P-Channel 40 V (D-S) MOSFET

1 sis443dn . vishay Siliconix P-Channel 40 V (D-S) MOSFET . FEATURES. PRODUCT SUMMARY TrenchFET Power MOSFET . VDS (V) RDS(on) ( ) Max. ID (A) Qg (Typ.) 100% Rg and UIS Tested Material categorization: at VGS = - 10 V - 35d - 40 nC For definitions of compliance please see at VGS = - V - 35d PowerPAK 1212-8 APPLICATIONS. Notebook Computers and Mobile S. S. mm 1. mm Computing S. 2 - Adaptor Switch S. 3. G. - Load Switch 4 - DC/DC Converter G. D. 8. - Power Management D. 7. D. 6. D. 5. Bottom View D. Ordering Information: sis443dn -T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET . ABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted). Parameter Symbol Limit Unit Drain-Source Voltage VDS - 40. V. Gate-Source Voltage VGS 20.

2 TC = 25 C - 35d TC = 70 C - 35d Continuous Drain Current (TJ = 150 C) ID. TA = 25 C - , b TA = 70 C - , b A. Pulsed Drain Current (t = 300 s) IDM - 80. TC = 25 C - 35d Continuous Source-Drain Diode Current IS. TA = 25 C - 3a, b Avalanche Current IAS - 20. L = mH. Single-Pulse Avalanche Energy EAS 20 mJ. TC = 25 C 52. TC = 70 C 33. Maximum Power Dissipation PD W. TA = 25 C , b TA = 70 C , b Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150. C. Soldering Recommendations (Peak Temperature)e, f 260. THERMAL RESISTANCE RATINGS. Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambienta, c t 10 s RthJA 26 33. C/W. Maximum Junction-to-Case Steady State RthJC Notes: a. Surface mounted on 1" x 1" FR4 board.

3 B. t = 10 s. c. Maximum under steady state conditions is 81 C/W. d. Package limited. e. See solder profile ( ). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. f. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 63253 For technical questions, contact: S13-1708-Rev. C, 05-Aug-13 1. This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT sis443dn .

4 vishay Siliconix SPECIFICATIONS (TJ = 25 C, unless otherwise noted). Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 A - 40 V. VDS Temperature Coefficient VDS/TJ - 34. ID = - 250 A mV/ C. VGS(th) Temperature Coefficient VGS(th)/TJ 5. Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 A -1 - V. Gate-Source Leakage IGSS VDS = 0 V, VGS = 20 V 100 nA. VDS = - 40 V, VGS = 0 V -1. Zero Gate Voltage Drain Current IDSS A. VDS = - 40 V, VGS = 0 V, TJ = 55 C -5. On-State Drain Currenta ID(on) VDS - 10 V, VGS = - 10 V - 30 A. VGS = - 10 V, ID = - 15 A Drain-Source On-State Resistancea RDS(on) . VGS = - V, ID = - 10 A Forward Transconductancea gfs VDS = - 10 V, ID = - 15 A 50 S.

5 Dynamicb Input Capacitance Ciss 4370. Output Capacitance Coss VDS = - 20 V, VGS = 0 V, f = 1 MHz 300 pF. Reverse Transfer Capacitance Crss 285. VDS = - 20 V, VGS = - 10 V, ID = - 10 A 90 135. Total Gate Charge Qg 63. nC. Gate-Source Charge Qgs VDS = - 20 V, VGS = - V, ID = - 10 A Gate-Drain Charge Qgd Gate Resistance Rg f = 1 MHz . Turn-On Delay Time td(on) 12 24. Rise Time tr VDD = - 20 V, RL = 2 10 20. Turn-Off DelayTime td(off) ID - 10 A, VGEN = - 10 V, Rg = 1 48 95. Fall Time tf 10 20. ns Turn-On Delay Time td(on) 45 90. Rise Time tr VDD = - 20 V, RL = 2 40 80. Turn-Off DelayTime td(off) ID - 10 A, VGEN = - V, Rg = 1 50 100. Fall Time tf 12 24. Drain-Source Body Diode Characteristics Continous Source-Drain Diode Current IS TC = 25 C - 35.

