P-Channel 80 V (D-S) MOSFET

1 vishay SiliconixSUM110P08-11 LDocument Number: 73471S12-3071-Rev. C, document is subject to change without PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT technical questions, contact: 80 V (D-S) MOSFETFEATURES TrenchFET Power MOSFET Material categorization:For definitions of compliance please : a. Package Surface mounted on 1" x 1" FR4 t = 10 Maximum under steady state conditions is 40 C/W. PRODUCT SUMMARY VDS (V)RDS(on) ( )ID (A)bQg (Typ)- at VGS = - 10 V - 11085 at VGS = - V - 109TO-263 SGDTop ViewDrain Connected to TabOrdering Information:SUM110P08-11L-E3 (Lead (Pb)-free)SGDP-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted)Parameter Symbol LimitUnit Drain-Source Voltage VDS- 80 VGate-Source Voltage VGS 20 Continuous Drain Current (TJ = 175 C)

2 TC = 25 CID- 110aATC = 125 C- 71TA = 25 C- , cTA = 125 C- , cPulsed Drain CurrentIDM- 120 Continuous Source-Drain Diode CurrentTC = 25 CIS- 110TA = 25 C- 9b, cAvalanche CurrentL = mHIAS- 75 Single-Pulse Avalanche EnergyEAS281mJMaximum Power DissipationTC = 25 CPD375 WTC = 125 C125TA = 25 , cTA = 125 , cOperating Junction and Storage Temperature Range TJ, Tstg- 55 to 175 CTHERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit Maximum Junction-to-Ambientb, dt 10 sRthJA811 C/WMaximum Junction-to-Case (Drain)Steady SiliconixSUM110P08-11 LNew Number: 73471S12-3071-Rev.

3 C, 24-Dec-12 This document is subject to change without PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT technical questions, contact: Pulse test; pulse width 300 s, duty cycle 2 %.b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operationof the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximumrating conditions for extended periods may affect device (TA = 25 C, unless otherwise noted)Parameter Symbol Test Conditions StaticDrain-Source Breakdown VoltageVDSVGS = 0 V, ID = - 250 A - 80 VVDS Temperature Coefficient VDS/TJ ID = - 1 A - 85mV/ CVGS(th) Temperature Coefficient VGS(th)/TJ - Threshold VoltageVGS(th) VDS = VGS, ID = - 250 A - 1- 3 VGate-Source LeakageIGSSVDS = 0 V, VGS = 20 V 100nAZero Gate Voltage Drain CurrentIDSSVDS = - 80 V, VGS = 0 V - 1 AVDS = - 80 V, VGS = 0 V, TJ = 175 C - 500On-State Drain CurrentaID(on)

4 VDS 10 V, VGS = - 10 V - 120 ADrain-Source On-State ResistanceaRDS(on) VGS = - 10 V, ID = - 20 A VGS = - V, ID = - 15 A Transconductanceagfs VDS = - 15 V, ID = - 20 A 85 SDynamicbInput CapacitanceCissVDS = - 40 V, VGS = 0 V, f = 1 MHz 10850pFOutput CapacitanceCoss800 Reverse Transfer CapacitanceCrss 700 Total Gate ChargeQgVDS = - 40 V, VGS = - 10 V, ID = - 110 A 180270nCVDS = - 40 V, VGS = - V, ID = - 110 A 85130 Gate-Source ChargeQgs 35 Gate-Drain ChargeQgd 42 Gate ResistanceRgf = 1 Tu r n - O n D e l a y T i m etd(on) VDD = - 40 V, RL = ID - 110 A, VGEN = - 10 V, Rg = 1 2030nsRise Timetr330500 Turn-Off Delay Timetd(off) 135205 Fall Timetf550825 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode CurrentISTC = 25 C - 110 APulse Diode Forward CurrentaISM- 120 Body Diode VoltageVSDIS = - 20 A- Diode Reverse Recovery TimetrrIF = - 20 A, di/dt = 100 A/ s, TJ = 25 C 65100nsBody Diode Reverse Recovery ChargeQrr135205nCReverse Recovery Fall Timeta43nsReverse Recovery Rise Timetb22 vishay SiliconixSUM110P08-11 LNew ProductDocument Number: 73471S12-3071-Rev.

5 C, document is subject to change without PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT technical questions, contact: CHARACTERISTICS (25 C, unless otherwise noted)Output CharacteristicsOn-Resistance vs. Drain CurrentGate Charge040801201602000 1 2 VGS = 10 V thru 6 VVDS - (V)4 VID - (A)5 V0 20406080100120 VGS = 10 VID - (A)VGS = VRDS - on (W) - (nC)VDS = 64 VVDS = 40 VVGS - (V)Transfer CharacteristicsCapacitanceOn-Resistance vs. Junction Temperature- 55 C0102030400123425 CVGS - (V)ID - (A)TC = 125 C03000600090001200015000020406080 CossCissVDS - (V)CAP - (pF) 50 - 250255075100 125 150 175 VGS = 10 VTJ - ( C)rDS(on) - (normalized)ID = 20 AVishay SiliconixSUM110P08-11 LNew Number: 73471S12-3071-Rev. C, 24-Dec-12 This document is subject to change without PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT technical questions, contact: CHARACTERISTICS (25 C, unless otherwise noted)Source-Drain Diode Forward VoltageThreshold VoltagePower Derating, = 150 CVSD - (V)100101IS - (A)25 C- 50 - 250255075100 125 150 175ID = 1mATJ - ( C)VGS(th) Variance (V)TCPower (W)0501001502002503003504002550751001251 50175On-Resistance vs.

6 Gate-to-Source VoltageSingle Pulse Power, Junction-to-Case (TC = 25 C)Safe Operating - (V)25 C150 CRDS - on (W)ID = 20 ATime (s) (W)0100020003000400050006000 VDS - Drain-to-Source Voltage (V)* VGS > minimum VGS at which rDS(on) is ms100 ms, DC100 s 10 s 10 msID (A) PulseTc = 25 CLimited by rDS(on)* vishay SiliconixSUM110P08-11 LNew ProductDocument Number: 73471S12-3071-Rev. C, document is subject to change without PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT technical questions, contact: CHARACTERISTICS (25 C, unless otherwise noted) vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for SiliconTechnology and Package Reliability represent a composite of all qualified locations.

7 For related documents such as package/tape drawings, part marking, andreliability data, see Avalanche and Drain Current vs. Case Temperature03060901200255075100125150175 ID - (A)TC - ( C)Package LimitedAvalanche Current vs. Timetin - (s)IDav - (A) Thermal Transient Impedance, Effective Transient Thermal Package Siliconix Revison: 30-Sep-131 Document Number: 71198 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT (D2 PAK): 3-LEADN otes1. Plane B includes maximum features of heat sink tab and No more than 25 % of L1 can fall above seating plane bymax. 8 Pin-to-pin coplanarity max. 4 *: Thin lead is for SUB, SYB. Thick lead is for SUM, SYM, Use inches as the primary This feature is for thick A M A M2 PLDETAIL A (ROTATED 90 )SECTION A-A0 - 5 L1L4 *Thin : T13-0707-Rev.

8 K, 30-Sep-13 DWG: 5843AN826 vishay SiliconixDocument Number: MINIMUM PADS FOR D2 PAK: ( )Recommended Minimum PadsDimensions in Inches/(mm) ( ) ( ) ( ) ( ) ( ) ( )Return to IndexLegal Disclaimer Revision: 08-Feb-171 Document Number: 91000 Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product.

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