AVX | Surface Mount MLCC - Catalog

1 19X7R dielectric General Specifications X7R formulations are called temperature stable ceramics and fall into EIA Class II materials. X7R is the most popular of these intermediate dielectric constant materials. Its temperature variation of capacitance is within 15% from -55 C to +125 C. This capacitance change is non-linear. Capacitance for X7R varies under the influence of electrical operating con-ditions such as voltage and frequency. X7R dielectric chip usage covers the broad spectrum of industrial applications where known changes in capacitance due to applied voltages are acceptable. PART NUMBER (see page 2 for complete part number explanation) 0805 5 C 103 M NOTE: Contact factory for availability of Termination and Tolerance Options for Specific Part Numbers. Contact factory for non-specified capacitance values.

2 042718 A T 2 A Size(L x W )Voltage4V = = 610V = Z16V = Y25V = 350V = 5100V = 1200V = 2500V = 7 DielectricX7R = CCapacitanceCode (In pF)2 Sig. Digits +Number of ZerosCapacitance Tolerance J = 5%* K = 10% M = 20%* 1 F only,contact factory foradditional values Terminations T = Plated Ni and Sn7 = Gold Plated*Z= FLEXITERM **Optional termination**See FLEXITERM X7R sectionFailureRateA = NotApplicablePackaging2 = 7 Reel4 = 13 ReelContactFactory ForMultiplesSpecial Code A = dielectric Specifications and Test Methods 04271820 Parameter/TestX7R Specification LimitsMeasuring ConditionsOperating Temperature Range-55 C to +125 CTemperature Cycle ChamberCapacitanceWithin specified toleranceFreq.: kHz 10% Voltage: .2V For Cap > 10 F, 05 Vrm @ 120 HzDissipation Factor 10% for 50V DC rating for 25V DC rating for 25V and 16V DC rating for 10V DC ratingInsulation Resistance100,000M or 1000M - F,whichever is lessCharge device with rated voltage for 120 5 secs @ room temp/humidityDielectric StrengthNo breakdown or visual defectsCharge device with 250% of rated voltage for 1-5 seconds, w/charge and discharge currentlimited to 50 mA (max)Note: Charge device with 150% of ratedvoltage for 500V toFlexureStressesAppearanceNo defectsDeflection: 2mm Test Time.

3 30 seconds Capacitance Variation 12%Dissipation FactorMeets Initial Values (As Above)InsulationResistance Initial Value x 95% of each terminal should be coveredwith fresh solderDip device in eutectic solder at 230 5 C for secondsResistance toSolder HeatAppearanceNo defects, <25% leaching of either end terminalDip device in eutectic solder at 260 C for 60seconds. Store at room temperature for 24 2hours before measuring electrical Initial Values (As Above)InsulationResistanceMeets Initial Values (As Above) dielectric StrengthMeets Initial Values (As Above)ThermalShockAppearanceNo visual defectsStep 1: -55 C 2 30 3 minutesCapacitanceVariation 2: Room Temp 3 minutesDissipationFactorMeets Initial Values (As Above)Step 3: +125 C 2 30 3 minutesInsulationResistanceMeets Initial Values (As Above)Step 4: Room Temp 3 minutesDielectric StrengthMeets Initial Values (As Above)Repeat for 5 cycles and measure after 24 2 hours at room temperatureLoad LifeAppearanceNo visual defectsCharge device with rated voltage ( 10V) intest chamber set at 125 C 2 C for 1000 hours (+48, -0)If RV > 10V then Life Test voltage will be 2xRV but there are exceptions (please contact AVX for further details on exceptions)Remove from test chamber and stabilize at room temperature for 24 2 hours before measuring.

4 CapacitanceVariation Factor Initial Value x (See Above)InsulationResistance Initial Value x (See Above) dielectric StrengthMeets Initial Values (As Above)LoadHumidityAppearanceNo visual defectsStore in a test chamber set at 85 C 2 C/85% 5% relative humidity for 1000 hours (+48, -0) with rated voltage from chamber and stabilize at room temperature and humidity for 24 2 hours before Factor Initial Value x (See Above)InsulationResistance Initial Value x (See Above) dielectric StrengthMeets Initial Values (As Above)1009175C0G (NP0) DielectricSpecifications and Test MethodsParameter/TestNP0 Specification LimitsMeasuring ConditionsOperating Temperature Range-55 C to +125 CTemperature Cycle ChamberCapacitanceWithin specified toleranceFreq.: MHz 10% for cap 1000 pFQ<30 pF: Q 400+20 x Cap kHz 10% for cap > 1000 pF 30 pF: Q 1000 Voltage.

