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J IR2151 - Infineon Technologies

J IR2151 - Infineon Technologies

www.irf.com

Features •Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune •Undervoltage lockout •Programmable oscillator frequency f = ×+ × 1 1.4 (R 75 ) CTTΩ •Matched propagation delay for both channels •Low side output in phase with RT Description The IR2151 is a high voltage, …

  Technologies, Infineon, Ir2151, J ir2151 infineon technologies

Infineon IKW50N65F5FKSA1 TRENCHSTOP™ 5 Insulated …

Infineon IKW50N65F5FKSA1 TRENCHSTOP™ 5 Insulated

www.chipworks.com

Insulated-Gate Bipolar Transistor . Process Review . 1891 Robertson Road, Suite 500, Ottawa, ON K2H 5B7 Canada – Tel: 613-829-0414 www.chipworks.com . Infineon IKW50N65F5FKSA1 TRENCHSTOP 5 IGBT Process Review . Some of the information in this report may be covered by patents, mask and/or copyright

  Gate, Transistor, Insulated, Bipolar, Insulated gate bipolar transistor, Infineon, Infineon ikw50n65f5fksa1 trenchstop 5 insulated, Ikw50n65f5fksa1, Trenchstop

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