2. Features and benefits BT136-600E

1 TO-220 ABBT136-600E4Q Triac30 September 2013 Product data sheetScan or click this QR code to view the latest information for this product1. General descriptionPlanar passivated sensitive gate four quadrant triac in a SOT78 plastic package intendedfor use in general purpose bidirectional switching and phase control applications. Thissensitive gate "series E" triac is intended to be interfaced directly to microcontrollers,logic integrated circuits and other low power gate trigger Features and benefits Direct triggering from low power drivers and logic ICs High blocking voltage capability Low holding current for low current loads and lowest EMI at commutation Planar passivated for voltage ruggedness and reliability Sensitive gate Triggering in all four quadrants3.

2 Applications General purpose motor control General purpose switching4. Quick reference dataTable reference dataSymbolParameterConditionsMinTypMaxUn itVDRM repetitive peak off-state voltage--600 VITSMnon-repetitive peak on-state currentfull sine wave; Tj(init) = 25 C;tp = 20 ms; Fig. 4; Fig. 5; Fig. 3--25 AIT(RMS)RMS on-state currentfull sine wave; Tmb 107 C; Fig. 1;Fig. 2; Fig. 3--4 AStatic characteristicsVD = 12 V; IT = A; T2+ G+;Tj = 25 C; Fig. = 12 V; IT = A; T2+ G-;Tj = 25 C; Fig. 7-410mAIGT gate trigger currentVD = 12 V; IT = A; T2- G-;Tj = 25 C; Fig. 7-510mANXP SemiconductorsBT136-600E4Q TriacBT136-600 EAll information provided in this document is subject to legal disclaimers.

3 NXP 2013. All rights reservedProduct data sheet30 September 20132 / 13 SymbolParameterConditionsMinTypMaxUnitVD = 12 V; IT = A; T2- G+;Tj = 25 C; Fig. 7-1125mAIHholding currentVD = 12 V; Tj = 25 C; Fig. Pinning informationTable informationPinSymbolDescriptionSimplifie d outlineGraphic symbol1T1main terminal 12T2main terminal 23 GgatembT2mounting base; mainterminal 212mb3TO-220AB (SOT78)sym051T1GT26. Ordering informationTable informationPackageType numberNameDescriptionVersionBT136-600 ETO-220 ABplastic single-ended package; heatsink mounted; 1 mountinghole; 3-lead TO-220 ABSOT78BT136-600E/L01TO-220 ABplastic single-ended package; heatsink mounted; 1 mountinghole; 3-lead TO-220 ABSOT78 NXP SemiconductorsBT136-600E4Q TriacBT136-600 EAll information provided in this document is subject to legal disclaimers.

4 NXP 2013. All rights reservedProduct data sheet30 September 20133 / 137. Limiting valuesTable valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).SymbolParameterConditionsMinMaxUn itVDRM repetitive peak off-state voltage-600 VIT(RMS)RMS on-state currentfull sine wave; Tmb 107 C; Fig. 1;Fig. 2; Fig. 3-4 Afull sine wave; Tj(init) = 25 C;tp = 20 ms; Fig. 4; Fig. 5; Fig. 3-25 AITSMnon-repetitive peak on-statecurrentfull sine wave; Tj(init) = 25 C;tp = ms; Fig. 5; Fig. 4-27AI2tI2t for fusingtp = 10 ms; = 6 A; IG = A; dIG/dt = A/ s;T2+ G+-50A/ sIT = 6 A; IG = A; dIG/dt = A/ s;T2+ G--50A/ sIT = 6 A; IG = A; dIG/dt = A/ s;T2- G--50A/ sdIT/dtrate of rise of on-state currentIT = 6 A; IG = A; dIG/dt = A/ s;T2- G+-10A/ sIGMpeak gate current-2 APGM peak gate power-5 WPG(AV)average gate power over any 20 ms period temperature-40150 CTjjunction temperature-125 CNXP SemiconductorsBT136-600E4Q TriacBT136-600 EAll information provided in this document is subject to legal disclaimers.

5 NXP 2013. All rights reservedProduct data sheet30 September 20134 / 13 Tmb( C)-50150100050003aae82823145IT(RMS)(A)0 Fig. on-state current as a function of mountingbase temperature; maximum values003aae8304812IT(RMS)(A)0surgedurat ion(s)10-210110-12610f = 50 HzTmb 107 CFig. on-state current as a function of surgeduration; maximum values003aae8274268 Ptot(W)0IT(RMS)(A)054231conductionangle( degrees) =180 120 90 60 30 = conduction anglea = form factor = IT(RMS) / IT(AV)Fig. power dissipation as a function of RMS on-state current; maximum valuesNXP SemiconductorsBT136-600E4Q TriacBT136-600 EAll information provided in this document is subject to legal disclaimers. NXP 2013. All rights reservedProduct data sheet30 September 20135 / 13003aae831102030 ITSM(A)0numberofcycles11041031010251525 ITSMtITTj(init)=25 Cmax1/ff = 50 HzFig.

