CPC COOPERATIVE PATENT CLASSIFICATION H …

1 H01 LCPCCOOPERATIVE PATENT CLASSIFICATIONHELECTRICITY(NOTE omitted)H01 BASIC electric ELEMENTS(NOTE omitted)H01 LSEMICONDUCTOR devices ; electric solid STATE devices NOTOTHERWISE PROVIDED FOR (use of semiconductor devices for measuring G01;resistors in general H01C; magnets, inductors, transformers H01F; capacitors in general H01G;electrolytic devices H01G 9/00; batteries, accumulators H01M; waveguides, resonators, or linesof the waveguide type H01P; line connectors, current collectors H01R; stimulated-emissiondevices H01S; electromechanical resonators H03H; loudspeakers, microphones, gramophonepick-ups or like acoustic electromechanical transducers H04R; electric light sources in generalH05B; printed circuits, hybrid circuits, casings or constructional details of electrical apparatus,manufacture of assemblages of electrical components H05K; use of semiconductor devices incircuits having a particular application, see the subclass for the application) subclass covers: electric solid state devices which are not covered by any other subclass and details thereof, and includes: semiconductordevices adapted for rectifying, amplifying, oscillating or switching; semiconductor devices sensitive to radiation; electricsolid state devices using thermoelectric, superconductive, piezo- electric , electrostrictive, magnetostrictive, galvano-magnetic or bulk negative resistance effects and integrated circuit devices ; photoresistors, magnetic field dependent resistors, field effect resistors, capacitors with potential-jump barrier, resistorswith potential-jump barrier or surface barrier, incoherent light emitting diodes and thin-film or thick-film circuits.

2 Processes and apparatus adapted for the manufacture or treatment of such devices , except where such processes relate tosingle-step processes for which provision exists this subclass, the following terms or expressions are used with the meaning indicated: "wafer" means a slice of semiconductor or crystalline substrate material, which can be modified by impurity diffusion(doping), ion implantation or epitaxy, and whose active surface can be processed into arrays of discrete components orintegrated circuits; " solid state body" means the body of material within which, or at the surface of which, the physical effects characteristic ofthe device occur. In thermoelectric devices , it includes all materials in the current path. Regions in or on the body of the device (other than the solid state body itself), which exert an influence on the solid statebody electrically, are considered to be "electrodes" whether or not an external electrical connection is made thereto.

3 Anelectrode may include several portions and the term includes metallic regions which exert influence on the solid state bodythrough an insulating region ( capacitive coupling) and inductive coupling arrangements to the body. The dielectricregion in a capacitive arrangement is regarded as part of the electrode. In arrangements including several portions, onlythose portions which exert an influence on the solid state body by virtue of their shape, size, or disposition or the materialof which they are formed are considered to be part of the electrode. The other portions are considered to be "arrangementsfor conducting electric current to or from the solid state body" or "interconnections between solid state components formedin or on a common substrate", i .e. leads; "device" means an electric circuit element; where an electric circuit element is one of a plurality of elements formed in oron a common substrate it is referred to as a "component"; "complete device" is a device in its fully assembled state which may or may not require further treatment, , before it is ready for use but which does not require the addition of further structural units; "parts" includes all structural units which are included in a complete device; "container" is an enclosure forming part of the complete device and is essentially a solid construction in which the body ofthe device is placed, or which is formed around the body without forming an intimate layer thereon.

4 An enclosure whichconsists of one or more layers formed on the body and in intimate contact therewith is referred to as an "encapsulation"; "integrated circuit" is a device where all components, diodes, resistors, are built up on a common substrate and formthe device including interconnections between the components; "assembly" of a device is the building up of the device from its component constructional units and includes the provisionof fillings in this subclass, both the process or apparatus for the manufacture or treatment of a device and the device itself are classified,whenever both of these are described sufficiently to be of - (continued) is drawn to Note (3) after the title of section C, which Note indicates to which version of the periodic table ofchemical elements the IPC refers. In this subclass, the Periodic System used is the 8 group system indicated by Romannumerals in the Periodic Table following IPC groups are not in the CPC scheme.

5 The subject matter for these IPC groups is classified in the followingCPC groups:H01L 21/301covered byH01L 21/30H01L 21/328covered byH01L 29/66075H01L 21/329covered byH01L 29/66083H01L 21/33covered byH01L 29/66227H01L 21/331covered byH01L 29/66234H01L 21/332covered byH01L 29/66363H01L 21/334covered byH01L 29/66075H01L 21/335covered byH01L 29/66409H01L 21/336covered byH01L 29/66477H01L 21/337covered byH01L 29/66893H01L 21/338covered byH01L 29/66848H01L 21/339covered byH01L 29/66946H01L 21/36-H01L 21/368covered byH01L 21/02107H01L 21/58covered byH01L 24/80H01L 21/60covered byH01L 21/50, H01L 2021/60H01L 21/66covered byH01L 22/00H01L 21/603covered byH01L 21/50, H01L 2021/603H01L 21/607covered byH01L 21/50, H01L 2021/607H01L 21/8242covered byH01L 27/108H01L 21/8244covered byH01L 27/11H01L 21/8246covered byH01L 27/112H01L 21/98covered byH01L 25/50H01L 29/38covered byH01L 29/04-H01L 29/365H01L 29/96covered byH01L 29/68-H01L 29/945H01L 51/30covered byH01L 51/0032H01L 51/40covered byH01L 51/0001H01L 51/46covered byH01L 51/0032H01L 51/48covered byH01L 51/0001H01L 51/54covered byH01L 51 this subclass non-limiting references (in the sense of paragraph 39 of the Guide to the IPC) may still be displayed in thescheme.

