N-Channel 30 V (D-S) MOSFET

1 Siliconix S10-0111-Rev. A, 18-Jan-101 Document Number: 65701 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT 30 V (D-S) MOSFETM arking code: P2 FEATURES TrenchFET power MOSFET 100 % Rg tested Material categorization: for definitions of compliance please see DC/DC converter for portable devices Load switchNotesa. Package limitedb. Surface mounted on 1" x 1" FR4 boardc. t = 5 sd. Maximum under steady state conditions is 130 C/WPRODUCT SUMMARYVDS (V)30 RDS(on) max. ( ) at VGS = V (on) max. ( ) at VGS = V typ. (nC)3ID (A) ViewSOT-23 (TO-236)1G2SD3N-Channel MOSFETGDSORDERING INFORMATIONP ackageSOT-23 Lead (Pb)-free and halogen-freeSi2300DS-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted)PARAMETER SYMBOL LIMIT UNIT Drain-source voltage VDS30 VGate-source voltage VGS 12 Continuous drain current (TJ = 150 C)

2 TC = 25 aATC = 70 C3TA = 25 b, cTA = 70 b, cPulsed drain currentIDM15 Continuous source-drain diode current TC = 25 = 25 b, cMaximum power dissipationTC = 25 = 70 = 25 b, cTA = 70 b, cOperating junction and storage temperature rangeTJ, Tstg -55 to +150 CSoldering recommendations (peak temperature) d, e 260 THERMAL RESISTANCE RATINGSPARAMETER SYMBOL TYPICALMAXIMUMUNIT Maximum junction-to-ambient b, dt 5 sRthJA90115 C/WMaximum junction-to-foot (drain)Steady Siliconix S10-0111-Rev.

3 A, 18-Jan-102 Document Number: 65701 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT Pulse test; pulse width 300 s, duty cycle 2 %b. Guaranteed by design, not subject to production testing Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device (TJ = 25 C, unless otherwise noted)PARAMETER SYMBOL TEST CONDITIONS MIN.

4 StaticDrain-source breakdown voltageVDS VGS = 0 V, ID = 250 A 30--VVDS temperature coefficient VDS/TJID = 250 A -21-mV/ CVGS(th) temperature coefficient VGS(th) threshold voltageVGS(th)VDS = VGS, ID = 250 A leakageIGSSVDS = 0 V, VGS = 12 V -- 100nAZero gate voltage drain currentIDSSVDS = 30 V, VGS = 0 V--1 AVDS = 30 V, VGS = 0 V, TJ = 55 C --10On-state drain current aID(on) VDS 5 V, VGS = 10 V 10--ADrain-source on-state resistance aRDS(on)VGS = V, ID = A VGS = V, ID = A transconductance agfsVDS = 15 V, ID = A -13-SDynamic bInput capacitanceCiss VDS = 15 V, VGS = 0 V, f = 1 MHz-320-pFOutput capacitanceCoss -45-Reverse transfer capacitanceCrss -19-Total gate chargeQg VDS = 15 V, VGS = 10 V, ID = = 15 V, VGS = V, ID = chargeQgs resistanceRgf = 1 Turn-on delay timetd(on)

5 VDD = 15 V, RL = 6 ID A, VGEN = V, Rg = 1 -1015nsRise timetr -1525 Turn-off delay timetd(off) -2030 Fall timetf-1120 Turn-on delay timetd(on) VDD = 15 V, RL = 6 ID A, VGEN = 10 V, Rg = 1 -510 Rise timetr -1220 Turn-off delay timetd(off) -1525 Fall timetf-1015 Drain-Source Body Diode CharacteristicsContinuous source-drain diode currentISTC = 25 diode forward currentISM--15 Body diode voltageVSDIS = A, VGS = 0 diode reverse recovery timetrrIF = A, di/dt = 100 A/ s,TJ = 25 C-1120nsBody diode reverse recovery chargeQrr-510nCReverse recovery fall timeta-7-nsReverse recovery rise Siliconix S10-0111-Rev.

