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SST26VF016B 2.5V/3.0V 16 Mbit Serial Quad I/O (SQI) Flash ...
ww1.microchip.comMay 14, 2019 · Flash® technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and man-ufacturability compared with alternate approaches. SST26VF016B significantly improves performance and reliability, while lowering power consumption. These devices write (Program or Erase) with a single power supply of 2.3-3.6V.
Serial Quad I/O (SQI) Flash Memory - …
ww1.microchip.comFlash® technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and man-ufacturability compared with alternate approaches. SST26VF064B/064BA significantly improve perfor-mance and reliability, while lowering power consump-tion. These devices write (Program or Erase) with a single power supply of 2.3-3.6V.