N-Channel 60 V (D-S), 175 °C MOSFET, Logic Level

1 vishay SiliconixSUD23N06-31 LDocument Number: 72145S-71660-Rev. C, 60 V (D-S), 175 C MOSFET, Logic LevelFEATURES TrenchFET Power MOSFET 175 C Junction TemperaturePRODUCT SUMMARY VDS (V)rDS(on) ( )ID (A) at VGS = 10 V at VGS = V ViewDrain Connected to TabOrdering Information: SUD23N06-31L SUD23N06-31L-E3 (Lead (Pb)-free) N-Channel MOSFETGDSN otes: a. Surface Mounted on 1" x 1" FR4 board, t 10 sec.* Pb containing terminations are not RoHS compliant, exemptions may apply. ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise notedParameter Symbol LimitUnit Gate-Source Voltage VGS 20 VContinuous Drain Current (TJ = 175 C)bTC = 25 CID23 ATC = 100 Drain CurrentIDM50 Continuous Source Current (Diode Conduction)IS23 Avalanche CurrentIAS20 Single Avalanche Energy (Duty Cycle 1 %)L = mHEAS20mJMaximum Power DissipationTC = 25 CPD100 WTA = 25 C3aOperating Junction and Storage Temperature Range TJ, Tstg- 55 to 175 CTHERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit Maximum Junction-to-Ambientat 10 secRthJA1822 C/WSteady State4050 Maximum * Number: 72145S-71660-Rev.

2 C, 06-Aug-07 vishay SiliconixSUD23N06-31 LNotes:a. For design aid only; not subject to production testing. b. Pulse test; pulse width 300 s, duty cycle 2 %.c. Independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operationof the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximumrating conditions for extended periods may affect device TJ = 25 C, unless otherwise notedParameter Symbol Test Conditions Min Typa MaxUnit StaticDrain-Source Breakdown VoltageV(BR)DSSVGS = 0 V, ID = 250 A 60 VGate Threshold VoltageVGS(th)

3 VDS = VGS, ID = 250 A LeakageIGSSVDS = 0 V, VGS = 20 V 100nAZero Gate Voltage Drain CurrentIDSSVDS = 60 V, VGS = 0 V 1 AVDS = 60 V, VGS = 0 V, TJ = 125 C 50 VDS = 60 V, VGS = 0 V, TJ = 175 C 250On-State Drain CurrentbID(on) VDS = 5 V, VGS = 10 V 50 ADrain-Source On-State ResistancebrDS(on) VGS = 10 V, ID = 15 A VGS = 10 V, ID = 15 A, TJ = 125 = 10 V, ID = 15 A, TJ = 175 = V, ID = 10 Transconductancebgfs VDS = 15 V, ID = 15 A 20 SDynamicaInput CapacitanceCissVGS = 0 V, VDS = 25 V, f = 1 MHz 670pFOutput CapacitanceCoss140 Reverse Transfer CapacitanceCrss 60 Total Gate ChargecQgVDS = 30 V, VGS = 10 V, ID = 23 A 1117nCGate-Source ChargecQgs 3 Gate-Drain ChargecQgd 3Tu r n - O n D e l a y T i m ectd(on) VDD = 30 V, RL = ID 23 A, VGEN = 10 V, Rg = 815nsRise Timectr1525 Turn-Off Delay Timectd(off) 3045 Fall Timectf2540 Source-Drain Diode Ratings and Characteristics (TC = 25 C)

4 Pulsed CurrentISM50 ADiode Forward VoltageVSDIF = 15 A, VGS = 0 Recovery TimetrrIF = 15 A, di/dt = 100 A/ s 3060nsDocument Number: 72145S-71660-Rev. C, SiliconixSUD23N06-31 LTYPICAL CHARACTERISTICS 25 C unless notedOutput CharacteristicsTransconductanceCapacitan ce010203040500246810 VDS - Drain-to-Source Voltage (V)- Drain Current (A)IDVGS = 10 thru 6 V4 V5 V3 V081624320510152025- Transconductance (S)gfsTC = - 55 C25 C125 CID - Drain Current (A)020040060080010000 102030405060 VDS - Drain-to-Source Voltage (V)C - Capacitance (pF)CrssCissCossTransfer CharacteristicsOn-Resistance vs. Drain CurrentGate Charge010203040500123456 VGS - Gate-to-Source Voltage (V)- Drain Current (A)ID25 C- 55 CTC = 125 1020304050- On-Resistance ( )ID - Drain Current (A)rDS(on)VGS = VVGS = 10 V0246810024681012- Gate-to-Source Voltage (V)Qg - Total Gate Charge (nC)VGSVDS = 30 VID = 23 Number: 72145S-71660-Rev.

5 C, 06-Aug-07 vishay SiliconixSUD23N06-31 LTYPICAL CHARACTERISTICS 25 C unless notedOn-Resistance vs. Junction Temperaturer DS ( on) - On-Resistance (Normalized) - 50 - 250255075100 125 150 175T J - Junction T emperature ( C)V GS = 10 V I D = 15 A Source-Drain Diode Forward Voltage- Source Current (A)ISVSD - Source-to-Drain Voltage (V) = 25 CTJ = 150 C0 Document Number: 72145S-71660-Rev. C, SiliconixSUD23N06-31 LTHERMAL RATINGS vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech-nology and Package Reliability represent a composite of all qualified locations.

6 For related documents such as package/tape drawings, part marking, and reliabilitydata, see Drain Current vs. Ambient Temperature05101520250255075100125150175 TA - Ambient Temperature ( C)- Drain Current (A)IDSafe Operating AreaVDS - Drain-to-Source Voltage (V)*VGS > minimum VGS at which rDS(on) is specified- Drain Current (A) = 25 CSingle Pulse1 ms10 ms100 msdc*rDS(on)Limited10 s100 sNormalized Thermal Transient Impedance, Junction-to-CaseSquare Wave Pulse Duration (sec) Effective TransientThermal PulseDuty Cycle = Document Number: : 18-Jul-081 DisclaimerLegal Disclaimer NoticeVishayAll product specifications and data are subject to change without notice. vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf(collectively, vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained hereinor in any other disclosure relating to any product.

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