BT137-800G0T - Mouser Electronics

1 BT137-800G0T . 4Q Triac - 11 July 2018 Product data sheet 1. General description Planar passivated four quadrant triac in a SOT78 (TO-220AB) plastic package intended for use in general purpose bidirectional switching and phase control applications. It is used in applications where "high junction operating temperature capability" is required, the maximum rated junction temperature is 150 C. 2. Features and benefits High blocking voltage capability Least sensitive gate for highest noise immunity High junction operating temperature capability High minimum IGT for guaranteed immunity to gate noise Planar passivated for voltage ruggedness and reliability Triggering in all four quadrants 3. Applications Applications subject to high temperature General purpose motor controls Lighting controls Applications where only positive gate drive is avaliable Applications where gate noise or interference may occur 4.

2 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDRM repetitive peak off-state - - 800 V. voltage IT(RMS) RMS on-state current full sine wave; Tmb 127 C; - - 8 A. Fig. 1; Fig. 2; Fig. 3. Tj junction temperature - - 150 C. ITSM non-repetitive peak on- full sine wave; Tj(init) = 25 C; - - 65 A. state current tp = 20 ms; Fig. 4; Fig. 5. Symbol Parameter Conditions Min Typ Max Unit Static characteristics IGT gate trigger current VD = 12 V; IT = A; T2+ G+; 10 - 50 mA. Tj = 25 C; Fig. 7. VD = 12 V; IT = A; T2+ G-; 10 - 50 mA. Tj = 25 C; Fig. 7. VD = 12 V; IT = A; T2- G-; 10 - 50 mA. Tj = 25 C; Fig. 7. VD = 12 V; IT = A; T2- G-; 10 - 100 mA. Tj = 25 C; Fig. 7. Dynamic characteristics dVD/dt rate of rise of off-state VDM = 536 V; Tj = 150 C; (VDM = 67% 200 - - V/ s voltage of VDRM); exponential waveform; gate open circuit WeEn Semiconductors BT137-800G0T .

3 4Q Triac 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 T1 main terminal 1 mb 2 T2 main terminal 2. T2 T1. 3 G gate G. sym051. mb T2 mounting base; main terminal 2. 1 2 3. 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BTA137-800G0T TO-220AB plastic single-ended package; heatsink mounted; SOT78. 1 mounting hole; 3-lead TO-220AB. BT137-800G0T All information provided in this document is subject to legal disclaimers. WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 11 July 2018 2 / 13. WeEn Semiconductors BT137-800G0T . 4Q Triac 7. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDRM repetitive peak off-state - 800 V.

4 Voltage IT(RMS) RMS on-state current full sine wave; Tmb 127 C; - 8 A. Fig. 1; Fig. 2; Fig. 3. ITSM non-repetitive peak on-state full sine wave; Tj(init) = 25 C; - 65 A. current tp = 20 ms; Fig 4; Fig 5. full sine wave; Tj(init) = 25 C; - 71 A. tp = ms I2t I2t for fusing tp = 10 ms; sine-wave pulse - 21 A2s dIT/dt rate of rise of on-state IG = A; T2+ G+ - 50 A/ s current IG = A; T2+ G- 50 A/ s IG = A; T2- G- 50 A/ s IG = A; T2- G+ 10 A/ s IGM peak gate current - 2 A. PGM peak gate power - 5 W. PG(AV) average gate power over any 20 ms period - W. Tstg storage temperature -40 150 C. Tj junction temperature - 150 C. Fig. 1. RMS on-state current as a function of mounting f = 50 Hz; Tmb 127 C. base temperature; maximum values Fig. 2. RMS on-state current as a function of surge duration; maximum values BT137-800G0T All information provided in this document is subject to legal disclaimers.

5 WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 11 July 2018 3 / 13. WeEn Semiconductors BT137-800G0T . 4Q Triac = conduction angle a = form factor = IT(RMS) / IT(AV). Fig. 3. Total power dissipation as a function of RMS on-state current; maximum values tp 20 ms (1) dIT/dt limit (2) T2- G+ quadrant limit Fig. 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum values BT137-800G0T All information provided in this document is subject to legal disclaimers. WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 11 July 2018 4 / 13. WeEn Semiconductors BT137-800G0T . 4Q Triac f = 50 Hz Fig. 5. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum values BT137-800G0T All information provided in this document is subject to legal disclaimers.

