Transcription of マイクロ波増幅器の基礎 - apmc-mwe.org
1 Fundamentals of Microwave Amplifiers Kazuhiko Honjo University of Electro-Communications 1-5-1, Chofugaoka, Chofu, Tokyo, 182-8585, Japan TEL: +81-424-43-5237, FAX: +81-424-43-5230, E-mail: The basic principles for microwave amplifiers are described. For the microwave power amplifier design, the linear circuit theory can be used for estimating the power gain and the oscillation stability analysis. However, the nonlinear circuit analysis including the microwave active devices are necessary for designing the power level and the power efficiency. This paper describes transistor modeling techniques and their microwave amplifier applications. 2.
2 GaAsFET AlGaN/GaN HEMT, InGaP/GaAs HBT SiMOS SiGeHBT GaAsFET GaAsFET .1 .2 GaAsFET GaAs S D G GaAs GaAs GaAs 20 V GaN 100 V .2 GaAsFET.
3 3 m n GaAs GaAs ZG (AuGe-Ni) (AuGe-Ni)n+-GaAsn+-GaAs (Al) DR LG aw dS S D SGG n= , 100 m gm= mS, IDSS=24mA VT=-2V ( ) GaAsFET 10 ( 1000 m ) gm=163 mS, IDSS=240mA VT=-2V .3 VDS=3V, VGS= mA IDS .4 VGS=-2V3020100 VGS=0 VGS= (mA)IDS0 2 4 6 8 =mWG 100= VDS (V).
4 3 GaAsFET .1 GaAsFET CdgGdCdsRgCgsv1 gmv1 DGi1i2v1v2Rg Lg Rd Ld Cdg LSCds Cgs RS GaAs GaAs GDS 1 ( ) >> ( CgsRg)2 .2 GaAsFET .4 GaAsFET ()()()2211122122gsggsdgdgmdggsgddgdsyCRj CCyjCygjCCRgyGjCC =++= = +=++(1) m 100 m m GaAsFET gm=15 mS, Cgs= pF, Cdg = , Gd= , Rg=16 ( CgsRg)2 = 73 GHz 1 .5 (a) [][][]2112211221221122112 ReReReyyMAGxxyyyyxyy= = YS iS PAV YL YL PAV2 PAV PAV1 Available power Gain, GA PAV PAV1 PAV2 (4) ys 20mSYoutYLYin PAV211`22`YL=Yout*Y`outYLY 11`22`YL=Y`out* GaAs FETGaAs FETisis mSPAV2P AV2P AV2 PAV1< PAV1 PAV1 PAV1 PAV1 mSys 20mS iout.
5 5 2-2 GA (3) (MAG: Maximum Available power Gain) (1) y MAG S (5) ()22112221122112212211221112 SMAGKKSSSSSSSKSS= + = MAG (4),(5) K K K K S21 S12 MSG Maximum Stable Gain GT Transducer power Gain S S21 (6)
6 MSG []21221221221121114Re4 ResAVsoutAVSsoutSiPyiPyyyYyyiiYy== + =+[]22121221112211 ReReSASSyYGyyYyyYy= + + 2(5) (2) .5 21211212 SyMSGSy==(6) (3) (7) 221 GTS=[]()211222211210log110log10 log2 SMSGdBSSS== (8) (5) K Cdg Lext .6 CdgGdCdsRgCgsv1 gmv1 DGZSZLL extdgextCfL20241 =NNNN yyyy2221121122211211yyyy (U: Mason s Unilateral power Gain) U K U U 0 dB MAG 0 dB (fmax : Maximum Oscilation Frequency) U MAG U MAG fmax.
7 7 K 4 GHz MAG MSG K S21 GT MAG S21 GT MAG 3. F S ( .8(a)) .8(b) DC .1 [][][]2221121122122122112212112124 ReReRe122 ReyyUyyyySSSSKSS = =.
8 1110100 Frequency (GHz) power Gain-40-20020401 .6 (9) U, MSG/MAG , S2, S12(dB) factorKMSGMAG221 SfmaxU212S aaMSG/MAG K= (GHz) power Gain-40-20020401 U, MSG/MAG , S2, S12(dB) factorKMSGMAG221 SfmaxU212S aaMSG/MAG .1110100 Frequency (GHz) power Gain-40-20020401 factorKMSGMAG221 SfmaxU212S aaMSG/MAG K=1U, MSG/MAG , S2, S12(dB) .7 K 11y12y21y22y1V2V1I()212111,,,IIVVy()2121 12,,,IIVVy()212121,,,IIVVy()212122,,,IIV Vy1V2V1I2I2I ( ).
9 3 tanh (10) .3 GaAsFET .9 (14) V2=Vds, VT V20 A0,A1,A2,A3 V2 Knee Cgs Cdg Vgs Vdg PN 01234 Voltage (V)Curtice FET Model0102030 Drain Current ( mA )01234 Voltage (V)Curtice FET Model0102030 Drain Current ( mA ) .9 GaAsFET C V ()01 MJJVCVCV = (11) .8 4 CJ0 V M PN.
10 10 .4 G D S ()()()()()230102030200122tanh1dsIAAVAVAV VtVVtVV =+++ = + (10) GaAsFET HEMT (10) tanh (11) M HBT PN CdgGdCdsRgCgs(V1,V2)DGV1V2 Idg(V1,V2)Ids(V1,V2)Igs(V1) 4..11.
