BT137-600 4Q Triac

1 BT137-600 . B. 0A. -22. TO. 4Q Triac Rev. 5 25 March 2011 Product data sheet 1. Product profile General description Planar passivated four quadrant Triac in a SOT78 plastic package intended for use in general purpose bidirectional switching and phase control applications. Features and benefits High blocking voltage capability Planar passivated for voltage Less sensitive gate for improved noise ruggedness and reliability immunity Triggering in all four quadrants Applications General purpose motor control General purpose switching Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDRM repetitive peak - - 600 V. off-state voltage ITSM non-repetitive full sine wave; Tj(init) = 25 C; - - 65 A. peak on-state tp = 20 ms; see Figure 4;. current see Figure 5. IT(RMS) RMS on-state full sine wave; Tmb 102 C; - - 8 A. current see Figure 1; see Figure 2;. see Figure 3. Static characteristics IGT gate trigger VD = 12 V; IT = A; T2+ G+; - 5 35 mA.

2 Current Tj = 25 C; see Figure 7. VD = 12 V; IT = A; T2+ G-; - 8 35 mA. Tj = 25 C; see Figure 7. VD = 12 V; IT = A; T2- G-; - 11 35 mA. Tj = 25 C; see Figure 7. VD = 12 V; IT = A; T2- G+; - 30 70 mA. Tj = 25 C; see Figure 7. NXP Semiconductors BT137-600 . 4Q Triac 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 T1 main terminal 1. mb 2 T2 main terminal 2 T2 T1. G. 3 G gate sym051. mb T2 mounting base;. main terminal 2. 1 2 3. SOT78 (TO-220AB). 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BT137-600 TO-220AB plastic single-ended package; heatsink mounted; 1 mounting SOT78. hole; 3-lead TO-220AB. BT137-600 All information provided in this document is subject to legal disclaimers. NXP 2011. All rights reserved. Product data sheet Rev. 5 25 March 2011 2 of 13. NXP Semiconductors BT137-600 . 4Q Triac 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).

3 Symbol Parameter Conditions Min Max Unit VDRM repetitive peak off-state voltage - 600 V. IT(RMS) RMS on-state current full sine wave; Tmb 102 C; - 8 A. see Figure 1; see Figure 2; see Figure 3. ITSM non-repetitive peak on-state full sine wave; Tj(init) = 25 C; - 65 A. current tp = 20 ms; see Figure 4; see Figure 5. full sine wave; Tj(init) = 25 C; - 71 A. tp = ms; see Figure 4; see Figure 5. I2t I2t for fusing tp = 10 ms; sine-wave pulse - 21 A2s dIT/dt rate of rise of on-state current IT = 12 A; IG = A; dIG/dt = A/ s; - 50 A/ s T2+ G+. IT = 12 A; IG = A; dIG/dt = A/ s; - 50 A/ s T2+ G- IT = 12 A; IG = A; dIG/dt = A/ s; - 50 A/ s T2- G- IT = 12 A; IG = A; dIG/dt = A/ s; - 10 A/ s T2- G+. IGM peak gate current - 2 A. VGM peak gate voltage - 5 V. PGM peak gate power - 5 W. PG(AV) average gate power over any 20 ms period - W. Tstg storage temperature -40 150 C. Tj junction temperature - 125 C. 003aae689 003aae692. 10 25. IT(RMS) IT(RMS). (A) (A). 8 20. 6 15. 4 10. 2 5. 0 0.

4 50 0 50 100 150 10 2 10 1 1 10. Tmb ( C) surge duration (s). f = 50 Hz Tmb 102 C. Fig 1. RMS on-state current as a function of mounting Fig 2. RMS on-state current as a function of surge base temperature; maximum values duration; maximum values BT137-600 All information provided in this document is subject to legal disclaimers. NXP 2011. All rights reserved. Product data sheet Rev. 5 25 March 2011 3 of 13. NXP Semiconductors BT137-600 . 4Q Triac 003aae690. 12. conduction form = 180 . angle factor Ptot (degrees) a 120 . (W) 30 4. 60 90 .. 8 90 60 . 120 180 30 . 4. 0. 0 2 4 6 8 10. IT(RMS) (A). Fig 3. Total power dissipation as a function of RMS on-state current; maximum values 003aae691. 103. ITSM IT ITSM. (A). t tp Tj(init) = 25 C max 102. (1). (2). 10. 10 5 10 4 10 3 10 2 10 1. tp (s). tp 20 ms (1) dIT/dt limit (2) T2- G+ quadrant limit Fig 4. Non-repetitive peak on-state current as a function of pulse width; maximum values BT137-600 All information provided in this document is subject to legal disclaimers.

5 NXP 2011. All rights reserved. Product data sheet Rev. 5 25 March 2011 4 of 13. NXP Semiconductors BT137-600 . 4Q Triac 003aae693. 80. ITSM. (A). 60. 40. IT ITSM. 20. t 1/f Tj(init) = 25 C max 0. 1 10 102 103 104. number of cycles f = 50 Hz Fig 5. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum values 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-mb) thermal resistance from half cycle; see Figure 6 - - K/W. junction to mounting base full cycle; see Figure 6 - - 2 K/W. Rth(j-a) thermal resistance from in free air - 60 - K/W. junction to ambient 003aae698. 10. Zth(j-mb). (K/W). 1. unidirectional bidirectional 10-1. 10-2. 10-5 10-4 10-3 10-2 10-1 1 10. tp (s). Fig 6. Transient thermal impedance from junction to mounting base as a function of pulse width BT137-600 All information provided in this document is subject to legal disclaimers. NXP 2011. All rights reserved.

