Complementary Low-Threshold MOSFET Pair

1 vishay SiliconixSi1555DL Document Number: 71079S13-0631-Rev. F, document is subject to change without PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT technical questions, contact: Low-Threshold MOSFET PairFEATURES TrenchFET Power MOSFET Material categorization:For definitions of compliance please :a. Surface mounted on 1" x 1" FR4 board. PRODUCT SUMMARY VDS (V)RDS(on) ( )ID (A) at VGS = at VGS = at VGS = - V - at VGS = - V - at VGS = - V - Information: Si1555DL-T1-GE3 (Lead (Pb)-free and Halogen-free)Marking CodeRB XXLot Traceabilityand Date CodePart # CodeYYSOT-363SC-70 (6-LEADS)641235 Top ViewS1G1D2D1G2S2 ABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted) ParameterSymbol N-Channel P-ChannelUnit 5 s Steady State 5 s Steady State Drain-Source VoltageVDS20- 8 VGate-Source Voltage VGS 12 8 Continuous Drain Current (TJ = 150 C)aTA = 25 CID = 85 C Drain CurrentIDM 1 Continuous Source Current (Diode Conduction)

2 Power DissipationaTA = 25 = 85 Junction and Storage Temperature Range TJ, Tstg- 55 to 150 CTHERMAL RESISTANCE RATINGS ParameterSymbol TypicalMaximumUnit Maximum Junction-to-Ambientat 5 sRthJA360415 C/WSteady State400460 Maximum Junction-to-Foot (Drain)Steady StateRthJF300350 vishay Number: 71079S13-0631-Rev. F, 25-Mar-13 This document is subject to change without PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT technical questions, contact: Pulse test; pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device.

3 These are stress ratings only, and functional operationof the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximumrating conditions for extended periods may affect device (TJ = 25 C, unless otherwise noted) ParameterSymbol Test StaticGate Threshold VoltageVGS(th) VDS = VGS, ID = 250 A = VGS, ID = - 250 A P-Ch- 1 Gate-Body LeakageIGSSVDS = 0 V, VGS = 12 V N-Ch 100nAVDS = 0 V, VGS = 8 V P-Ch 100 Zero Gate Voltage Drain CurrentIDSSVDS = 20 V, VGS = 0 V N-Ch1 AVDS = - 8 V, VGS = 0 VP-Ch- 1 VDS = 20 V, VGS = 0 V, TJ = 85 C N-Ch5 VDS = - 8 V, VGS = 0 V, TJ = 85 C P-Ch- 5On-State Drain CurrentaID(on) VDS 5 V, VGS = V N-Ch1 AVDS - 5 V, VGS = - V P-Ch- 1 Drain-Source On-State ResistanceaRDS(on)

4 VGS = V, ID = VGS = - V, ID = - A = V, ID = A = - V, ID = - A = - V, ID = - Transconductanceagfs VDS = 10 V, ID = A = - 4 V, ID = - A Forward VoltageaVSDIS = A, VGS = 0 V = - A, VGS = 0 V P-Ch- Gate ChargeQg N-ChannelVDS = 10 V, VGS = V, ID = AP-ChannelVDS = - 4 V, VGS = - V, ID = - ChargeQgs ChargeQgd r n - O n D e l a y T i m etd(on) N-ChannelVDD = 10 V, RL = 20 ID A, VGEN = V, Rg = 6 P-ChannelVDD = - 4 V, RL = 8 ID - A, VGEN = - V, Rg = 6 N-Ch1020nsP-Ch612 Rise TimetrN-Ch1630P-Ch2550 Turn-Off Delay Timetd(off) N-Ch1020P-Ch1020 Fall TimetfN-Ch1020P-Ch1020 Source-Drain Reverse Recovery TimetrrIF = A, dI/dt = 100 A/ sN-Ch2040IF = - A, dI/dt = 100 A/ sP-Ch2040 vishay SiliconixSi1555 DLDocument Number: 71079S13-0631-Rev.