6 A, 18-Jan-103 Document Number: 65701 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT CHARACTERISTICS (25 C, unless otherwise noted)Output CharacteristicsOn-Resistance vs. Drain Current and Gate VoltageGate ChargeTransfer CharacteristicsCapacitanceOn-Resistance vs. Junction Drain-to-Source Voltage (V)ID - Drain Current (A)VGS= 5 V thru 3 VVGS= 2 VVGS= (on) - On-Resistance ( )ID- DrainCurrent(A)VGS= VVGS= V0246802468ID= AQg- Total Gate Charge (nC)VGS - Gate-to-Source Voltage (V)VDS= 24 VVDS= VVDS= 15 Gate-to-Source Voltage (V)- DrainCurrent (A)IDTC= 25 CTC= 125 CTC= - 55 CCrss090180270360051015202530 CissVDS- Drain-to-SourceVoltage (V)C - Capacitance (pF) 50- 250255075100125150TJ- Junction Temperature ( C)(Normalized)RDS(on) - On-ResistanceVGS= VVGS= VID= Siliconix S10-0111-Rev.

7 A, 18-Jan-104 Document Number: 65701 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT CHARACTERISTICS (25 C, unless otherwise noted)Source-Drain Diode Forward VoltageThreshold VoltageOn-Resistance vs. Gate-to-Source VoltageSingle Pulse PowerSafe Operating Area, 150 CVSD- Source-to-Drain Voltage (V)IS - Source Current (A)TJ= 25 50- 250255075100125150ID= 250 AVGS(th) (V)TJ- Temperature ( C) (on) - On-Resistance ( )VGS- Gate-to-Source Voltage (V)TJ= 25 CTJ= 125 CID= A0510152025 Power (W)Time (s) 25 CSingle Pulse100 ms10 s, DCLimited by RDS(on)*BVDSSL imited1ms100 s1s10 msVDS- Drain-to-Source Voltage (V)* VGS> minimum VGSat which RDS(on)is - Drain Current (A) Siliconix S10-0111-Rev.

8 A, 18-Jan-105 Document Number: 65701 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT CHARACTERISTICS (25 C, unless otherwise noted) Current Derating aPower DeratingNotea. The power dissipation PD is based on TJ max. = 150 C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit0123450255075100125150TC- Case Temperature ( C)ID - Drain Current (A)Package Case Temperature ( C)Power (W) Siliconix S10-0111-Rev.

9 A, 18-Jan-106 Document Number: 65701 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT CHARACTERISTICS (25 C, unless otherwise noted)Normalized Thermal Transient Impedance, Junction-to-AmbientNormalized Thermal Transient Impedance, Junction-to-Foot vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for silicon technology and package reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see Wave Pulse Duration (s)Normalized Effective TransientThermal :PDM1.

10 Duty Cycle, D =2. Per Unit Base = RthJA= 130 C/W3. TJM-TA=PDMZthJA(t)t1t24. Surface MountedDuty Cycle = Cycle = Wave Pulse Duration (s)Normalized Effective TransientThermal SiliconixPackage InformationDocument Number: (TO-236): 3-LEADbEE1132 See1DA2AA1 CSeating "CCL1 LqGauge PlaneSeating mmDimMILLIMETERS INCHES Min Max Min Max Refq3 8 3 8 ECN: S-03946-Rev. K, 09-Jul-01 DWG: 5479 Application Note 826 vishay Siliconix Document Number: : 21-Jan-0825 APPLICATION NOTERECOMMENDED MINIMUM PADS FOR ( )Recommended Minimum PadsDimensions in Inches/(mm) ( ) ( ) ( ) ( ) ( ) ( )Return to IndexReturn to IndexLegal Disclaimer Revision: 01-Jan-20221 Document Number: 91000 Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.