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Chapter 5 The Field-Effect Transistor - McGraw Hill

(Substrate bias) Oxide Channel Source Drain Gate p-type v GS v DS t ox + n+ L W (a) n % 6 ’˛ ˇ 7( ˆ 4 ˇ ... 1 = 30 k Ω 2 = 20 kΩ + – V DS ...

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Transcription of Chapter 5 The Field-Effect Transistor - McGraw Hill

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