Datasheet - sanrise tech

1 Datasheet 230m , 700V, Super Junction N-Channel Power MOSFET SRC70R230 Sep. 2016, sanrise Technology Limited Company General Description The sanrise SRC70R230 is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power density and outstanding efficiency.

2 The SRC70R230 break down voltage is 700V and it has a high rugged avalanche characteristics. The SRC70R230 is available in TO-220F, TO-220C and TO-247 packages. Features Ultra Low RDS(ON) = 230m @ VGS = 10V. Ultra Low Gate Charge, Qg=38nC typ. Fast switching capability Robust design with better EAS performance EMI Improved Application UPS, Inverter, etc Solar TV Power High Power AC/DC Power Supply Symbol Figure 1 Symbol of SRC70R230 Package Type TO-220F TO-220C TO-247 Figure 2 Package Types of SRC70R230 Ordering Information SRC70R230 Circuit Type E: Lead Free G.

3 Green Package Blank: Tube TF: TO-220F TR: Tape & Reel TC: TO-220C T: TO-247 Package Part Number Marking ID Packing Type Lead Free Green Lead Free Green TO-220F SRC70R230TF-E SRC70R230TF-G SRC70R230 TFE SRC70R230 TFG Tube TO-220C SRC70R230TC-E SRC70R230TC-G SRC70R230 TCE SRC70R230 TCG Tube TO-247 SRC70R230T-E SRC70R230T-G SRC70R230TE SRC70R230TG Tube Datasheet 230m , 700V, Super Junction N-Channel Power MOSFET SRC70R230 Sep.

4 2016, sanrise Technology Limited Company Absolute Maximum Ratings Parameter Symbol Rating Unit Drain-Source Voltage VDSS 730 V Gate-Source Voltage VGSS 30 V Continuous Drain Current TC=25 C ID A TC=125 C Pulsed Drain Current (Note 2) IDM 55 A Avalanche Energy, Single Pulse (Note 3) EAS 500 mJ Avalanche Energy, Repetitive (Note 2) EAR mJ Avalanche Current, Repetitive (Note 2) IAR A Continuous Diode Forward Current IS A Diode Pulse Current 55 A Operating Junction Temperature TJ 150 C Storage Temperature TSTG -55 to 150 C Lead Temperature (Soldering, 10 sec) TLEAD 300 C Note: 1.

5 Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature 3. IAS = , VDD = 60V, RG = 25 , Starting TJ = 25 C Datasheet 230m , 700V, Super Junction N-Channel Power MOSFET SRC70R230 Sep. 2016, sanrise Technology Limited Company Electrical Characteristics TJ = 25 C, unless otherwise specified.

6 Parameter Symbol Test Conditions Min Typ Max Unit Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250uA 700 V Zero Gate Voltage Drain Current IDSS VDS=700V, VGS=0V 1 uA Gate-Body Leakage Current Forward IGSSF VGS=30V, VDS=0V 100 nA Reverse IGSSR VGS=-30V, VDS=0V uA Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250uA V Static Drain-Source On-Resistance RDS(ON) VGS=10V, ID= 200 230 m Gate Resistance RG f=1 MHz, Open Drain Dynamic Characteristics Input Capacitance CISS VDS=50V, VGS=0V, f=1 MHz 1650 pF Output Capacitance COSS 170 Reverse Transfer Capacitance CRSS 18 Effective output capacitance, energy related NOTE4 CO(er) VGS=0V, VDS= 88 pF Effective output capacitance, time related NOTE5 CO(tr) 263 Turn-on Delay Time td(on) VDD=400V, ID= RG= , VGS=10V 11 ns Rise Time tr 10 Turn-off Delay Time td(off)

7 76 Fall Time tf 8 Gate Charge Characteristics Gate to Source Charge Qgs VDD=480V, ID= VGS=0 to 10V nC Gate to Drain Charge Qgd Gate Charge Total Qg 38 Gate Plateau Voltage Vplateau V Reverse Diode Characteristics Drain-Source Diode Forward Voltage VSD VGS=0V, ISD= V Reverse Recovery Time trr VR=400V, IF= dIF/dt= 330 ns Reverse Recovery Charge Qrr uC Peak Reverse Recovery Current Irrm 27 A Note: 4. CO(er) is a fixed capacitance that gives the same stored energy as COSS while VDS is rising from 0 to 480V 5. CO (tr) is a fixed capacitance that gives the same charging time as COSS while VDS is rising from 0 to 480 V Datasheet 230m , 700V, Super Junction N-Channel Power MOSFET SRC70R230 Sep.

8 2016, sanrise Technology Limited Company Typical Performance Characteristics Figure 1: Power Dissipation Figure 2: Max. Transient Thermal Impedance Ptot = f(Tc) Z(thJC) = f(tp); parameter: D = tp/T Figure 3: Safe Operating Area Figure 4: Safe Operating Area ID = f(VDS); Tc= 25 C; VGS>7V; parameter tp ID = f(VDS); Tc= 80 C; VGS>7V; parameter tp TO-247 TO-247 Datasheet 230m , 700V, Super Junction N-Channel Power MOSFET SRC70R230 Sep.

9 2016, sanrise Technology Limited Company Figure 5: Typ. Output Characteristics Figure 6: Typ. Output Characteristics ID = f(VDS); Tj= 25 C; parameter: VGS ID = f(VDS); Tj= 125 C; parameter: VGS Figure 7: Typ. Drain-Source On-State Resistance Figure 8: Typ. Drain-Source On-State Resistance RDS(ON) =f(ID); Tj=125 C; parameter: VGS RDS(ON)=f(Tj); ID=8A; VGS=10V Datasheet 230m , 700V, Super Junction N-Channel Power MOSFET SRC70R230 Sep.

10 2016, sanrise Technology Limited Company Figure 9: Typ. Transfer Characteristics Figure 10: Typ. Gate Charge ID = f(VGS); VDS = 20V VGS= f(Qgate ), ID= 8A pulsed Figure 11: Drain-Source Breakdown Voltage Figure 12: Forward Characteristics of Reverse Diode VBR(DSS)=f(Tj); ID=1mA IF=f(VSD); parameter: Tj Datasheet 230m , 700V, Super Junction N-Channel Power MOSFET SRC70R230 Sep. 2016, sanrise Technology Limited Company Figure 13: Avalanche Energy Figure 14: Typ.