6 21/00 Processes or apparatus adapted for themanufacture or treatment of semiconductor orsolid state devices or of parts thereof ({testingor measuring during manufacture or treatment, orreliability measurements H01L 22/00; multistepmanufacturing processes for passive two-terminalcomponents without a potential-jump or surfacebarrier for integrated circuits H01L 28/00; }processes or apparatus peculiar to the manufactureor treatment of devices provided for in groupsH01L 31/00 - H01L 51/00 or of parts thereof, seethese groups; single-step processes covered by othersubclasses, see the relevant subclasses, C23C,C30B; photomechanical production of textured orpatterned surfaces, materials or originals therefor,apparatus specially adapted therefor, in general G03F) 21/02 .Manufacture or treatment of semiconductor devicesor of parts thereof 21/02002 ..{Preparing wafers} group covers processes for manufacturingwafers prior to the fabrication of any device, between the sawing of ingots (covered byB28D) and the cleaning of substrates (coveredby H01L 21/02041 ).

7 Group does not cover: simple use of grinding or polishingmachines B24B thermal smoothening H01L 21/324 21/02005 ..{Preparing bulk and homogeneous wafers} 21/02008 ..{Multistep processes} 21/0201 ..{Specific process step} 21/02013 ..{Grinding, lapping} 21/02016 ..{Backside treatment} 21/02019 ..{Chemical etching} 21/02021 ..{Edge treatment, chamfering} 21/02024 ..{Mirror polishing} 21/02027 ..{Setting crystal orientation} 21/0203 ..{Making porous regions on the surface} 21/02032 ..{by reclaiming or re-processing} 21/02035 ..{Shaping} 21/02041 ..{Cleaning} 21/02043 ..{Cleaning before device manufacture, process} 21/02046 ..{Dry cleaning only (H01L 21/02085 takesprecedence)} 21/02049 ..{with gaseous HF} 21/02052 ..{Wet cleaning only (H01L 21/02085 takesprecedence)}CPC - 21/02054.

8 {combining dry and wet cleaning steps(H01L 21/02085 takes precedence)} 21/02057 ..{Cleaning during device manufacture} 21/0206 ..{during, before or after processing ofinsulating layers} 21/02063 ..{the processing being the formation of viasor contact holes} 21/02065 ..{the processing being a planarization ofinsulating layers} 21/02068 ..{during, before or after processing ofconductive layers, polysilicon oramorphous silicon layers} 21/02071 ..{the processing being a delineation, , of conductive layers} 21/02074 ..{the processing being a planarization ofconductive layers} 21/02076 ..{Cleaning after the substrates have beensingulated} 21/02079 ..{Cleaning for reclaiming} 21/02082 ..{product to be cleaned} 21/02085 ..{Cleaning of diamond} 21/02087 ..{Cleaning of wafer edges} 21/0209 ..{Cleaning of wafer backside} 21/02093.

9 {Cleaning of porous materials} 21/02096 ..{only mechanical cleaning} 21/02098 ..{only involving lasers, laser ablation} 21/02101 ..{only involving supercritical fluids} 21/02104 ..{Forming layers (deposition in general C23C;crystal growth in general C30B)}WARNINGG roups H01L 21/02104 H01L 21/02694are incomplete pending reclassificationof documents from groups H01L 21/06,H01L 21/16, and H01L 21/20. Groups H01L 21/02104 H01L 21/02694,H01L 21/06, H01L 21/20,and H01L 21/16should be considered in order to perform acomplete search. 21/02107 ..{Forming insulating materials on a substrate}WARNINGG roups H01L 21/02107 H01L 21/02326are incomplete pending reclassificationof documents from groups H01L 21/312,H01L 21/314, H01L 21/316, andH01L 21/318. Groups H01L 21/02107 H01L 21/02326,H01L 21/312, H01L 21/314, H01L 21/316,and H01L 21/318 should be considered inorder to perform a complete search.

10 21/02109 ..{characterised by the type of layer, typeof material, porous/non-porous, pre-cursors,mixtures or laminates} 21/02112 ..{characterised by the material of the layer}NOTEL ayers comprising sublayers, multi-layers, are additionallyclassified in H01L 21/022; porouslayers are additionally classified inH01L 21/02203 21/02115 ..{the material being carbon, alpha-C,diamond or hydrogen doped carbon} 21/02118 ..{carbon based polymeric organic orinorganic material, polyimides, polycyclobutene or PVC (polymers per seC08G, photoresist per se G03F)} 21/0212 ..{the material being fluoro carboncompounds, (CFx) n, (CHxFy) nor polytetrafluoroethylene} 21/02123 ..{the material containing silicon} 21/02126 ..{the material containing Si, O, and atleast one of H, N, C, F, or other non-metal elements, SiOC, SiOC:H orSiONC} 21/02129 ..{the material being boron orphosphorus doped silicon oxides, BPSG, BSG or PSG}NOTEH alogen, fluorine,containing BPSG, PSG, BSG,and the like, are additionallyclassified in H01L 21/02131 21/02131.