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PD - 91405C IRF5210S/L - Infineon Technologies

PD - 91405C IRF5210S/L - Infineon Technologies

www.irf.com

IRF5210S/L HEXFET® Power MOSFET PD - 91405C l Advanced Process Technology l Surface Mount (IRF5210S) l Low-profile through-hole (IRF5210L) l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated 5/13/98 S D G Absolute Maximum Ratings Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low

  Channel, Irf5210s

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