SiSS71DN - Vishay

1 Siliconix S16-1378-Rev. A, 11-Jul-161 Document Number: 76642 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT 100 V (D-S) MOSFETO rdering Information: SiSS71DN -T1-GE3 (lead (Pb)-free and halogen-free)FEATURES ThunderFET power MOSFET Low thermal resistance PowerPAK package with small size and low mm profile 100 % Rg and UIS tested Material categorization: for definitions of compliance please see Active clamp DC/DC converters POE Load switch Motor drive control Battery managementNotesa.

2 Surface mounted on 1" x 1" FR4 t = 10 See solder profile ( ). The PowerPAK 1212-8S is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder Rework conditions: manual soldering with a soldering iron is not recommended for leadless TC = 25 Surface mounted on 1" x 1" FR4 Maximum under steady state conditions is 63 SUMMARYVDS (V)RDS(on) ( ) (MAX.)ID (A) eQg (TYP.) at VGS = -10 V -2320 at VGS = V 1212-8 STop ViewD8D7D6D51S2S3S4 GSGDP-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted)PARAMETERSYMBOL LIMITUNIT Drain-Source VoltageVDS-100 VGate-Source VoltageVGS 20 Continuous Drain Current (TJ = 150 C)TC = 25 CID-23 ATC = 70 = 25 a, bTA = 70 a, bPulsed Drain Current (t = 100 s)

3 IDM-40 Continuous Source-Drain Diode CurrentTC = 25 CIS-40 eTA = 25 C-4 a, bAvalanche CurrentL = mHIAS-25 Single Pulse Avalanche EnergyEAS31mJMaximum Power DissipationTC = 25 CPD57 WTC = 70 C36TA = 25 a, bTA = 70 C3 a, bOperating Junction and Storage Temperature RangeTJ, Tstg-50 to +150 CSoldering Recommendations (Peak temperature) c, d260 THERMAL RESISTANCE RATINGSPARAMETER SYMBOL TYPICAL MAXIMUM UNIT Maximum Junction-to-Ambient a.

4 Bt 10 sRthJA2126 C/WMaximum Junction-to-Case (Drain)Steady Siliconix S16-1378-Rev. A, 11-Jul-162 Document Number: 76642 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT Pulse test; pulse width 300 s, duty cycle 2 %.b. Guaranteed by design, not subject to production testing. c. Package beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied.

5 Exposure to absolute maximum rating conditions for extended periods may affect device (TJ = 25 C, unless otherwise noted)PARAMETER SYMBOL TEST CONDITIONS MIN. StaticDrain-Source Breakdown VoltageVDSVGS = 0 V, ID = -250 A -100--VVDS Temperature Coefficient VDS/TJID = -250 A --56 -mV/ CVGS(th) Temperature Coefficient VGS(th) -Gate-Source Threshold VoltageVGS(th) VDS = VGS, ID = -250 A LeakageIGSSVDS = 0 V, VGS = 20 V -- 100nAZero Gate Voltage Drain CurrentIDSSVDS = -100 V, VGS = 0 V ---1 AVDS = -5 V, VGS = 0 V, TJ = 55 C ---10On-State Drain Current aID(on) VDS -5 V, VGS = -10 V-5--ADrain-Source On-State Resistance aRDS(on)

6 VGS = -10 V, ID = -5 A VGS = V, ID = -5 A Transconductance agfs VDS = -15 V, ID = -5 A -13-SDynamic bInput CapacitanceCissVDS = -50 V, VGS = 0 V, f = 1 MHz-1050 -pFOutput CapacitanceCoss-330 -Reverse Transfer CapacitanceCrss-20 -Total Gate ChargeQgVDS = -50 V, VGS = -10 V, ID = -10 A-2030nCVDS = -50 V, VGS = V, ID = -10 A-1015 Gate-Source ChargeQgs -Gate-Drain ChargeQgd -Gate ResistanceRgf = 1 Turn-On Delay Timetd(on) VDD = -50 V, RL = 10 ,ID -5 A, VGEN = V, Rg = 1 -3570nsRise Timetr-3060 Turn-Off Delay Timetd(off) -2140 Fall Timetf-1120 Turn-On Delay Timetd(on) VDD = -50 V, RL = 10 ,ID -5 A, VGEN = -10 V, Rg = 1 -1020 Rise Timetr-1840 Turn-Off Delay Timetd(off)