6 Product data sheet Rev. 5 25 March 2011 5 of 13. NXP Semiconductors BT137-600 . 4Q Triac 6. Characteristics Table 6. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics IGT gate trigger current VD = 12 V; IT = A; T2+ G+; - 5 35 mA. Tj = 25 C; see Figure 7. VD = 12 V; IT = A; T2+ G-; - 8 35 mA. Tj = 25 C; see Figure 7. VD = 12 V; IT = A; T2- G-; - 11 35 mA. Tj = 25 C; see Figure 7. VD = 12 V; IT = A; T2- G+; - 30 70 mA. Tj = 25 C; see Figure 7. IL latching current VD = 12 V; IG = A; T2+ G+; - 7 30 mA. Tj = 25 C; see Figure 8. VD = 12 V; IG = A; T2+ G-; - 16 45 mA. Tj = 25 C; see Figure 8. VD = 12 V; IG = A; T2- G-; - 5 30 mA. Tj = 25 C; see Figure 8. VD = 12 V; IG = A; T2- G+; - 7 45 mA. Tj = 25 C; see Figure 8. IH holding current VD = 12 V; Tj = 25 C; see Figure 9 - 5 20 mA. VT on-state voltage IT = 10 A; Tj = 25 C; see Figure 10 - V. VGT gate trigger voltage VD = 12 V; IT = A; Tj = 25 C; - V. see Figure 11. VD = 400 V; IT = A; Tj = 125 C; - V.

7 See Figure 11. ID off-state current VD = 600 V; Tj = 125 C - mA. Dynamic characteristics dVD/dt rate of rise of off-state VDM = 402 V; Tj = 125 C; exponential 100 250 - V/ s voltage waveform; gate open circuit dVcom/dt rate of change of VD = 400 V; Tj = 95 C; - 20 - V/ s commutating voltage dIcom/dt = A/ms; IT = 8 A; gate open circuit tgt gate-controlled turn-on ITM = 12 A; VD = 600 V; IG = mA; - 2 - s time dIG/dt = 5 A/ s BT137-600 All information provided in this document is subject to legal disclaimers. NXP 2011. All rights reserved. Product data sheet Rev. 5 25 March 2011 6 of 13. NXP Semiconductors BT137-600 . 4Q Triac 003aae695 003aae697. 3 3. IGT IL. IGT (25 C) IL(25 C). (1). (2). 2 2. (3). (4). (1). (2). (3). 1 1. (4). 0 0. 60 10 40 90 140 60 10 40 90 140. Tj ( C) Tj ( C). (1) T2- G+. (2) T2- G- (3) T2+ G- (4) T2+ G+. Fig 7. Normalized gate trigger current as a function of Fig 8. Normalized latching current as a function of junction temperature junction temperature 003aae699 003aae696.

8 30. IH. IH(25 C) IT. (A). 20. 10. (1) (2) (3). 0 0. 60 10 40 90 140 0 1 2 3. Tj ( C) VT (V). Vo = V. Rs = . (1) Tj = 125 C; typical values (2) Tj = 125 C; maximum values (3) Tj = 25 C; maximum values Fig 9. Normalized holding current as a function of Fig 10. On-state current as a function of on-state junction temperature voltage BT137-600 All information provided in this document is subject to legal disclaimers. NXP 2011. All rights reserved. Product data sheet Rev. 5 25 March 2011 7 of 13. NXP Semiconductors BT137-600 . 4Q Triac 003aae694. VGT. VGT (25 C). 0. 60 10 40 90 140. Tj ( C). Fig 11. Normalized gate trigger voltage as a function of junction temperature BT137-600 All information provided in this document is subject to legal disclaimers. NXP 2011. All rights reserved. Product data sheet Rev. 5 25 March 2011 8 of 13. NXP Semiconductors BT137-600 . 4Q Triac 7. Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78. E A.

9 P A1. q mounting D1 base D. L1(1) L2(1). Q. b1(2). L (3 ). b2(2). (2 ). 1 2 3. b(3 ) c e e 0 5 10 mm scale DIMENSIONS (mm are the original dimensions). L2(1). UNIT A A1 b b1(2) b2(2) c D D1 E e L L1(1) p q Q. max. mm Notes 1. Lead shoulder designs may vary. 2. Dimension includes excess dambar. OUTLINE REFERENCES EUROPEAN. ISSUE DATE. VERSION IEC JEDEC JEITA PROJECTION. 08-04-23. SOT78 3-lead TO-220AB SC-46. 08-06-13. Fig 12. Package outline SOT78 (TO-220AB). BT137-600 All information provided in this document is subject to legal disclaimers. NXP 2011. All rights reserved. Product data sheet Rev. 5 25 March 2011 9 of 13. NXP Semiconductors BT137-600 . 4Q Triac 8. Revision history Table 7. Revision history Document ID Release date Data sheet status Change notice Supersedes BT137-600 20110325 Product data sheet - BT137-600 Modifications: Various changes to content. BT137-600 20100831 Product data sheet - BT137_SERIES BT137-600 All information provided in this document is subject to legal disclaimers.

10 NXP 2011. All rights reserved. Product data sheet Rev. 5 25 March 2011 10 of 13. NXP Semiconductors BT137-600 . 4Q Triac 9. Legal information Data sheet status Document status [1] [2] Product status [3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term 'short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL Definitions Suitability for use NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or Draft The document is a draft version only.