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ワイドバンドギャップ半導体デバイスの基礎 Basics of Wide …
applications. In recent years, there arises a movement of wide bandgap semiconductor to renovate power electronics , ... max =203W P.A.E.=64% Gain=16.9dB g =48mm 10 20 30 40 50 200 400 600 800 1000 0 V ds [V] I ds [mA/mm] V =2V Without stress bias With stress bias V gs =1V V gs =0V V =-1V V =-2V
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アンテナの基礎と高効率平面アンテナの設計 …
apmc-mwe.orgアンテナの基礎と高効率平面アンテナの設計 ―最新ミリ波・マイクロ波アンテナの基礎技術として― Antenna Basics and Design of High Efficiency Planar Antennas
マイクロ波回路とアンテナを融合した 高機能平面アンテナの …
apmc-mwe.orgThe antennas provide RF signal processing functions with a very simple structure. The basic theory of the microwave transmission line is briefly reviewed at the beginning of the lecture. After that, the structure and principle of microwave
FDTD 法入門 Introduction to the FDTD method
apmc-mwe.orgJun Shibayama 法政大学 理工学部 概要 有限差分時間領域(FDTD)法は電磁界問題の数値解法として広範に使用されている．その定式化は極めて 簡素であり，Maxwellの方程式をYee 格子の電磁界配置に基づき差分法を用いて直接離散化して行われ
デジタル変調と信号解析の基礎 単純な信号解析及び図解によ …
apmc-mwe.orgdemodulation for digital wireless communications are . presented. Based on Fourier transform, it is modeled by simple mathematics and illustrated the behavior. Then, by introducing the RC polyphase filter and the Hilbert transform, the relationship between them and the quadrature modulation-demodulation is considered.
ベクトルネットワークアナライザ計測の基礎と応用 Basics …
apmc-mwe.orgVector network analyzer (VNA) has been contributed to research and development as a measurement instrument for high-frequency characteristics of circuits and material parameters. Although the VNA is a ful measurement use instrument, deep knowledge and experience are required master it. In this presentation, we introduce its to
賢いネットワークアナライザに負けない賢い測定の知識
apmc-mwe.orgVector Network Analyzers will be the example of the “smart” instruments in this seminar and you will find an insight and a hint to make your measurements accurate. 図1 ネットワークアナライの内部構成 図2 被測定物（ ...
マイクロ波増幅器の基礎 - apmc-mwe.org
apmc-mwe.orgFor the microwave power amplifier design, the linear circuit theory can be used for estimating the power gain and the oscillation stability analysis. However, the nonlinear circuit analysis including the microwave active devices are necessary for designing ... AlGaN/GaN HEMT, InGaP/GaAs HBTなどで代表 される化合物デバイスや ...
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