6 WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 11 July 2018 5 / 13. WeEn Semiconductors BT137-800G0T . 4Q Triac 8. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-mb) thermal resistance full cycle; Fig. 6 - - 2 K/W. from junction to half cycle; Fig. 6 - - K/W. mounting base Rth(j-a) thermal resistance in free air - 60 - K/W. from junction to ambient Fig. 6. Transient thermal impedance from junction to mounting base as a function of pulse width BT137-800G0T All information provided in this document is subject to legal disclaimers. WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 11 July 2018 6 / 13. WeEn Semiconductors BT137-800G0T . 4Q Triac 9. Characteristics Table 6. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics IGT gate trigger current VD = 12 V; IT = A; T2+ G+; 10 - 50 mA.

7 Tj = 25 C; Fig. 7. VD = 12 V; IT = A; T2+ G-; 10 - 50 mA. Tj = 25 C; Fig. 7. VD = 12 V; IT = A; T2- G-; 10 - 50 mA. Tj = 25 C; Fig. 7. VD = 12 V; IT = A; T2- G+; 10 - 100 mA. Tj = 25 C; Fig. 7. IL latching current VD = 12 V; IG = A; T2+ G+; - - 45 mA. Tj = 25 C; Fig. 8. VD = 12 V; IG = A; T2+ G-; - - 60 mA. Tj = 25 C; Fig. 8. VD = 12 V; IG = A; T2- G-; - - 45 mA. Tj = 25 C; Fig. 8. VD = 12 V; IG = A; T2- G+; - - 60 mA. Tj = 25 C; Fig. 8. IH holding current VD = 12 V; Tj = 25 C; Fig. 9 - - 40 mA. VT on-state voltage IT = 10 A; Tj = 25 C; Fig. 10 - V. VGT gate trigger voltage VD = 12 V; IT = A;Tj = 25 C; Fig. 11 - 1 V. VD = 400V; IT = A;Tj = 150 C; Fig. 11 - V. ID off-state current VD = 800 V; Tj = 150 C - 2 mA. Dynamic characteristics dVD/dt rate of rise of off-state VDM = 536 V; Tj = 150 C; (VDM = 67% 200 - - V/ s voltage of VDRM); exponential waveform; gate open circuit dVcom/dt rate of change of VD = 400 V; Tj = 150 C; dIcom/dt = A/ 10 - - V/ s commutating voltage ms; IT = 8 A; gate open circuit tgt gate-controlled turn-on ITM = 12 A; VD = 800 V; IG = A; - 2 - s time dIG/dt = 5 A/ s BT137-800G0T All information provided in this document is subject to legal disclaimers.

8 WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 11 July 2018 7 / 13. WeEn Semiconductors BT137-800G0T . 4Q Triac (1) T2- G+ Fig. 8. Normalized latching current as a function of (2) T2- G- junction temperature (3) T2+ G- (4) T2+ G+. Fig. 7. Normalized gate trigger current as a function of junction temperature Fig. 9. Normalized holding current as a function of Vo = V; Rs = . junction temperature (1) Tj = 150 C; typical values (2) Tj = 150 C; maximum values (3) Tj = 25 C; maximum values Fig. 10. On-state current as a function of on-state voltage BT137-800G0T All information provided in this document is subject to legal disclaimers. WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 11 July 2018 8 / 13. WeEn Semiconductors BT137-800G0T . 4Q Triac Fig. 11. Normalized gate trigger voltage as a function of junction temperature BT137-800G0T All information provided in this document is subject to legal disclaimers.

9 WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 11 July 2018 9 / 13. WeEn Semiconductors BT137-800G0T . 4Q Triac 10. Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78. E A. p A1. q mounting D1 base D. L1(1) L2(1). Q. b1(2). L (3 ). b2(2). (2 ). 1 2 3. b(3 ) c e e 0 5 10 mm scale DIMENSIONS (mm are the original dimensions). L2(1). UNIT A A1 b b1(2) b2(2) c D D1 E e L L1(1) p q Q. max. mm Notes 1. Lead shoulder designs may vary. 2. Dimension includes excess dambar. OUTLINE REFERENCES EUROPEAN. ISSUE DATE. VERSION IEC JEDEC JEITA PROJECTION. 08-04-23. SOT78 3-lead TO-220AB SC-46. 08-06-13. BT137-800G0T All information provided in this document is subject to legal disclaimers. WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 11 July 2018 10 / 13. WeEn Semiconductors BT137-800G0T .

10 4Q Triac Right to make changes WeEn Semiconductors reserves the right to make changes to information published in this document, including without 11. Legal information limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Data sheet status Suitability for use WeEn Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure Document Product Definition or malfunction of an WeEn Semiconductors product can reasonably status [1][2] status [3] be expected to result in personal injury, death or severe property or environmental damage. WeEn Semiconductors and its suppliers accept no Objective Development This document contains data from liability for inclusion and/or use of WeEn Semiconductors products in such [short] data the objective specification for product equipment or applications and therefore such inclusion and/or use is at the sheet development.