7 -2550 Fall Timetf-1120 Drain-Source Body Diode CharacteristicsContinuous Source-Drain Diode CurrentISTC = 25 C---40 cAPulse Diode Forward Current aISM---40 Body Diode VoltageVSDIF = -5 Diode Reverse Recovery TimetrrIF = -5 A, dI/dt = 100 A/ s, TJ = 25 C-65130nsBody Diode Reverse Recovery ChargeQrr-156312nCReverse Recovery Fall Timeta-37 -nsReverse Recovery Rise Timetb-28 Siliconix S16-1378-Rev. A, 11-Jul-163 Document Number: 76642 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT CHARACTERISTICS (25 C, unless otherwise noted)Output CharacteristicsOn-Resistance vs.

8 Drain Current and Gate VoltageGate ChargeTransfer CharacteristicsCapacitanceOn-Resistance vs. Junction Temperature10100100010000010203040012345 Axis Title1st line2nd line2nd lineID- Drain Current (A)VDS- Drain-to-Source Voltage (V)2nd lineVGS= 10 V to 6 VVGS= 5 VVGS= 3 VVGS= 4 10203040 Axis Title1st line2nd line2nd lineRDS(on)- On-Resistance ( )ID- Drain Current (A)2nd lineVGS= 10 VVGS= V1010010001000002468100510152025 Axis Title1st line2nd line2nd lineVGS- Gate-to-Source Voltage (V)Qg- Total Gate Charge (nC)2nd lineVDS= 50 VVDS= 80 VVDS= 25 VID= 10 A101001000100000102030400123456 Axis Title1st line2nd line2nd lineID- Drain Current (A)VGS- Gate-to-Source Voltage (V)

9 2nd lineTC= 25 CTC=-55 CTC= 125 C101001000100000300600900120015000 20406080100 Axis Title1st line2nd line2nd lineC - Capacitance (pF)VDS- Drain-to-Source Voltage (V)2nd 0 255075100125150 Axis Title1st line2nd line2nd lineRDS(on)- On-Resistance (Normalized)TJ- Junction Temperature ( C)2nd lineID= 5 AVGS= 10 VVGS= Siliconix S16-1378-Rev. A, 11-Jul-164 Document Number: 76642 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT CHARACTERISTICS (25 C, unless otherwise noted)Source-Drain Diode Forward VoltageThreshold VoltageOn-Resistance vs.

10 Gate-to-Source VoltageSingle Pulse Power, Junction-to-AmbientSafe Operating Area, Title1st line2nd line2nd lineIS- Source Current (A)VSD- Source-to-Drain Voltage (V)2nd lineTJ= 150 CTJ= 25 125 150 Axis Title1st line2nd line2nd lineVGS(th)(V)TJ- Temperature ( C)2nd lineID= 250 Title1st line2nd line2nd lineRDS(on)- On-Resistance ( )VGS- Gate-to-Source Voltage (V)2nd lineTJ= 25 CTJ= 125 CID= 5 A0 20 40 60 80 100 (W) Time (s) Title1st line2nd line2nd lineID- Drain Current (A)VDS- Drain-to-Source Voltage (V)(1)VGS> minimum VGSat which RDS(on)is specifiedLimited by RDS(on)(1)TA= 25 CSingle pulse100 ms10 ms1 ms100 s1 s10 sDCIDM limitedID limitedBVDSS Siliconix S16-1378-Rev.