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Dissipation

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2N4401 General Purpose Transistors

2N4401 General Purpose Transistors

www.farnell.com

Total Device Dissipation @ TA = 25°C Derate above 25°C PD 625 5.0 mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 12 W mW/°C Operating and Storage Junction Temperature Range TJ, Tstg −55 to +150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient R JA 200 °C/W

  General, Purpose, Transistor, Dissipation, 2n4401 general purpose transistors, 2n4401

The fluctuation-dissipation theorem - USTC

The fluctuation-dissipation theorem - USTC

home.ustc.edu.cn

dissipation theorem which states that the linear response of a given system to an external perturbation is expressed in terms of fluctuation properties of the system in thermal equilibrium. This theorem may be represented by a stochastic equation describing the fluctuation, which is a generalization of the familiar Langevin

  Theorem, Dissipation, Fluctuation, The fluctuation dissipation theorem

74HC14; 74HCT14 • JESD8C (2.7 V to 3.6 V) • JESD7A (2.0 V ...

74HC14; 74HCT14 • JESD8C (2.7 V to 3.6 V) • JESD7A (2.0 V ...

assets.nexperia.com

dissipation capacitance per package; VI = GND to VCC - 1.5 V [3] - 8 - - - - - pF [1] tpd is the same as tPHL and tPLH. [2] tt is the same as tTHL and tTLH. [3] CPD is used to determine the dynamic power dissipation (PD in μW): PD = CPD × VCC 2 × f iL × VCC 2 × f o) where: fi = input frequency in MHz; fo = output frequency in MHz; CL ...

  Dissipation

ULN2001, ULN2002 ULN2003, ULN2004 - STMicroelectronics

ULN2001, ULN2002 ULN2003, ULN2004 - STMicroelectronics

www.st.com

Note: Maximum power dissipation is a function of T J(max), R thJA and T A. The maximum allowable power dissipation at any allowable ambient temperature is P D = (T J(max) – T A) / R thJA. Operating at the absolute maximum T J of +150°C can affect reliability. Table 1. Absolute maximum ratings Symbol Parameter Value Unit VO Output voltage 50 V

  Dissipation

Optocoupler, Phototransistor Output, with Base Connection

Optocoupler, Phototransistor Output, with Base Connection

www.vishay.com

Power dissipation Pdiss 70 mW OUTPUT Collector emitter breakdown voltage VCEO 70 V Emitter base breakdown voltage VEBO 7V Collector current IC 50 mA t ≤ 1 ms IC 100 mA Power dissipation Pdiss 70 mW COUPLER Isolation test voltage VISO 5000 VRMS Creepage ≥m 7m Clearance ≥m 7m Isolation thickness between emitter and detector ≥ 0.4 mm

  With, Base, Connection, Output, Dissipation, Phototransistor, Optocoupler, Phototransistor output, With base connection

Power MOSFET - Vishay Intertechnology

Power MOSFET - Vishay Intertechnology

www.vishay.com

Maximum power dissipation TC = 25 °C PD 150 W Peak diode recovery dV/dt c dV/dt -5.5 V/ns Operating junction and storage temperature range TJ, Tstg-55 to +175 °C Soldering recommendations (peak temperature) d For 10 s 300 Mounting torque 6-32 or M3 screw 10 lbf · …

  Vishay, Dissipation, Mosfets, Vishay intertechnology, Intertechnology

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