AT28C16 16K (2K x 8) Parallel EEPROMs

1 Features Fast Read Access Time - 150 ns Fast Byte Write - 200 s or 1 ms Self-Timed Byte Write Cycle Internal Address and Data Latches Internal Control Timer Automatic Clear Before Write Direct Microprocessor Control DATA POLLING. Low Power 30 mA Active Current 100 A CMOS Standby Current 16K (2K x 8). High Reliability Endurance: 104 or 105 Cycles Parallel Data Retention: 10 Years 5V 10% Supply EEPROMs CMOS & TTL compatible Inputs and Outputs JEDEC Approved Byte Wide Pinout Commercial and Industrial Temperature Ranges AT28C16 .

2 Description The AT28C16 is a low-power, high-performance Electrically Erasable and Program- mable Read Only Memory with easy to use features. The AT28C16 is a 16K memory organized as 2,048 words by 8 bits. The device is manufactured with Atmel's reliable nonvolatile CMOS technology. (continued). Pin Configurations Pin Name Function A0 - A10 Addresses CE Chip Enable OE Output Enable WE Write Enable I/O0 - I/O7 Data Inputs/Outputs NC No Connect DC Don't Connect PLCC PDIP, SOIC. Top View Top View VCC. WE. NC. NC. DC. NC. A7.

3 A7 1 24 VCC. A6 2 23 A8. 4. 3. 2. 1. 32. 31. 30. A6 5 29 A8 A5 3 22 A9. A5 6 28 A9 A4 4 21 WE. A4 7 27 NC A3 5 20 OE. A3 8 26 NC A2 6 19 A10. A2 9 25 OE A1 7 18 CE. A1 10 24 A10 A0 8 17 I/O7. A0 11 23 CE I/O0 9 16 I/O6. NC 12 22 I/O7 I/O1 10 15 I/O5. I/O0 13 21 I/O6 I/O2 11 14 I/O4. 14. 15. 16. 17. 18. 19. 20. GND 12 13 I/O3. I/O1. I/O2. GND. DC. I/O3. I/O4. I/O5. Rev. 0540B 10/98. Note: PLCC package pins 1 and 17. are DON'T CONNECT. 1. The AT28C16 is accessed like a static RAM for the read or The CMOS technology offers fast access times of 150 ns at write cycles without the need of external components.

4 Dur- low power dissipation. When the chip is deselected the ing a byte write, the address and data are latched inter- standby current is less than 100 A. nally, freeing the microprocessor address and data bus for Atmel's 28C16 has additional features to ensure high qual- other operations. Following the initiation of a write cycle, ity and manufacturability. The device utilizes error correc- the device will go to a busy state and automatically clear tion internally for extended endurance and for improved and write the latched data using an internal control timer.

5 Data retention characteristics. An extra 32 bytes of The end of a write cycle can be determined by DATA EEPROM are available for device identification or tracking. POLLING of I/O7. Once the end of a write cycle has been detected, a new access for a read or a write can begin. Block Diagram Absolute Maximum Ratings*. Temperature Under Bias .. -55 C to +125 C *NOTICE: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent dam- Storage Temperature .. -65 C to +150 C age to the device. This is a stress rating only and functional operation of the device at these or any All Input Voltages (including NC Pins) other conditions beyond those indicated in the with Respect to Ground.

6 To + operational sections of this specification is not implied. Exposure to absolute maximum rating All Output Voltages conditions for extended periods may affect with Respect to Ground .. to VCC + device reliability Voltage on OE and A9. with Respect to Ground .. to + 2 AT28C16 . AT28C16 . Device Operation READ: The AT28C16 is accessed like a Static RAM. cycle, an attempted read of the data being written results in When CE and OE are low and WE is high, the data stored the complement of that data for I/O7 (the other outputs are at the memory location determined by the address pins is indeterminate).

7 When the write cycle is finished, true data asserted on the outputs. The outputs are put in a high appears on all outputs. impedance state whenever CE or OE is high. This dual line WRITE PROTECTION: Inadvertent writes to the device control gives designers increased flexibility in preventing are protected against in the following ways: (a) V C C. bus contention. sense if VCC is below (typical) the write function is BYTE WRITE: Writing data into the AT28C16 is similar to inhibited; (b) VCC power on delay once VCC has reached writing into a Static RAM.

8 A low pulse on the WE or CE the device will automatically time out 5 ms (typical). input with OE high and CE or WE low (respectively) ini- before allowing a byte write; and (c) write inhibit holding tiates a byte write. The address location is latched on the any one of OE low, CE high or WE high inhibits byte write last falling edge of WE (or CE); the new data is latched on cycles. the first rising edge. Internally, the device performs a self- CHIP CLEAR: The contents of the entire memory of the clear before write. Once a byte write has been started, it AT28C16 may be set to the high state by the CHIP CLEAR.

9 Will automatically time itself to completion. Once a pro- operation. By setting CE low and OE to 12 volts, the chip is gramming operation has been initiated and for the duration cleared when a 10 msec low pulse is applied to WE. of tWC, a read operation will effectively be a polling opera- D E V I C E I DE NT I F I C A T I O N : A n e x t r a 3 2 b y t e s o f tion. EEPROM memory are available to the user for device iden- FAST BYTE WRITE: The AT28C16E offers a byte write tification. By raising A9 to 12 and using address time of 200 s maximum.

10 This feature allows the entire locations 7E0H to 7 FFH the additional bytes may be written device to be rewritten in seconds. to or read from in the same manner as the regular memory DATA POLLING: The AT28C16 provides DATA POLLING array. to signal the completion of a write cycle. During a write 3. DC and AC Operating Range AT28C16 -15. Operating Com. 0 C - 70 C. Temperature (Case) Ind. -40 C - 85 C. VCC Power Supply 5V 10%. Operating Modes Mode CE OE WE I/O. Read VIL VIL VIH DOUT. (2). Write VIL VIH VIL DIN. (1). Standby/Write Inhibit VIH X X High Z.