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Lecture 12: Photodiode detectors
www-eng.lbl.govThe bandgap for direct absorption in silicon is 4.10 eV, corresponding to a threshold of 0.3 m. Germanium is another semiconductor material for which the lowest energy absorption takes place by indirect optical transitions. Indirect absorption will occur up to a threshold of 1.85 m.
The Bandgap Reference
www.seas.ucla.eduthe bandgap circuit has served as an essential component in most inte-grated circuits. This simple, robust idea provides a temperature-indepen-dent (TI) voltage and a proportional-to-absolute-temperature (PTAT) current. In this article, we study the principles of bandgap circuit design. A Brief History Semiconductor technology does not