P-Channel 100-V (D-S) 175 °C MOSFET

1 vishay SiliconixSUD50P10-43 LDocument Number: 73444S09-1398-Rev. C, 100-V (D-S) 175 C MOSFETFEATURES TrenchFET Power MOSFET Compliant to RoHS Directive 2002/95/ECNotes: a. Package Surface Mounted on 1" x 1" FR4 t = 10 Maximum under Steady State conditions is 40 SUMMARY VDS (V)RDS(on) ( )ID (A)aQg (Typ.)- at VGS = - 10 V - 3754 at VGS = - V - 35TO-252 SGDTo p V i e wDrain Connected to TabSGDP- channel MOSFETO rdering Information: SUD50P10-43L-E3 (Lead (Pb)-free)ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise notedParameter Symbol LimitUnit Drain-Source Voltage VDS- 100 VGate-Source Voltage VGS 20 Continuous Drain Current (TJ = 175 C)bTC = 25 CID- = 125 C- 31aTA = 25 C- , cTA = 125 C- , cPulsed Drain CurrentIDM- 40 Continuous Source Current (Diode Conduction)

2 TC = 25 CIS- 50aTA = 25 C- , cAvalanche CurrentL = mHIAS- 35 Single Pulse Avalanche EnergyEAS61mJMaximum Power DissipationTC = 25 CPD136 WTC = 70 C95TA = 25 , cTA = 70 , cOperating Junction and Storage Temperature Range TJ, Tstg- 55 to 175 CTHERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit Junction-to-Ambientat 10 sRthJA1518 C/WSteady State4050 Junction-to-Case (Drain) Number: 73444S09-1398-Rev. C, 20-Jul-09 vishay SiliconixSUD50P10-43 LNotes:a. Pulse test; pulse width 300 s, duty cycle 2 %.b. Guaranteed by design, not subject to production testing.

3 Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operationof the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximumrating conditions for extended periods may affect device TJ = 25 C, unless otherwise notedParameter Symbol Test Conditions StaticDrain-Source Breakdown VoltageVDSVGS = 0 V, ID = - 250 A - 100 VVDS Temperature Coefficient VDS/TJ ID = - 250 A - 109mV/ CVGS(th)

4 Temperature Coefficient VGS(th)/TJ Threshold VoltageVGS(th) VDS = VGS, ID = - 250 A - 1- 3 VGate-Source LeakageIGSSVDS = 0 V, VGS = 20 V 100nAZero Gate Voltage Drain CurrentIDSSVDS = - 100 V, VGS = 0 V - 1 AVDS = - 100 V, VGS = 0 V, TJ = 55 C - 10On-State Drain CurrentaID(on) VDS 5 V, VGS = - 10 V - 40 ADrain-Source On-State ResistanceaRDS(on) VGS = - 10 V, ID = - A VGS = - V, ID = - A Transconductanceagfs VDS = - 15 V, ID = - A 38 SDynamicbInput CapacitanceCissVDS = - 50 V, VGS = 0 V, f = 1 MHz 4600pFOutput CapacitanceCoss230 Reverse Transfer CapacitanceCrss 175 Total Gate ChargeQgVDS = - 50 V, VGS = - 10 V, ID = - A 106160nCVDS = - 50 V, VGS = - V, ID = - A 5481 Gate-Source ChargeQgs 14 Gate-Drain ChargeQgd 26 Gate ResistanceRgf = 1 MHz4 Tu r n - O n D e l a y T i m etd(on) VDD = - 50 V, RL = ID - A, VGEN = - 10 V, Rg = 1 1525nsRise Timetr2030 Turn-Off Delay Timetd(off)

5 110165 Fall Timetf100150Tu r n - O n D e l a y T i m etd(on) VDD = - 50 V, RL = ID - A, VGEN = - V, Rg = 1 4265nsRise Timetr160240 Turn-Off Delay Timetd(off) 100150 Fall Timetf100150 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode CurrentISTC = 25 C - 50 APulse Diode Forward CurrentaISM- 40 Body Diode VoltageVSDIS = - A- Diode Reverse Recovery TimetrrIF = - A, dI/dt = 100 A/ s, TJ = 25 C 6090nsBody Diode Reverse Recovery ChargeQrr150225nCReverse Recovery Fall Timeta46nsReverse Recovery Rise Timetb14 Document Number: 73444S09-1398-Rev.