5 2 VInsulation Resistance100,000M or 1000M - F,Charge device with rated voltage forwhichever is less60 5 secs @ room temp/humidityCharge device with 250% of rated voltage forDielectric StrengthNo breakdown or visual defects1-5 seconds, w/charge and discharge currentlimited to 50 mA (max)Note: Charge device with 150% of ratedvoltage for 500V defectsDeflection: 2mmCapacitanceTest Time: 30 secondsResistance toVariation 5% or .5 pF, whichever is greaterFlexureQMeets Initial Values (As Above)StressesInsulation Initial Value x 95% of each terminal should be coveredDip device in eutectic solder at 230 5 Cwith fresh solderfor secondsAppearanceNo defects, <25% leaching of either end terminalCapacitanceVariation or .25 pF, whichever is greaterDip device in eutectic solder at 260 C for 60 QMeets Initial Values (As Above)seconds. Store at room temperature for 24 2 Resistance tohours before measuring electrical HeatInsulationMeets Initial Values (As Above)ResistanceDielectric Meets Initial Values (As Above)StrengthAppearanceNo visual defectsStep 1: -55 C 2 30 3 minutesCapacitanceVariation or.

6 25 pF, whichever is greaterStep 2: Room Temp 3 minutesQMeets Initial Values (As Above)Step 3: +125 C 2 30 3 minutesThermalShockInsulationMeets Initial Values (As Above)Step 4: Room Temp 3 minutesResistanceDielectric Meets Initial Values (As Above)Repeat for 5 cycles and measure afterStrength24 hours at room temperatureAppearanceNo visual defectsCapacitanceVariation or .3 pF, whichever is greaterCharge device with twice rated voltage in 30 pF:Q 350test chamber set at 125 C 2 CLoad LifeQ 10 pF, <30 pF:Q 275 +5C/2for 1000 hours (+48, -0).(C=Nominal Cap)<10 pF:Q 200 +10 CInsulation Initial Value x (See Above)Remove from test chamber and stabilize atResistanceroom temperature for 24 hoursDielectric Meets Initial Values (As Above)before visual defectsCapacitanceVariation or .5 pF, whichever is greaterStore in a test chamber set at 85 C 2 C/ 30 pF:Q 35085% 5% relative humidity for 1000 hoursLoadQ 10 pF, <30 pF:Q 275 +5C/2(+48, -0) with rated voltage <10 pF:Q 200 +10 CInsulation Initial Value x (See Above)Remove from chamber and stabilize atResistanceroom temperature for 24 2 hoursDielectric Meets Initial Values (As Above)before SIZES ARE SHADED NOTE.

7 Contact factory for non-specified capacitance values *EIA 01005 **Contact Factory for Specifications SIZE0101*02010402060308051206 SolderingReflow OnlyReflow OnlyReflow/WaveReflow/WaveReflow/WaveRef low/WavePackagingPaper/EmbossedAll PaperAll PaperAll PaperPaper/EmbossedPaper/Embossed(L) ( ) ( ) ( ) ( ) ( ) ( )(in)(W) ( ) ( ) ( ) ( ) ( ) ( )(in)(t) ( ) ( ) ( ) ( ) ( ) ( )(in) 100101 BAAAAACCCGGG(pF) 150151 BAAAAACCCGGG 220221 BAAAAACCCGGG EEEEEEE 330331 BAAAAACCCGGGJJJJJJK 470471 BAAAAACCCGGGJJJJJJK 680681 BAAAACCCGGGJJJJJJ K 1000102 BAAAACCCCGGGGJJJJJJJJK 1500152 BAAAACCCCGGGJJJJJJJJJJJJJJM2200222 BAAAACCCCGGGJJJJJJJJJJJJJJM 3300332 AAAACCCCGGGJJJJJJJJJJJJJJM 4700472 AAAACCCCGGGJJJJJJJJJJJJJJM 6800682 AAAACCCCGGGJJJJJJJJJJJJJJPCap ( F) **QQQQQ** 10106 PPPQQXX 22226 QQQ 47476QQ ( )( )( )( )( )( )( )( )( )( )( )( )( )( )PAPEREMBOSSEDX7R DielectricCapacitance Range02251922X7R DielectricCapacitance RangePREFERRED SIZES ARE SHADED ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( )PAPEREMBOSSEDSIZE12101812182522202225 SolderingReflow OnlyReflow OnlyReflow OnlyReflow OnlyReflow OnlyPackagingPaper/EmbossedAll EmbossedAll EmbossedAll EmbossedAll Embossed(L) ( ) ( )

8 ( ) ( ) ( )(in.)(W) ( ) ( ) ( ) ( ) ( )(in.)(t) ( ) ( ) ( ) ( ) ( )(in.)WVDC101625501002005001625501002005 005010020025 5010020050050 100 200 Cap 100 101(pF) 150151220 221 330331 470471 680681 1000102 1500152 JJJJJJM 2200222 JJJJJJM 3300332 JJJJJJM 4700472 JJJJJJM 6800682 JJJJJJMCap ( F) 10106 ZZZZZZZ 22226 ZZZZ 47476Z 100107 WVDC101625501002005001625501002005005010 0200255010020050050100200 SIZE12101812182522202225101618 NOTE: Contact factory for non-specified capacitance values