Resistive Products Power Dissipation

High Stability Thin Film Flat Chip Resistors

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ... MAXIMUM RESISTANCE CHANGE AT RATED DISSIPATION OPERATION MODE STANDARD POWER Rated dissipation, P70 TNPW0201 e3 0.050 W 0.075 W TNPW0402 e3 0.063 W 0.100 W ... fine trimming the resistive layer without damaging the ceramics. A further conditioning is applied in …

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DFLS1100 - Diodes Incorporated

Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and ... half wave, 60Hz, resistive or inductive load. For capacitance load, derate current by 20%. Characteristic Symbol Value Unit Peak Repetitive Reverse Voltage V ... Fig. 1 Forward Power Dissipation F ...

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Axial-Lead Glass Passivated Standard

60 Hz resistive or inductive loads. For capacitive load, derate current by 20%. 1N5400 thru 1N5408 ... Forward Power Dissipation 3456 7 8 910 16 14 12 10 8 6 4 2 0 IF(AV), AVERAGE FORWARD CURRENT (A) P F(AV) ... ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty ...

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LM1875 20W Audio Power Amplifier datasheet (Rev. A)

A power amplifier's output transistors can be damaged by excessive applied voltage, current flow, or power dissipation. The voltage applied to the amplifier is limited by the design of the external power supply, while the maximum current passed by the output devices is usually limited by internal circuitry to some fixed value. Short-

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Electrical Calculations

current for 3000 seconds. The power dissipation is based on an RMS current of sqrt(600x600x30 + 100x100x3000 + 0 x 3000)/sqrt(30 + 3000 + 3000) = 82.25 Amps. To calculate the Power Dissipation of a busbar, enter in the width, length and thickness of the bar, and the RMS Current passing through it. Select the units as either metric or imperial.

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30V N-Channel MOSFET

B. The power dissipation P D is based on T J(MAX) =150 °C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T J(MAX) =150 °C. Ratings are based on low frequency and duty cycles ...

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30V N-Channel MOSFET

B. The power dissipation P D is based on T J(MAX) =150 °C, using ≤10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature T J(MAX) =150 °C. Ratings are based on low frequency and duty cycles to keep initialT J=25 °C. D.

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RS1M - Fast Rectifiers

PD Power Dissipation 1.19 W R JA Junction−to−Ambient Thermal Resistance (Note 1) 105 °C/W R JL Junction−to−Lead Thermal Resistance (Note 1) 32 °C/W 1. Device mounted on FR−4 PCB 0.013 mm. ELECTRICAL CHARACTERISTICS (Values are at TA = 25°C unless otherwise noted) Symbol Parameter Test Conditions Value RS1A RS1B RS1D RS1G RS1J RS1K ...

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3310 9 mm Square Sealed Panel Control - Bourns, Inc.

3310 – 9 mm Square Sealed Panel Control Features n Conductive plastic n PC board and bushing mount n Plastic or metal bushing and plastic shaft n Withstands typical industrial washing processes n Compact package saves board and panel space Electrical Characteristics1 Standard Resistance Range - Linear 1 K ohms to 1 megohm