timeIF = 20 mACNY17F-1tr2 sIF = 10 mACNY17F-2tr3 sCNY17F-3tr3 sIF = 5 sTurn-off timeIF = 20 mACNY17F-1toff18 sIF = 10 mACNY17F-2toff23 sCNY17F-3toff23 sIF = 5 mACNY17F-4toff25 sFall timeIF = 20 mACNY17F-1tf11 sIF = 10 mACNY17F-2tf14 sCNY17F-3tf14 sIF = 5 mACNY17F-4tf15 sELECTRICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified)PARAMETERTEST Semiconductors Rev.

8 , 08-Jan-144 Document Number: 83607 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT Fig. 2 - Test Circuit, Non-Saturated Operation Fig. 3 - Test Circuit, Saturated Operation Fig. 4 - Switching Times Note As per DIN EN 60747-5-5, , this optocoupler is suitable for safe electrical insulation only within the safety ratings. Compliance with the safety ratings shall be ensured by means of protective I Channel II95 10804-3RG = 50 tptp = 50 s T= + 5 V IF050 RLIFO scilloscopeRL= 1 M CL= 20 pFChannel IChannel II95 10843RG= 50 tptp= 50 sT= + 5 VICIF050 1 k IF= 10 mAOscilloscopeRL CL20 pF 1 M tptt0010 %90 %100 %trtdtontstftoffIFICtpPulse durationtdDelay timetrRise timeton(= td + tr) Turn-on timetsStorage timetfFall timetoff(= ts + tf)

9 Turn-off time96 11698 SAFETY AND INSULATION RATINGSPARAMETERSYMBOLVALUEUNITMAXIMUM SAFETY RATINGSO utput safety powerPSO700mWInput safety currentISI400mASafety temperatureTSI175 CComparative tracking indexCTI175 INSULATION RATED PARAMETERSM aximum withstanding isolation voltageVISO5000 VRMSM aximum transient isolation voltageVIOTM8000 VpeakMaximum repetitive peak isolation voltageVIORM890 VpeakInsulation resistanceTamb = 25 C, VDC = 500 VRIO 1012 Isolation resistanceTamb = 100 C, VDC = 500 VRIO 1011 Climatic classification (according to IEC 68 part 1)55/115/21 Environment (pollution degree in accordance to DIN VDE 0109)2 Creepage distanceStandard DIP-4 7mmSMD 7mmClearance distanceStandard DIP-4 8mmSMD 8mmInsulation thicknessDTI Semiconductors Rev.

10 , 08-Jan-145 Document Number: 83607 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT CHARACTERISTICS (Tamb = 25 C, unless otherwise specified) Fig. 5 - Forward Voltage vs. Forward Current Fig. 6 - Collector Current vs. Collector Emitter Voltage (NS) Fig. 7 - Collector Current vs. Collector Emitter Voltage (sat) Fig. 8 - Leakage Current vs. Ambient Temperature Fig. 9 - Normalized CTR (NS) vs. Ambient Temperature Fig. 10 - Normalized CTR (sat) vs. Ambient - Forward Current (mA)VF - Forward Voltage (V)Tamb = - 55 = - 40 CTamb = 100 CTamb = 75 CTamb = 50 CTamb = 25 CTamb = 0 CTamb = - 25 = 110 C020304050600178 VCE - Collector Emitter Voltage (NS) (V)IC - Collector Current (mA)1065432IF = 20 mAIF = 15 mAIF = 10 mAIF = 30 mAIF = 5 - Collector Emitter Voltage (sat) (V)IC - Collector Current (mA) = 10 mAIF = 25 mAIF = 5 mAIF = 2 mAIF = 1 000- 60100 Tamb - Ambient Temperature ( C)ICE0 - Leakage Current (nA)VCE = 40 V- 40806040200- 20IF = 0 mAVCE = 12 VVCE = 24 - Ambient Temperature ( C)CTRNorm - Normalized CTR (NS)