N-Channel 60-V (D-S) MOSFET - Vishay …

1 Vishay SiliconixSi2308 BDSD ocument Number: 69958S-83053-Rev. B, ProductN-Channel 60-V (D-S) MOSFETFEATURES Halogen-free According to IEC 61249-2-21 Available TrenchFET Power MOSFET 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Battery Switch DC/DC ConverterPRODUCT SUMMARY VDS (V)RDS(on) ( )ID (A)aQg (Typ.) at VGS = 10 V at VGS = V Information: Si2308 BDS-T1-E3 (Lead (Pb)-free) Si2308 BDS-T1-GE3 (Lead (Pb)-free and Halogen-free)GSDTop View23TO-236(SSOT23)1Si2308 BDS (L8)**Marking CodeNotes: a. Based on TC = 25 Surface Mounted on 1" x 1" FR4 t = 5 Maximum under Steady State conditions is 130 MAXIMUM RATINGS TA = 25 C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage VDS60 VGate-Source VoltageVGS 20 Continuous Drain Current (TJ = 150 C)

2 TC = 25 = 70 = 25 , cTA = 70 , cPulsed Drain Current IDM8 Continuous Source-Drain Diode Current TC = 25 = 25 , cAvalanche Current L = mHIAS6 Single-Pulse Avalanche Power Dissipation TC = 25 = 70 = 25 , cTA = 70 , cOperating Junction and Storage Temperature Range TJ, Tstg- 55 to 150 CTHERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit Maximum Junction-to-Ambientb, d 5 sRthJA90115 C/WMaximum Junction-to-Foot (Drain)Steady StateRthJF6075 Vishay Number: 69958S-83053-Rev. B, 29-Dec-08 New ProductNotes:a. Pulse test; pulse width 300 s, duty cycle 2 %.

3 B. Guaranteed by design, not subject to production beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operationof the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximumrating conditions for extended periods may affect device SPECIFICATIONS TJ = 25 C, unless otherwise notedParameter Symbol Test Conditions StaticDrain-Source Breakdown VoltageVDS VDS = 0 V, ID = 250 A 60 VVDS Temperature Coefficient VDS/TJ ID = 250 A 55mV/ CVGS(th) Temperature Coefficient VGS(th)/TJ - 5 Gate-Source Threshold VoltageVGS(th)

4 VDS = VGS, ID = 250 A 13 VGate-Source LeakageIGSSVDS = 0 V, VGS = 20 V 100nAZero Gate Voltage Drain CurrentIDSSVDS = 60 V, VGS = 0 V 1 AVDS = 60 V, VGS = 0 V, TJ = 55 C 10On-State Drain CurrentaID(on) VDS 5 V, VGS = 10 V 8 ADrain-Source On-State ResistanceaRDS(on) VGS = 10 V, ID = A VGS = V, ID = A Transconductanceagfs VDS = 15V, ID = A 5 SDynamicbInput CapacitanceCiss VDS = 30 V, VGS = 0 V, f = 1 MHz190pFOutput CapacitanceCoss 26 Reverse Transfer CapacitanceCrss 15 Total Gate ChargeQg VDS = 30 V, VGS = 10 V, ID = = 30 V, VGS = V, ID = ChargeQgs ChargeQgd 1 Gate ResistanceRg f = 1 Tu r n - O n D e l a y T i m etd(on) VDD = 30 V, RL = 20 ID A, VGEN = 10 V, RG = 1 46nsRise Timetr1015 Turn-Off Delay Timetd(off) 1015 Fall r n - O n D e l a y T i m etd(on) VDD = 30 V, RL = 20 ID = A, VGEN = V, RG = 1 1523nsRise Timetr1624 Turn-Off Delay Timetd(off) 1117 Fall Timetf1117 Drain-Source Body Diode CharacteristicsContinuous Source-Drain Diode CurrentISTC = 25 Diode Forward CurrentaISM8 Body Diode VoltageVSDIS = Diode Reverse Recovery TimetrrIF = A, dI/dt = 100 A/ s, TJ = 25 C1523nsBody Diode Reverse Recovery ChargeQrr1015nCReverse Recovery Fall Timeta12nsReverse Recovery Rise Timetb3 Document Number: 69958S-83053-Rev.

5 B, SiliconixSi2308 BDSNew ProductTYPICAL CHARACTERISTICS 25 C, unless otherwise notedOutput CharacteristicsOn-Resistance vs. Drain Current and Gate VoltageGate Charge0246810012345 VDS- Drain-to-SourceVoltage (V)- Drain Current (A)IDVGS=10thru5 VVGS=2 VVGS=3 VVGS= On-Resistance ( )RDS(on)ID- Drain Current (A)VGS=10 VVGS= Gate-to-SourceVoltage (V)Qg- Total Gate Charge (nC)VGSVDS=48 VVDS=30 VTransfer CharacteristicsCapacitanceOn-Resistance vs. Junction Gate-to-SourceVoltage (V)- Drain Current (A)IDTC= 125 CTC=25 CTC= - 55 CCrss0601201802403000 102030405060 CissVDS- Drain-to-SourceVoltage (V)C - Capacitance (pF) 50- 250255075100125150TJ-Junction Temperature ( C)(Normalized)- On-ResistanceRDS(on)VGS=10V,ID= ,ID= Number: 69958S-83053-Rev. B, 29-Dec-08 New ProductTYPICAL CHARACTERISTICS 25 C, unless otherwise notedSource-Drain Diode Forward Voltage Threshold 150 C1 VSD-Source-to-DrainVoltage (V)- Source Current (A)ISTJ= 25 50- 250255075100125150ID= 250 A(V)VGS(th)TJ- Temperature ( C)On-Resistance vs.

