2012. 7. 9 窒化物半導体応用研究会 ... - astf.or.jp

1 2012. 7. 9 . SiC .. 1. SiC . 2. SiC . 3. SiC . 4. SiC . 5.. 2.. DC AC AC DC DC DC( ) AC AC( ) . (2001) (2008) 4 (2030) 10 (2050).. 104. Power Transmission Rated Current (A). 103 Traction HEV/EV Factory Automation Motor 102 Automobile Control Home Electronics Appliance DC-DC. (ABS, SW Power converter 101. Injector) Supply SiC . Server AC. Telecom. Adaptor . PC. HDD Lamp Ballast 0. 10. 101 102 103 104. Rated Voltage (V) 3. SiC . vs. 10. 9. 100 DC Transmission SiC. Conversion Capacity (VA). On-Resistance (m cm2). 8 Large Factory 10. Bullet Train 7. 10. 10 UPS. 10. 6. THY. GTO. Inverter Si 10. 5. IGBT. Electric 1 Si BJT. Telephone Vehicle 4 Line 10. SiC Switching 10. 3. POWER-IC MOSFET Power Module 1 2 3 4 5 6 7. 10 100 1000 10000 10 10 10 10 10 10 10. Blocking Voltage (V) Operating Frequency (Hz). SW .. 4. SiC . 150 mm WAFER SIZE. 100 mm 100 mm 150 mm 75 mm : < ?0,000 . 50 mm (100 mmf). 35 mm 3-4 good vendors 25mm 1992 1994 1996 1998 2000 2002 2004 2006 2008 2010 2012. YEAR. : ~ 10-2 cm (n-type).

2 : > 1010 cm 5. 4H-SiC{0001} . b .. (MP) nc (n 3) // c 0~ cm-2.. (TSD) 1c, (2c) // c 500 cm-2.. (TED) 1/3<1120> // c 3000 cm-2.. (BPD) 1/3<1120> in {0001} 3000 cm-2. in {0001}. (SF) 1/3<1100> < 1 cm-1. ( ). TSD: Threading Screw Dislocation b : . TED: Threading Edge Dislocation BPD: Basal Plane Dislocation 6. SiC .. 2, 3, 4 . CVD . L/L & .. SiH4, C3H8, H2, N2 ( ). 1550~1650 . 5~20 kPa 4H-SiC(0001) 4o . SiC . 7. SiC . SiC SiC SBD . VB Faults Doping Concentration (cm-3). 1017 7. /mean 6 .. Thickness (mm).. 5 .. 4 .. 1016 .. /mean 1 3 .. 2 .. 2 . 6 7 3 8 9 .. 4 . 3 Wafer 5 1 . 1015 0 2 4 6 8 10. 0. New Equipment Conventional Position Number 3 . : s/m = % SiC . : s/m = % . ready for production 8.. 1. SiC . 2. SiC . 3. SiC . 4. SiC . 5.. 9. Si vs. SiC. SBD. PiN. MOSFET. IGBT, GTO. Si Challenge SBD. Near-Future PiN. Target MOSFET, JFET. IGBT, GTO. SiC. 100 V 300 V 600 V kV kV 10 kV 20 kV. Voltage rating (V). SiC : 600 V ~ kV . SiC : > 6 kV . 10. SiC (SBD). 1993-1995, 2008, ROHM. 1200 V 100 A.

3 Current (A). JF = 100 A/cm2 @ V. VB = 1750 V. Voltage (V). T. Kimoto et al., IEEE EDL, 14 (1993), 548. ( SiC SBD). A. Itoh et al., Proc. of ISPSD1995, ( ). 11. SiC : (PFC) . by courtesy of Dr. D. Stephani, SiCED. Si pin (D) (T).. (D) SiC . (T) . (L) (C) . SiC . EMC 12. Si IGBT SiC SBD . SiC SBD .. SiC. SBD . ( 20,000 ). 1700 V / 1200 A.. 30 . 40% .. 60 SiC SBD .. 13. SiC .. (DC AC ) Si . 10% Si Si PiN . 800 kWh/ SiC . A C.. G1. (1) G. G2. (2) G3. E. K. G4 13 kV SiC IGBT. Si 14. SiC . DLTS (n SiC) Z1/2 . 10. Z1/2 Concentration (cm -3). Z1/2 as-grown 1013. DLTS Signal (fF). 8 as-grown 6. 1012 10 min 5h EH6/7. 4 1h 2.. after oxidation (1300oC, 5h). t = ms t > 30 ms 11. 10. 0 Detection Limit 100 200 300 400(as-grown). 500 600 700 (after defect 0 elimination). 10 20 30 40 50. Temperature (K) Depth From Surface (mm). (1300 , 5 h) SiC. Z1/2, RD1/2, EH6/7 : 47 mm . (1 1011 cm-3) . T. Hiyoshi et al., Appl. Phys. Express 2 (2009), 041101. 15. PiN . 100. p+-Anode: 1x1018 cm-3. Current Density (A/cm2).

