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Lecture 12: Photodiode detectors
www-eng.lbl.govThe bandgap for direct absorption in silicon is 4.10 eV, corresponding to a threshold of 0.3 m. Germanium is another semiconductor material for which the lowest energy absorption takes place by indirect optical transitions. Indirect absorption will occur up to a threshold of 1.85 m.
The Bandgap Reference - University of California, Los Angeles
www.seas.ucla.eduLow-Voltage Bandgap References The basic bandgap expression, VV BE +17.,2 T takes on a value of about 1.25 V at T = 300K, defying direct implementation in today’s low-voltage technologies. We describe one low-voltage example and refer the reader to [10] and [11] for others. For a low-voltage bandgap reference to have a zero TC, it must produce an