Search results with tag "Gallium nitride power"

Fundamentals of Gallium Nitride Power Transistors

EPC’s enhancement mode gallium nitride (eGaN®) transistors behave very similarly to silicon power MOSFETs. A positive bias on the gate relative to the source causes a field effect which attracts electrons that complete a bidirectional channel between the drain and the source. A key difference between gallium nitride (GaN) and silicon is that

  Power, Nitride, Gallium nitride, Gallium, Gallium nitride power