Transcription of 半導体工学（12）
1 11 12 MOS (2) 2 MOS N MOS (Vth) poly-SiOxideN+N+P ( VGS< Vth ) ( 0V )poly-SiOxideN+N+P ( VGS>Vth ) ( 0V ) ( VDS> 0V ) ( VDS> 0V )3 MOS (VGS) (Vth) IDS IDS (VGS) (IDS) (Vth)VDS poly-SiOxiden+ + (VGS) (VDS>0V)A DS4 MOS VDS<VGS Vth VGS-Vth<VDS (VDS) (I)Vth < VGS( )VDS<VGS-VthVDS=VGS-VthVDS>VGS-VthVDS VGS 5 MOS ( ) Cox oxoxoxtC =poly-SiOxideN+N+P L =ox[] Cg oxgCWLC oxt tox6N MOS VDS=VGS Vth (IDS) () =221 DSDSthGSoxnDSVVVVCLWI () =221thGSoxnDSVVCLWI VDS=VGS Vth (VDS) VDS=VG Vth VDS (7 10)(7 11)27 m VGS IDS ()thGSoxnmVVCLWg = (7 12) oxnCLW (VGS) (IDS)VthoxnmCLWg = (IDS)VthGSDSmdVdIg= (VGS) () =221 DSDSthGSoxnDSVVVVCLWI () =221thGSoxnDSVVCLWI (7 12) 8N MOS QI()thGOXIVVCQ =PN+Vth < VGSVDS<VGS-Vth(7 6)()thDSGOXIVVVCQ =()thxGOXIVVVCQ =(7 9) N+ DS()dxdVVVVCWxEWQI xthxGOXnnIDS == )(()xVthxGOXnLDSdVVVVCWdxIDS =00 0=xLx=()
2 DSVxxthGOXnDSVVVVCWIL0221 = () = 221 DSDSthGSoxnDSVVVVCLWI 9 q PVG > Vth QQGQIQB toxdq NAq SVG SVoxVoxBISGQQQQ = =SOXGVV +=OXOXOXtC =OXGOXCQV=SOXBISOXSSOXGGCQQCQCQV ++ =+ =+=thGVV=0 IQPS =2 POXBthCQV + =2()()IOXPBOXSBIthGOXQCQCQQVVC = + ++ = 2(7 1)(7 2)(7 3)(7 4)(7 5)PS 2Q( VG>Vth )()thGOXIVVCQ = (7 6)dNqQAB =(7 7)( ox )(7 4) (7 5) 10P MOS P MOS (Vth<0V) poly-SiOxideP+P+N ( Vth < VGS< 0 ) ( 0V )poly-SiOxideP+P+N ( VGS< Vth < 0) ( 0V ) ( ) ( VDS< 0 ) ( VDS<0 )11 MOS N MOS PMOS (VDS) (IdS)poly-SiOxideN+N+P 0V poly-SiOxideP+P+N 0V P MOS 12 IDSVth(n)( > 0 V )VGVth(n)( < 0 V )N ( )N ( )Vth(p)( > 0 V )Vth(p)( < 0 V )P ( )P ( ) VGS V VGS V 313N MOS N+P+P (S) (G) (D)NMOS GND 1 =Vdd 0VN+ 0 =0V 14P MOS (S) (G)P N+N (D) PMOS Vdd VddP 1 =Vdd 0 =0V 15 CMOS NOT ( ) NMOS PMOS (Complimentary)
3 ON CMOS CMOS VLSI CMOS Vdd 0V NMOSPMOS 0 =0V 1 =Vdd 0 =0V 1 =Vdd 16 CMOS NMOS PMOS N+NN+P+P NMOSPMOSP+P+N+17 NMOS PMOS NMOSPMOS GND Vdd
