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4Gb E-die DDR3L SDRAM Only x16 - Mobile | TV
semiconductor.samsung.com- 2 - K4B4G1646E datasheet DDR3L SDRAM Rev. 1.1 Revision History Revision No. History Draft Date Remark Editor 1.0 - First SPEC Release Dec. 2014 - J.Y.Lee 1.1 - Addition of information about I-temp 23th Jun. 2016 - J.Y.Lee
4Gb E-die DDR3L SDRAM Only x16 - Samsung us
www.samsung.comThe 4Gb DDR3 SDRAM E-die is organized as a 32Mbit x 16I/Os x 8banks, device. This synchronous device achieves high speed double-data-rate transfer rates of up to 1866Mb/sec/pin (DDR3-1866) for general applica-tions. The chip is designed to comply with the following key DDR3 SDRAM fea-