High Voltage Trench MOS Barrier Schottky Rectifier

1 V30100S-E3, VF30100S-E3, VB30100S-E3, General Semiconductor Revision: 18-Jun-20181 Document Number: 88941 For technical questions within your region: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = V at IF = 5 ADESIGN SUPPORT TOOLSFEATURES Trench MOS Schottky technology Low forward Voltage drop, low power losses High efficiency operation Low thermal resistance Meets MSL level 1, per J-STD-020, LF maximum peak of 245 C (for TO-263AB package) Solder bath temperature 275 C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, and TO-262AA package) Material categorization: for definitions of compliance please see APPLICATIONSFor use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters and reverse battery DATACase.

2 TO-220AB, ITO-220AB, D2 PAK (TO-263AB), and TO-262AA Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial gradeTerminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker testPolarity: as marked Mounting Torque: 10 in-lbs maximum PRIMARY CHARACTERISTICSIF(AV)30 AVRRM100 VIFSM250 AVF at IF = 30 VTJ CPackageTO-220AB, ITO-220AB, D2 PAK (TO-263AB),TO-262 AACircuit configurationSingleV30100 SVF30100 SVI30100 SVB30100 STO-220 ABTO-262 AATMBS ITO-220AB213 PIN 1 PIN 2 PIN 3K1K23 NCAKHEATSINKNCAKPIN 1 PIN 2 PIN 3 PIN 1 PIN 2 CASEPIN 3123D2 PAK (TO-263AB)click logo to get startedAvailableModelsMAXIMUM RATINGS (TA = 25 C unless otherwise noted)PARAMETERSYMBOLV30100 SVF30100 SVB30100 SVI30100 SUNITM aximum repetitive peak reverse voltageVRRM100 VMaximum average forward rectified current (fig.)

3 1)IF(AV)30 APeak forward surge current ms single half sine-wave superimposed on rated loadIFSM250 ANon-repetitive avalanche energy at TJ = 25 C, L = 90 mHEAS230mJPeak repetitive reverse current at tp = 2 s, 1 kHz, TJ = 38 C 2 rate of change (rated VR)dV/dt10 000V/ sIsolation Voltage (ITO-220AB only) from terminal to heatsink t = 1 minVAC1500 VOperating junction and storage temperature rangeTJ, TSTG-40 to +150 CV30100S-E3, VF30100S-E3, VB30100S-E3, General Semiconductor Revision: 18-Jun-20182 Document Number: 88941 For technical questions within your region: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT (1)Pulse test: 300 s pulse width, 1 % duty cycle(2)Pulse test: Pulse width 40 msRATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted)Fig.

4 1 - Forward Current Derating CurveFig. 2 - Forward Power Loss CharacteristicsELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted)PARAMETERTEST voltageIR = 10 mATA = 25 CVBR105 (minimum)-VInstantaneous forward voltageIF = 5 ATA = 25 CVF (1) = 10 = 30 = 5 ATA = 125 = 10 = 30 currentVR = 70 VTA = 25 CIR (2)27- ATA = 125 C11-mAVR = 100 VTA = 25 C701000 ATA = 125 C2345mATHERMAL CHARACTERISTICS (TA = 25 C unless otherwise noted)PARAMETER SYMBOL V30100 SVF30100 SVB30100 SVI30100 SUNIT Typical thermal resistanceR C/W ORDERING INFORMATION (Example)PACKAGEPREFERRED P/NUNIT WEIGHT (g)PACKAGE CODEBASE QUANTITYDELIVERY MODETO-220 ABV30100S-E3 and reelTO-262 AAVI30100S-E3 Forward Current (A)Case Temperature ( C)

5 Mounted on Specific HeatsinkVF30100SV(B,I)30100 SResistive or Inductive Load0481216202428320 4 8 12162024283236 Average Forward Current (A)Average Power Loss (W)D = tp/TtpTD = = = = = = , VF30100S-E3, VB30100S-E3, General Semiconductor Revision: 18-Jun-20183 Document Number: 88941 For technical questions within your region: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT 3 - Typical Instantaneous Forward CharacteristicsFig. 4 - Typical Reverse CharacteristicsFig. 5 - Typical Junction CapacitanceFig. 6 - Typical Transient Thermal ImpedanceFig. 7 - Typical Transient Thermal Impedance Forward Voltage (V)TA = 150 CTA = 125 CTA = 25 CInstantaneous Forward Current (A) of Rated Peak Reverse Voltage (%)Instantaneous Reverse Current (mA)TA = 150 CTA = 125 CTA = 25 C100100010 Voltage (V)Junction Capacitance (pF) - Pulse Duration (s)Tr a nsient Thermal Impedance ( C/W)Junction to CaseV(B,I) - Pulse Duration (s)Junction to CaseVF30100 STr a nsient Thermal Impedance ( C/W)V30100S-E3, VF30100S-E3, VB30100S-E3, General Semiconductor Revision: 18-Jun-20184 Document Number: 88941 For technical questions within your region: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE.

6 THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT OUTLINE DIMENSIONS in inches (millimeters) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( )V30100S-E3, VF30100S-E3, VB30100S-E3, General Semiconductor Revision: 18-Jun-20185 Document Number: 88941 For technical questions within your region: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( )D2 PAK (TO-263AB) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( )0 to (0 to ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) Pad LayoutLegal Disclaimer Revision: 01-Jan-20191 Document Number: 91000 Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

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