5 F, document is subject to change without PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT technical questions, contact: TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) Output CharacteristicsOn-Resistance vs. Drain CurrentGate V1 VVDS - Drain-to-Source Voltage (V)ID - Drain Current (A)VGS = 5 V thru = VVGS = VRDS(on) - On-Resistance ( )ID - Drain Current (A) = 10 VID = AVGS - Gate-to-Source Voltage (V)Qg - Total Gate Charge (nC)Transfer CharacteristicsCapacitance On-Resistance vs. Junction = 125 C- 55 C25 CVGS - Gate-to-Source Voltage (V)ID - Drain Current (A)020406080100048121620 CrssCossCissVDS - Drain-to-Source Voltage (V)C - Capacitance (pF) 50- 250255075100125150 VGS = VID = ARDS(on) - On-Resistance(Normalized)TJ - Junction Temperature ( C) vishay Number: 71079S13-0631-Rev.

6 F, 25-Mar-13 This document is subject to change without PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT technical questions, contact: TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) Source-Drain Diode Forward Voltage Threshold = 25 CVSD - Source-to-Drain Voltage (V)IS - Source Current (A)TJ = 150 C- 50- 250255075100125150ID = 250 A TJ - Junction Temperature ( C)VGS(th) Variance (V) On-Resistance vs. Gate-to-Source VoltageSingle Pulse = AVGS - Gate-to-Source Voltage (V)RDS(on) - On-Resistance ( )03512411006001010-310-210-1 Power (W)Time (s)Normalized Thermal Transient Impedance, PulseDuty Cycle = Duty Cycle, D =2. Per Unit Base = RthJA = 400 C/W3.

7 TJM TA = PDMZthJA(t)t1t2t1t2 Notes:4. Surface MountedPDM10-410-310-210-1 Square Wave Pulse Duration (s)Normalized Effective TransientThermal ImpedanceVishay SiliconixSi1555 DLDocument Number: 71079S13-0631-Rev. F, document is subject to change without PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT technical questions, contact: TYPICAL CHARACTERISTICS (25 C, unless otherwise noted)P-CHANNEL TYPICAL CHARACTERISTICS (25 C, unless otherwise noted)Normalized Thermal Transient Impedance, PulseDuty Cycle = Wave Pulse Duration (s)Normalized Effective TransientThermal ImpedanceOutput Characteristics On-Resistance vs. Drain V1 VVGS = 5 V thru VVDS - Drain-to-Source Voltage (V)ID - Drain Current (A) = VVGS = VVGS = VRDS(on) - On-Resistance ( )ID - Drain Current (A)Transfer CVGS - Gate-to-Source Voltage (V)ID - Drain Current (A)125 CTC = - 55 C0408012016002468 CrssCossCissVDS - Drain-to-Source Voltage (V)C - Capacitance (pF) vishay Number: 71079S13-0631-Rev.

8 F, 25-Mar-13 This document is subject to change without PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT technical questions, contact: TYPICAL CHARACTERISTICS (25 C, unless otherwise noted)Gate Charge Source-Drain Diode Forward Voltage Threshold = 4 VID = AVGS - Gate-to-Source Voltage (V)Qg - Total Gate Charge (nC) = 150 CTJ = 25 CVSD - Source-to-Drain Voltage (V)IS - Source Current (A)- 50- 250255075100125150ID = 250 A TJ - Junction Temperature ( C)VGS(th) Variance (V) On-Resistance vs. Junction TemperatureOn-Resistance vs. Gate-to-Source VoltageSingle Pulse 50- 250255075100125150 VGS = VID = ARDS(on) - On-Resistance(Normalized)TJ - Junction Temperature ( C) = AVGS - Gate-to-Source Voltage (V)RDS(on) - On-Resistance ( )03512410100600110-310-210-1 Power (W)Time (s) vishay SiliconixSi1555 DLDocument Number: 71079S13-0631-Rev.

9 F, document is subject to change without PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT technical questions, contact: TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for SiliconTechnology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, andreliability data, see Thermal Transient Impedance, PulseDuty Cycle = Duty Cycle, D =2. Per Unit Base = RthJA = 400 C/W3. TJM- TA = PDMZthJA(t)t1t2t1t2 Notes:4.

10 Surface MountedPDM10-410-310-210-1 Square Wave Pulse Duration (s)Normalized Effective TransientThermal ImpedanceNormalized Thermal Transient Impedance, PulseDuty Cycle = Wave Pulse Duration (s)Normalized Effective TransientThermal ImpedanceLegal Disclaimer Revision: 08-Feb-171 Document Number: 91000 Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product.