Search results with tag "Bsim4"
LOD Effect: Modeling and Implementation - MOS-AK
www.mos-ak.org14 3/8/2016 Public Information PDK Implementation – BSIM4 Model NG=1 The BSIM4 model requires arguments “sa” “sb” to activate LOD effect equations. (key model parameters: saref, sbref, ku0, kvth0, kvsat) #1 Approximate solution “area approach” The arguments “sa” “sb” can be calculated internally in the model subcircuit
FinFET 3D Transistor & the Concept Behind It
microlab.berkeley.eduBSIM3, BSIM4, BSIM-SOI used by hundreds of companies for design of ICs worth half trillion dollars • BSIM models of FinFET and UTBSOI are available – free BSIM SPICE Models Chenming Hu, August 2011
1. MOSFETの物性とモデル化の基礎 - Gunma U
kobaweb.ei.st.gunma-u.ac.jpBSIM4，EKV3.0 HiSIM2－表面電位型 RFマクロモデル BSIM6-電荷ベース SOI CMOS BSIMSOI3, 4 DMOS, LDMOS HVMOS, IGBT, SiCJFET HiSIM-HV, カスタムマクロモデル HiSIM-IGBT, A-IGBT, A-LDMOS, A-SiC-JFET，A-Self-heat* BJT/SiGeBJT HiCUM2.1 A-ScalableBJT MEXTRAM504 Gummel-Poon Enhanced G-P
BSIM4.3.0 MOSFET Model - CMOSedu.com
cmosedu.com1.1 Gate Dielectric Model1- 1 1.2 Poly-Silicon Gate Depletion1-2 1.3 Effective Channel Length and Width1-5 Chapter 2: Threshold Voltage Model 2-1 2.1 Long-Channel Model With Uniform Doping2- 1 2.2 Non-Uniform Vertical Doping2-2 2.3 Non-Uniform Lateral Doping: Pocket (Halo) Implant2- 5 2.4 Short-Channel and DIBL Effects2-6 2.5 Narrow-Width Effect2-9