1A, 50V - 600V Surface Mount Ultrafast Power Rectifier

1 mur105s - MUR160S. Taiwan Semiconductor 1A, 50V - 600v Surface Mount Ultrafast Power Rectifier FEATURES KEY PARAMETERS. Glass passivated chip junction PARAMETER VALUE UNIT. Ideal for automated placement IF(AV) 1 A. Ultrafast recovery time for high efficiency VRRM 50 - 600 V. Low forward voltage, low Power loss Compliant to RoHS Directive 2011/65/EU and TJ MAX 175 C. in accordance to WEEE 2002/96/EC Package DO-214AA (SMB). Halogen-free according to IEC 61249-2-21. Configuration Single Die APPLICATIONS. Switching mode Power supply (SMPS). Adapters Lighting application Converter MECHANICAL DATA. Case: DO-214AA (SMB). Molding compound meets UL 94V-0 flammability rating Moisture sensitivity level: level 1, per J-STD-020. Packing code with suffix "G" means green compound (halogen-free). Part no. with suffix H means AEC-Q101 qualified Terminal: Matte tin plated leads, solderable per J-STD-002.

2 Meet JESD 201 class 2 whisker test Polarity: As marked Weight: g (approximately) DO-214AA (SMB). ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted). MUR MUR MUR MUR MUR MUR. PARAMETER SYMBOL UNIT. 105S 110S 115S 120S 140S 160S. MUR MUR MUR MUR MUR MUR. Marking code on the device 105S 110S 115S 120S 140S 160S. Repetitive peak reverse voltage VRRM 50 100 150 200 400 600 V. Reverse voltage, total rms value VR(RMS) 35 70 105 140 280 420 V. Maximum DC blocking voltage VDC 50 100 150 200 400 600 V. Forward current IF(AV) 1 A. Surge peak forward current, ms single half sine-wave superimposed on IFSM 40 35 A. rated load per diode Junction temperature TJ - 55 to +175 C. Storage temperature TSTG - 55 to +175 C. 1 Version: k1701 . mur105s - MUR160S. Taiwan Semiconductor THERMAL PERFORMANCE. PARAMETER SYMBOL LIMIT UNIT. Junction-to-lead thermal resistance R JL 17 C/W.

3 ELECTRICAL SPECIFICATIONS (TA = 25 C unless otherwise noted). PARAMETER CONDITIONS SYMBOL TYP MAX UNIT. mur105s V. MUR110S V. - (1). MUR115S V. Forward voltage per diode IF = 1A,TJ = 25 C VF. MUR120S V. MUR140S V. - MUR160S V. mur105s V. MUR110S V. - (1). MUR115S V. Forward voltage per diode IF = 1A,TJ = 150 C VF. MUR120S V. MUR140S V. - MUR160S V. mur105s A. MUR110S A. - 2. Reverse current @ rated VR MUR115S A. (2) TJ = 25 C IR. per diode MUR120S A. MUR140S A. - 5. MUR160S A. mur105s A. MUR110S A. - 50. Reverse current @ rated VR MUR115S A. (2). TJ = 150 C IR. per diode MUR120S A. MUR140S A. - 150. MUR160S A. mur105s ns MUR110S ns - 25. MUR115S IF= ,IR= ns Reverse recovery time trr MUR120S IRR= ns MUR140S ns - 50. MUR160S ns Notes: 1. Pulse test with PW= ms 2. Pulse test with PW=30 ms 2 Version: k1701 . mur105s - MUR160S. Taiwan Semiconductor ORDERING INFORMATION.

4 PART NO. PACKING PACKING CODE. PART NO. PACKAGE PACKING. SUFFIX CODE SUFFIX(*). R5 SMB 850 / 7" Plastic reel MUR1xxS. H R4 G SMB 3,000 / 13" Paper reel (Note 1). M4 SMB 3,000 / 13" Plastic reel Note: 1. "x" defines voltage from 50V ( mur105s ) to 1000V (MUR160S). *: Optional available EXAMPLE P/N. PART NO. PACKING PACKING CODE. EXAMPLE P/N PART NO. DESCRIPTION. SUFFIX CODE SUFFIX. AEC-Q101 qualified MUR160 SHR5G MUR160S H R5 G Green compound 3 Version: k1701 . mur105s - MUR160S. Taiwan Semiconductor CHARACTERISTICS CURVES. (TA = 25 C unless otherwise noted). Fig1. Forward Current Derating Curve Fig2. Typical Junction Capacitance 70. AVERAGE FORWARD CURRENT (A). 60. 50. CAPACITANCE (pF). 1. 40. 30 mur105s -120S. 20. 10. MUR140S-160S. 0 0. 0 25 50 75 100 125 150 175 0 4 8 12 16 20 24. LEAD TEMPERATURE ( C) REVERSE VOLTAGE (V). Fig3.

5 Typical Reverse Characteristics Fig4. Typical Reverse Characteristics 100 100. INSTANTANEOUS REVERSE CURRENT ( A). INSTANTANEOUS REVERSE CURRENT ( A). mur105s -120S MUR140S-160S. 10 TJ=150 C 10 TJ=150 C. 1 1. TJ=25 C. TJ=25 C. 10 20 30 40 50 60 70 80 90 100 10 20 30 40 50 60 70 80 90 100. PERCENT OF RATED PEAK REVERSE VOLTAGE (%) PERCENT OF RATED PEAK REVERSE VOLTAGE (%). 4 Version: k1701 . mur105s - MUR160S. Taiwan Semiconductor Fig5. Typical Forward Characteristics Fig6. Typical Forward Characteristics 10 10. CURRENT(A). INSTANTANEOUS FORWARD CURRENT(A). mur105s -120S MUR140S-160S. CURRENT(A). FORWARD. TJ=150 C TJ=150 C. FORWARD. 1 1. INSTANTANEOUS. TJ=25 C TJ=25 C. INSTANTANEOUS. 0 1 2 0 1 2. FORWARD VOLTAGE (V) FORWARD VOLTAGE (V). Fig5. Maximum Non-repetitive Forward Surge Current 50. PEAK FORWARD SURGE CURRENT (A). 40. 30.

6 20. 10. 0. 1 10 100. NUMBER OF CYCLES AT 60 Hz 5 Version: k1701 . mur105s - MUR160S. Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS. DO-214AA (SMB). Unit (mm) Unit (inch). DIM. Min Max Min Max A B C D E F G H SUGGESTED PAD LAYOUT. Symbol Unit (mm) Unit (inch). A B C D E MARKING DIAGRAM. P/N = Marking Code G = Green Compound YW = Date Code F = Factory Code 6 Version: k1701 . mur105s - MUR160S. Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.

7 The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 7 Version: k1701 .