4 With mm 80 oxidation SiO2. 60. 40 n- layer: Nd = 4x1014 cm-3. without depi = 170 mm 20 oxidation n+-substrate 0. 0 5 10 15. Forward Voltage (V). VB = 11 kV. (Ron) . Without Oxidation With Oxidation Ron = 97 m cm2 Ron = 38 m cm2. 16.. JTE (SM-JTE). RESURF .. JTE .. 17. JTE (PiN ). Two-zone + SM2. SM2. 90%. Two-zone + SM1. SM1. Single-zone Two-zone H. Niwa et al., Mater. Sci. Forum, 717-720 (2012), in press. 18. (> 20 kV) PiN . Ron : 35 m cm2. ( 81%). DJTE1 = cm-2, DJTE2 = cm-2. H. Niwa et al., Appl. Phys. Exp. 5 (2012), 064001. 19.. 1. SiC . 2. SiC . 3. SiC . 4. SiC . 5.. 20. SiC MOSFET . IEMOSFET. Buried SiO2 channel Current Density (A/cm2). p-epilayer Drain Current (A). n+ N+-implanted n+. p p p+ p+. n-epilayer n+-substrate : mm 1100 V m cm2 (Si face). 12 mm 660 V m cm2 (C face). S. Harada et al. IEDM2006, K. Fukuda et al. ICSCRM2007, We-2A-1. 21. 1200 V 200 A SiC DMOSFET (Cree). VDS = V @ 200 A (VGS = 20 V). Lch = mm Ron = m cm2. 7 mm x 8 mm (active area: cm2). mch = 22 cm2/Vs VB = 1550 V.

5 22. vs. (SiC ). Ron VB (2010). : SiC MOSFET : SiC JFET. 1) MOS . Specific On-Resistance ( cm2). Si limit 2) ( ). -1 Si IGBT. 10 (unipolar). SiC. IGBT? 10-2. SiC MOSFETs: Si IGBT .. 10-3 SiC limit - Ron (unipolar) - . - . 102 103 104. Blocking Voltage (V). 23. SiC MOSFET ( ). 2010 12 . x mm2. Normally-OFF. (VTH ~ 3 V). Si SiC. 200oC. 200oC. 24. SiC . 5mm . SiC SiC-SBD. 1/4 5mm . Si- SiC- . SiC-MOSFET. Si 11kW SiC 10W/cc SiC 11kW/400V . Si 1/4 . 25. SiC . 100. 11 kW SiC 11 W). SiC W). W/cm 3). Tj 125 10. 15kHz . 434 W .. 1 . HEV .. 70 .. 1970 1980 1990 2000 2010 2020.. 130 W.. Si SiC .. 26. (40 W/cc) SiC FUPET .. (5 nH). K. Matsui et al. Mater. Sci. Forum, 717-720 (2012), 1233. 27. 1 MW All SiC (Cree/Powerex . 10 kV 10 A SiC MOSFET x 12. 10 kV 20 A SiC JBS x 6. 1 MW Solid-State Power Substation : 97%. : 1/2, : 1/4 (Si ). 28. (b > 400) SiC BJT. 500 40. BJT on (0001) IB = 0 b = 439. Common-Emitter 400 BJT on (000-1). Current Gain step 30. 300. IC (mA). 20. 200. 100 10. 0 -5 -4 -3 -2 -1.

6 0. 10 10 10 10 10 0 2 4 6 8 10. Collector Current (A) VCE (V). High injection mode at low IC due to the lower base doping on (0001) Si-face b = 257 on (0001) C-face b = 439. Highest current gain ever reported First operation of C-face BJTs with current gain beyond 400. H. Miyake et al, IEEE Electron Device Lett. 32 (2011), 841. 29. 12 kV 100 A SiC (Cree).. 1 cm x 1 cm (termination: 600 mm). VF = V @ 100 A. (Ron = 4 m cm2). 30. SiC IGBT (Cree). 31.. 1. SiC . 2. SiC . 3. SiC . 4. SiC . 5.. 32. SiC .. Cree Dow Corning( ) SiCrystal . II-IV( ) Norstel( ) TankeBlue( ).. Cree Dow Corning .. HOYA(3C) .. 33. SiC .. Infineon( : SBD, JFET) Cree : SBD . SemiSouth ( : SBD, JFET) STMicro( : SBD) . Fairchild ( : BJT). (SBD, MOSFET) (SBD).. GE( ) GENESiC( ) UnitedSiC( ) Northrop ( ) .. 34. SiC . SiC: . 1.. Si IGBT Hybrid Pair . 2. MOSFET. Si IGBT .. 3. PiN IGBT .. 35.