6 A. Pulse Diode Forward Current ISM - 80. Body Diode Voltage VSD IS = - 3 A, VGS = 0 V - - V. Body Diode Reverse Recovery Time trr 19 38 ns Body Diode Reverse Recovery Charge Qrr 10 20 nC. IF = - 10 A, dI/dt = 100 A/ s, TJ = 25 C. Reverse Recovery Fall Time ta 10. ns Reverse Recovery Rise Time tb 10. Notes: a. Pulse test; pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

7 For technical questions, contact: Document Number: 63253. 2 S13-1708-Rev. C, 05-Aug-13. This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT sis443dn . vishay Siliconix TYPICAL CHARACTERISTICS (25 C, unless otherwise noted). 100 100. VGS = 10 V thru 4 V. 80 80. ID - Drain Current (A). ID - Drain Current (A). 60 60. 40 TC = 25 C. 40. VGS = 3 V. 20. 20. TC = 125 C. VGS = 2 V. 0 TC = - 55 C. 0. VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V). Output Characteristics Transfer Characteristics 6000. Ciss 4800. RDS(on) - On-Resistance ( ). C - Capacitance (pF). VGS = V. 3600. 2400. VGS = 10 V 1200. Coss Crss 0 16 32 48 64 80 0.

8 0 4 8 12 16 20. ID - Drain Current (A). VDS - Drain-to-Source Voltage (V). On-Resistance vs. Drain Current Capacitance 10 ID = 10 A VGS = 10 V. ID = 10 A. RDS(on) - On-Resistance (Normalized). VGS - Gate-to-Source Voltage (V). 8 VDS = 10 V. 6. VDS = 20 V. VGS = V. VDS = 30 V. 4. 2. 0 0 20 40 60 80 100 - 50 - 25 0 25 50 75 100 125 150. Qg - Total Gate Charge (nC) TJ - Junction Temperature ( C). Gate Charge On-Resistance vs. Junction Temperature Document Number: 63253 For technical questions, contact: S13-1708-Rev. C, 05-Aug-13 3. This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT sis443dn . vishay Siliconix TYPICAL CHARACTERISTICS (25 C, unless otherwise noted).

9 100 10 ID = 10 A. TJ = 150 C. RDS(on) - On-Resistance ( ). IS - Source Current (A). TJ = 25 C. 1 TJ = 125 C. TJ = 25 C. 0 2 4 6 8 10. VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V). Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage - 100. - 80. - ID = 250 A. 60. Power (W). VGS(th) (V). - ID = 1 mA 40. - 20. - - 0. - 50 - 25 0 25 50 75 100 125 150 1 10. TJ - Temperature ( C) Time (s). Threshold Voltage Single Pulse Power, Junction-to-Ambient 100. IDM Limited 100 s 10 ID Limited ID - Drain Current (A). 1 ms 10 ms 1 Limited by RDS(on)*. 100 ms 1s 10 s TC = 25 C. Single Pulse DC. BVDSS Limited 1 10 100. VDS - Drain-to-Source Voltage (V). * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area For technical questions, contact: Document Number: 63253.

10 4 S13-1708-Rev. C, 05-Aug-13. This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT sis443dn . vishay Siliconix MOSFET TYPICAL CHARACTERISTICS (25 C, unless otherwise noted). 55. 44. ID - Drain Current (A). 33. Limited by Package 22. 11. 0. 0 25 50 75 100 125 150. TC - Case Temperature ( C). Current Derating*. 65 52 Power (W). 39 Power (W). 26 13 0 0 25 50 75 100 125 150 0 25 50 75 100 125 150. TC - Case Temperature ( C) TA - Ambient Temperature ( C). Power, Junction-to-Case Power, Junction-to-Ambient * The power dissipation PD is based on TJ(max.) = 150 C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used.