6 Gate-to-Source Voltage Single Pulse On-Resistance ( )RDS(on)VGS- Gate-to-SourceVoltage (V)TJ= 25 CTJ= 125 CID= 10 2 4 )W( rewoPTime (s)1600 10 6 100 T A = 25 C Single Pulse 8 Safe Operating AreaVDS- Drain-to-SourceVoltage (V)* VGS> minimumVGSatwhich RDS(on)is specified- Drain Current (A) 25 CSingle Pulse1ms10 ms100 ,10sDCBVDSS Limited100100 sLimitedbyRDS(on)*Document Number: 69958S-83053-Rev. B, SiliconixSi2308 BDSNew ProductTYPICAL CHARACTERISTICS 25 C, unless otherwise noted* The power dissipation PD is based on TJ(max.) = 150 C, using junction-to-case thermal resistance, and is more useful in settling the upperdissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the Derating* 255075100125150TC- Case Temperature ( C)ID- Drain Current (A)Power Derating, Case Temperature ( C)Power (W)Power Derating, Temperature ( C)Power (W) Vishay Number: 69958S-83053-Rev.

7 B, 29-Dec-08 New ProductTYPICAL CHARACTERISTICS 25 C, unless otherwise notedVishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for SiliconTechnology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, andreliability data, see Thermal Transient Impedance, Junction-to-Ambient10 -3 10 -2 110600 10 -1 10 -4 100 Pulse Duty Cycle = Wave Pulse Duration (s)t n e i s n a r T e v i t c e f f E d e z i l a m r o N e c n a d e p m I l a m r e h T 1. Duty Cycle, D = 2. Per Unit Base = R thJA = 130 C/W 3. T JM - TA = PDMZthJA(t)t 1 t 2 t 1 t 2 Notes: 4. Surface Mounted P DM Normalized Thermal Transient Impedance, Junction-to-Foot10 -3 10 -2 110 10 -1 10 -4 PulseDuty Cycle = Wave Pulse Duration (s)t n e i s n a r T e v i t c e f f E d e z i l a m r o N e c n a d e p m I l a m r e h T Vishay SiliconixPackage InformationDocument Number: (TO-236): 3-LEADbEE1132 See1DA2AA1 CSeating "CCL1 LqGauge PlaneSeating mmDimMILLIMETERS INCHES Min Max Min Max Refq3 8 3 8 ECN: S-03946-Rev.

8 K, 09-Jul-01 DWG: 5479AN807 Vishay SiliconixDocument Number: LITTLE FOOTR SOT-23 Power MOSFETsWharton McDanielSurface-mounted LITTLE FOOT power MOSFETs use integratedcircuit and small-signal packages which have been been modifiedto provide the heat transfer capabilities required by power materials and design, molding compounds, and dieattach materials have been changed, while the footprint of thepackages remains the Application Note 826, Recommended Minimum PadPatterns With Outline Drawing Access for Vishay SiliconixMOSFETs, ( ), for the basisof the pad design for a LITTLE FOOT SOT-23 power MOSFET footprint . In converting this footprint to the pad set for a powerdevice, designers must make two connections: an electricalconnection and a thermal connection, to draw heat away from electrical connections for the SOT-23 are very simple.

9 Pin 1 isthe gate, pin 2 is the source, and pin 3 is the drain. As in the otherLITTLE FOOT packages, the drain pin serves the additionalfunction of providing the thermal connection from the package tothe PC board. The total cross section of a copper trace connectedto the drain may be adequate to carry the current required for theapplication, but it may be inadequate thermally. Also, heat spreadsin a circular fashion from the heat source. In this case the drain pinis the heat source when looking at heat spread on the PC 1 shows the footprint with copper spreading for the SOT-23package. This pattern shows the starting point for utilizing theboard area available for the heat spreading copper. To create thispattern, a plane of copper overlies the drain pin and providesplanar copper to draw heat from the drain lead and start theprocess of spreading the heat so it can be dissipated into theambient air.

10 This pattern uses all the available area underneath thebody for this With Copper surface-mounted packages are small, and reflow solderingis the most common way in which these are affixed to the PCboard, thermal connections from the planar copper to the padshave not been used. Even if additional planar copper area is used,there should be no problems in the soldering process. The actualsolder connections are defined by the solder mask openings. Bycombining the basic footprint with the copper plane on the drainpins, the solder mask generation occurs final item to keep in mind is the width of the power traces. Theabsolute minimum power trace width must be determined by theamount of current it has to carry. For thermal reasons, thisminimum width should be at least inches. The use of widetraces connected to the drain plane provides a low-impedancepath for heat to move away from the Note 826 Vishay Siliconix Document Number: : 21-Jan-0825 APPLICATION NOTERECOMMENDED MINIMUM PADS FOR ( )Recommended Minimum PadsDimensions in Inches/(mm) ( ) ( ) ( ) ( ) ( ) ( )Return to IndexReturn to IndexLegal Disclaimer Revision: 08-Feb-171 Document Number: 91000 Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.