6 C, SiliconixSUD50P10-43 LTYPICAL CHARACTERISTICS 25 C, unless otherwise noted Output CharacteristicsOn-Resistance vs. Drain Current and Gate VoltageGate = 10 V thru 4 V3 VVDS - Drain-to-Source Voltage (V)- Drain Current (A)ID2 = 10 VID - Drain Current (A)VGS = VRDS(on)- On-Resistance ( )02468100 20406080100120ID = A- Gate-to-Source Voltage (V)Qg - Total Gate Charge (nC)VGSVDS = 80 VVDS = 50 VTransfer CharacteristicsCapacitanceOn-Resistance vs. Junction = 125 C- 55 C VGS - Gate-to-Source Voltage (V)- Drain Current (A)ID25 C010002000300040005000600070000 1020304050607080 CossCissVDS - Drain-to-Source Voltage (V)C - Capacitance (pF) 50- 250255075100125150 VGS = 10 V, VTJ- Junction Temperature ( C)RDS(on) - On-Resistance(Normalized)ID = Number: 73444S09-1398-Rev.

7 C, 20-Jul-09 vishay SiliconixSUD50P10-43 LTYPICAL CHARACTERISTICS 25 C, unless otherwise noted Source-Drain Diode Forward VoltageThreshold = 25 CTJ = 150 CVSD - Source-to-Drain Voltage (V)- Source Current (A) 50 - 250255075100 125 150 175ID = 250 ATJ - Temperature ( C)VGS(th) (V)On-Resistance vs. Gate-to-Source VoltageSingle Pulse Power, - Gate-to-Source Voltage (V)RDS(on)- Drain-to-Source On-Resistance ( )TA= 25 CTA = 125 C02035510 Power (W)Time (s) Operating Area, ms10 msTA= 25 CSingle Pulse100 sDCBVDSS Limited10 s1sVDS- Drain-to-SourceVoltage (V)*VGS> minimumVGSatwhich RDS(on)is specified- Drain Current (A)IDLimitedbyRDS(on)* vishay SiliconixSUD50P10-43 LDocument Number: 73444S09-1398-Rev.

8 C, CHARACTERISTICS 25 C, unless otherwise noted * The power dissipation PD is based on TJ(max) = 175 C, using junction-to-case thermal resistance, and is more useful in settling the upperdissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the Derating*Single Pulse Avalance Capability010203040500255075100125150175 ID - Drain Current (A)TC - Case Temperature ( C) - Time In Avalanche (s)IC - Peak Avalanche Current (A)TALIABV Pulse Power, Junction-to-Ambient020406080100120140255 075100125150175TC - Case Temperature ( C) Number: 73444S09-1398-Rev.

9 C, 20-Jul-09 vishay SiliconixSUD50P10-43 LTYPICAL CHARACTERISTICS 25 C, unless otherwise noted vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for SiliconTechnology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, andreliability data, see Thermal Transient Impedance, PulseDuty Cycle = Wave Pulse Duration (s)Normalized Effective TransientThermal Impedance1.

10 Duty Cycle, D =2. Per Unit Base = RthJA = 65 C/W3. TJM - TA = PDMZthJA(t)t1t2t1t2 Notes:4. Surface MountedPDMN ormalized Thermal Transient Impedance, Cycle = Wave Pulse Duration (s)Normalized Effective TransientThermal PulsePackage Siliconix Revision: 16-Dec-20191 Document Number: 71197 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT Case OutlineVERSION 1: FACILITY CODE = YNote Dimension L3 is for reference plane height ( mm)eb3EC2 ALHP ackage Siliconix Revision: 16-Dec-20192 Document Number: 71197 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE.