High Speed Infrared Emitting Diode, 940 nm, …

1 Semiconductors Rev. , 30-Jun-161 Document Number: 81933 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT Speed Infrared Emitting Diode, 940 nm, GaAlAs Double HeteroDESCRIPTIONVSMB1940X01 is an Infrared , 940 nm Emitting diode in GaAlAs Double Hetero technology with high radiant power and high Speed , molded in clear, untinted 0805 plastic package for surface mounting (SMD).FEATURES Package type: surface mount Package form: 0805 Dimensions (L x W x H in mm): 2 x x AEC-Q101 qualified Peak wavelength: p = 940 nm High reliability High radiant power High radiant intensity High Speed Angle of half sensitivity: = 60 Low forward voltage Suitable for high pulse current operation 0805 standard surface-mountable package Floor life: 168 h, MSL 3, according to J-STD-020 Lead (Pb)-free reflow soldering Material categorization.

2 For definitions of compliance please see High Speed IR data transmission High power emitter for low space applications High performance transmissive or reflective sensorsNote Test conditions see table Basic Characteristics Note MOQ: minimum order quantity21531 PRODUCT SUMMARYCOMPONENTIe (mW/sr) (deg) p (nm)tr (ns)VSMB1940X016 6094015 ORDERING INFORMATIONORDERING CODEPACKAGINGREMARKSPACKAGE FORMVSMB1940X01 Tape and reelMOQ: 3000 pcs, 3000 pcs/reel0805 ABSOLUTE MAXIMUM RATINGS (Tamb = 25 C, unless otherwise specified)PARAMETERTEST CONDITIONSYMBOLVALUEUNITR everse voltageVR5 VForward currentIF100mAPeak forward currenttp/T = , tp = 100 sIFM200mASurge forward currenttp = 100 sIFSM1 APower dissipationPV160mWJunction temperatureTj100 COperating temperature rangeTamb-40 to +85 CStorage temperature rangeTstg-40 to +100 CSoldering temperatureAccording to Fig.

3 9, J-STD-020 Tsd260 CThermal resistance junction / ambientJESD 51 RthJA270 Semiconductors Rev. , 30-Jun-162 Document Number: 81933 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature21532 Tamb - Ambient Temperature ( C)PV - Power Dissipation (mW)0204060801001201401601800 102030405060708090100 RthJA = 270 K/W21533 Tamb - Ambient Temperature ( C)IF - Forward Current (mA)020406080100120020406080100 RthJA = 270 K/WBASIC CHARACTERISTICS (Tamb = 25 C, unless otherwise specified)

4 PARAMETERTEST voltageIF = 100 mA, tp = 20 = 1 A, tp = 100 VTemperature coefficient of VFIF = 1 = 100 currentVR = 5 VIR--10 AJunction capacitanceVR = 0 V, f = 1 MHz,E = 0 mW/cm2CJ-70-pFRadiant intensityIF = 100 mA, tp = 20 msIe3612mW/srIF = 1 A, tp = 100 sIe-60-mW/srRadiant powerIF = 100 mA, tp = 20 ms e-40-mWTemperature coefficient of radiant powerIF = 1 mATK = 100 mATK of half intensity - 60- degPeak wavelengthIF = 30 mA p-940-nmSpectral bandwidthIF = 30 mA -25-nmTemperature coefficient of pIF = 30 mATK nmRise timeIF = 100 mA, 20 % to 80 %tr-15-nsFall timeIF = 100 mA, 20 % to 80 %tf-15-nsVirtual source Semiconductors Rev.

5 , 30-Jun-163 Document Number: 81933 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT CHARACTERISTICS (Tamb = 25 C, unless otherwise specified)Fig. 3 - Forward Current vs. Forward VoltageFig. 4 - Relative Forward Voltage vs. Ambient TemperatureFig. 5 - Radiant Intensity vs. Forward CurrentFig. 6 - Relative Radiant Intensity vs. Ambient TemperatureFig. 7 - Relative Radiant Power vs. WavelengthFig. 8 - Relative Radiant Intensity vs.

6 Angular Displacement110100100001 23tp = 100 stp/T= - Forward Voltage (V)21534IF - Forward Current (mA)9092949698100102104106108110- 40- 20020406080100 Tamb - Ambient Temperature ( C)VF, rel - Relative Forward Voltage (%)IF = 100 mAIF = 10 mAIF = 1 mA21443tp = 20 - Forward Pulse Current (mA)Ie - Radiant Intensity (mW/sr)tp = 1 s406080100120140160180- 60 - 40 - 20020406080100 Tamb - Ambient Temperature ( C)Ie rel - Relative Radiant Intensity (%)tp = 20 msIF = 1 mA21444IF = 100 mA01020304050607080901008408809209601000 1040 - Wavelength (nm)21445 e rel - Relative Radiant Power (%)IF = 30 , rel - Relative Radiant 30 10 20 40 50 60 70 80 - Angular Semiconductors Rev.

7 , 30-Jun-164 Document Number: 81933 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT SOLDER PROFILEFig. 9 - Lead (Pb)-free Reflow Solder ProfileAccording to J-STD-020 DRYPACKD evices are packed in moisture barrier bags (MBB) to prevent the products from moisture absorption during transportation and storage. Each bag contains a LIFETime between soldering and removing from MBB must not exceed the time indicated in J-STD-020:Moisture sensitivity: level 3 Floor life: 168 hConditions: Tamb < 30 C, RH < 60 %DRYINGIn case of moisture absorption devices should be baked before soldering.

8 Conditions see J-STD-020 or label. Devices taped on reel dry using recommended conditions 192 h at 40 C (+ 5 C), RH < 5 %.PACKAGE DIMENSIONS in millimeters05010015020025030005010015020 0250300 Time (s)Temperature ( C)240 C245 Cmax. 260 Cmax. 120 smax. 100 s217 Cmax. 30 smax. ramp up 3 C/smax. ramp down 6 C/s19841255 Semiconductors Rev. , 30-Jun-165 Document Number: 81933 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT TAPE DIMENSIONS in Semiconductors Rev.

9 , 30-Jun-166 Document Number: 81933 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT DIMENSIONS in millimetersof the wheel is supplier of the leave openIssue: 2; : to DINtechnical drawings max. 55 + + max. 13+ min. 2:120875 Legal Disclaimer Revision: 01-Jan-20191 Document Number: 91000 Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

10 vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability.