Transcription of 半導体工学（12）
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半導体工学（12）
11 12 MOS (2) 2 MOS N MOS (Vth) poly-SiOxideN+N+P ( VGS< Vth ) ( 0V )poly-SiOxideN+N+P ( VGS>Vth ) ( 0V ) ( VDS> 0V ) ( VDS> 0V )3 MOS (VGS) (Vth) IDS IDS (VGS) (IDS) (Vth)VDS poly-SiOxiden+ + (VGS) (VDS>0V)A DS4 MOS VDS<VGS Vth VGS-Vth<VDS (VDS) (I)Vth < VGS( )VDS<VGS-VthVDS=VGS-VthVDS>VGS-VthVDS VGS 5 MOS ( ) Cox oxoxoxtC =poly-SiOxideN+N+P L =ox[] Cg oxgCWLC oxt tox6N MOS VDS=VGS Vth (IDS) () =221 DSDSthGSoxnDSVVVVCLWI () =221thGSoxnDSVVCLWI VDS=VGS Vth (VDS) VDS=VG Vth VDS (7 10)(7 11)27 m VGS IDS ()thGSoxnmVVCLWg = (7 12) oxnCLW (VGS) (IDS)VthoxnmCLWg = (IDS)VthGSDSmdVdIg= (VGS) () =221 DSDSthGSoxnDSVVVVCLWI ()
2 7 相互コンダクタンスと利得係数 相互コンダクタンスgmとは，ゲート電圧V GSの変化に対す るドレイン電流I DSの変化の割合 m nCox()VGS Vth L W g =μ − (7・12) 上記の回路の特性値 をnCox 利得係数βと呼ぶ L
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