6 Peak on-state current as a function of the number of sinusoidal current cycles; maximumvalues003aae829tp(s)10-510-110-21 0-410-3102103 ITSM(A)10 ITSMtITTj(init)=25 Cmaxtp(1)(2)tp 20 ms(1) dIT/dt limit(2) T2- G+ quadrant limitFig. peak on-state current as a function of pulse width; maximum valuesNXP SemiconductorsBT136-600E4Q TriacBT136-600 EAll information provided in this document is subject to legal disclaimers. NXP 2013. All rights reservedProduct data sheet30 September 20136 / 138. Thermal characteristicsTable characteristicsSymbolParameterConditions MinTypMaxUnithalf cycle; Fig. (j-mb)thermal resistancefrom junction tomounting basefull cycle; Fig. 6--3K/WRth(j-a)thermal resistancefrom junction toambientin free air-60-K/W003aae836tp(s)10-511010-110-21 0-410-3110-110 Zth(j-mb)(K/W)10-2bidirectionalunidirect ionaltpPtFig.

7 Thermal impedance from junction to mounting base as a function of pulse widthNXP SemiconductorsBT136-600E4Q TriacBT136-600 EAll information provided in this document is subject to legal disclaimers. NXP 2013. All rights reservedProduct data sheet30 September 20137 / 139. CharacteristicsTable characteristicsVD = 12 V; IT = A; T2+ G+;Tj = 25 C; Fig. = 12 V; IT = A; T2+ G-;Tj = 25 C; Fig. 7-410mAVD = 12 V; IT = A; T2- G-;Tj = 25 C; Fig. 7-510mAIGT gate trigger currentVD = 12 V; IT = A; T2- G+;Tj = 25 C; Fig. 7-1125mAVD = 12 V; IG = A; T2+ G+;Tj = 25 C; Fig. 8-315mAVD = 12 V; IG = A; T2+ G-;Tj = 25 C; Fig. 8-1020mAVD = 12 V; IG = A; T2- G-;Tj = 25 C; Fig. currentVD = 12 V; IG = A; T2- G+;Tj = 25 C; Fig.

8 8-420mAIHholding currentVD = 12 V; Tj = 25 C; Fig. voltageIT = 5 A; Tj = 25 C; Fig. = 12 V; IT = A; Tj = 25 C;Fig. trigger voltageVD = 400 V; IT = A; Tj = 125 C;Fig. currentVD = 600 V; Tj = 125 characteristicsdVD/dtrate of rise of off-statevoltageVDM = 402 V; Tj = 125 C; (VDM = 67%of VDRM); exponential waveform; gateopen circuit-50-V/ stgtgate-controlled turn-ontimeITM = 6 A; VD = 600 V; IG = A; dIG/dt = 5 A/ s-2- sNXP SemiconductorsBT136-600E4Q TriacBT136-600 EAll information provided in this document is subject to legal disclaimers. NXP 2013. All rights reservedProduct data sheet30 September 20138 / 13Tj( C)-6014090-1040003aae8331230(1)(2)(3)(4) (1)(2)(3)(4)IGTIGT(25 C)(1) T2- G+(2) T2- G-(3) T2+ G-(4) T2+ G+Fig.

9 Gate trigger current as a function ofjunction temperatureTj( C)-6014090-1040003aae8351230 ILIL(25 C)Fig. latching current as a function ofjunction temperatureTj( C) (25 C)Fig. holding current as a function ofjunction temperatureVT(V)0321003aae8344812IT(A)0( 1)(2)(3)Vo = VRs = (1) Tj = 125 C; typical values(2) Tj = 125 C; maximum values(3) Tj = 25 C; maximum valuesFig. current as a function of on-statevoltageNXP SemiconductorsBT136-600E4Q TriacBT136-600 EAll information provided in this document is subject to legal disclaimers. NXP 2013. All rights reservedProduct data sheet30 September 20139 / 13Tj( C) (25 C)Fig. gate trigger voltage as a function of junction temperatureNXP SemiconductorsBT136-600E4Q TriacBT136-600 EAll information provided in this document is subject to legal disclaimers.

10 NXP 2013. All rights reservedProduct data sheet30 September 201310 / 1310. Package (mmaretheoriginaldimensions)Plasticsingl e-endedpackage;heatsinkmounted;1mounting hole;3-leadTO-220AB0510mmscalebb1(2) (2) (1)L2(1) (1)b1(2)(3 )b2(2)(2 )eeb(3 )AEA1cQL2(1)mountingbaseFig. outline TO-220AB (SOT78)NXP SemiconductorsBT136-600E4Q TriacBT136-600 EAll information provided in this document is subject to legal disclaimers. NXP 2013. All rights reservedProduct data sheet30 September 201311 / 1311. Legal sheet statusDocumentstatus [1][2]Productstatus [3]DefinitionObjective[short] datasheetDevelopmentThis document contains data fromthe objective specification for [short] datasheetQualificationThis document contains data from thepreliminary [short] datasheetProductionThis document contains the productspecification.