Datasheet - sanrise tech

1 Datasheet 480m , 650v , Super Junction N-Channel Power MOSFET SRC65R480E. General Description Symbol The sanrise SRC65R480E is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power density and outstanding efficiency. The SRC65R480E break down voltage is 650v Figure 1 Symbol of SRC65R480E. and it has a high rugged avalanche characteristics. The SRC65R480E is available in TO-252 and Package Type TO-220F packages. Features Ultra Low RDS(ON) = 480m @ VGS = 10V. Ultra Low Gate Charge, Qg= typ. Fast switching capability TO-252 TO-220F. Robust design with better EAS performance EMI Improved Design (SnowMOSTM ) Figure 2 Package Types of SRC65R480E. Application TV Power High Performance Charger / Adapter LED Lighting Power Ordering Information SRC65R480E.

2 Circuit Type E: Lead Free G: Green Package Blank: Tube D: TO-252 TR: Tape & Reel TF: TO-220F. Part Number Marking ID. Package Packing Type Lead Free Green Lead Free Green TO-252 SRC65R480 EDTR-E SRC65R480 EDTR-G SRC65R480 EDE SRC65R480 EDG Tape & Reel TO-220F SRC65R480 ETF-E SRC65R480 ETF-G SRC65R480 ETFE SRC65R480 ETFG Tube Apr. 2017, sanrise Technology Limited Company Datasheet 480m , 650v , Super Junction N-Channel Power MOSFET SRC65R480E. Absolute Maximum Ratings Parameter Symbol Rating Unit Drain-Source Voltage VDSS 680 V. Gate-Source Voltage VGSS 30 V. TC=25 C Continuous Drain Current ID A. TC=125 C Pulsed Drain Current (Note 2) IDM A. Avalanche Energy, Single Pulse (Note 3) EAS 108 mJ. Avalanche Energy, Repetitive (Note 2) EAR mJ. Avalanche Current, Repetitive (Note 2) IAR A. Continuous Diode Forward Current IS A. Diode Pulse Current A. Operating Junction Temperature TJ 150 C.

3 Storage Temperature TSTG -55 to 150 C. Lead Temperature (Soldering, 10 sec) TLEAD 300 C. Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature 3. IAS = , VDD = 60V, RG = 25 , Starting TJ = 25 C. Apr. 2017, sanrise Technology Limited Company Datasheet 480m , 650v , Super Junction N-Channel Power MOSFET SRC65R480E. Electrical Characteristics TJ = 25 , unless otherwise specified. Parameter Symbol Test Conditions Min Typ Max Unit Statistic Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250uA 650 V. Zero Gate Voltage Drain Current IDSS VDS= 650v , VGS=0V 1 uA. Forward IGSSF VGS=30V, VDS=0V 100. Gate-Body Leakage Current nA.

4 Reverse IGSSR VGS=-30V, VDS=0V -100. Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250uA V. Static Drain-Source On-Resistance RDS(ON) VGS=10V, ID= 390 480 m . Gate Resistance RG f=1 MHz, Open Drain . Dynamic Characteristics Input Capacitance CISS 356. VDS=50V, VGS=0V, Output Capacitance COSS pF. f=1 MHz Reverse Transfer Capacitance CRSS Effective output capacitance, energy CO(er) 17. related NOTE5 VGS=0V, pF. Effective output capacitance, time VDS=0 480V. CO(tr) 79. related NOTE6. Turn-on Delay Time td(on) 10. Rise Time tr VDD=400V, ID= 12. ns Turn-off Delay Time td(off) RG=10 , VGS=10V 36. Fall Time tf 14. Gate Charge Characteristics Gate to Source Charge Qgs Gate to Drain Charge Qgd VDD=480V, ID= nC. Gate Charge Total Qg VGS=0 to 10V Gate Plateau Voltage Vplateau V. Reverse Diode Characteristics Drain-Source Diode Forward Voltage VSD VGS=0V, ISD= V.

5 Reverse Recovery Time trr 206 ns VR=400V, IF= Reverse Recovery Charge Qrr uC. dIF/dt=100A/us Peak Reverse Recovery Current Irrm A. Note: 5. CO(er) is a fixed capacitance that gives the same stored energy as COSS while VDS is rising from 0 to 480V. 6. CO (tr) is a fixed capacitance that gives the same charging time as COSS while VDS is rising from 0 to 480 V. Apr. 2017, sanrise Technology Limited Company Datasheet 480m , 650v , Super Junction N-Channel Power MOSFET SRC65R480E. Typical Performance Characteristics Figure 1: Power Dissipation Figure 2: Max. Transient Thermal Impedance Ptot = f(Tc) Z(thJC) = f(tp); parameter: D = tp/T. Figure 3: Safe Operating Area Figure 4: Safe Operating Area ID = f(VDS); Tc= 25 C; VGS>7V; parameter tp ID = f(VDS); Tc= 80 C; VGS>7V; parameter tp Apr. 2017, sanrise Technology Limited Company Datasheet 480m , 650v , Super Junction N-Channel Power MOSFET SRC65R480E.

6 Figure 5: Typ. Output Characteristics Figure 6: Typ. Output Characteristics ID = f(VDS); Tj= 25 C; parameter: VGS ID = f(VDS); Tj= 125 C; parameter: VGS. Figure 7: Typ. Drain-Source On-State Resistance Figure 8: Typ. Drain-Source On-State Resistance RDS(ON) =f(ID); Tj=125 C; parameter: VGS RDS(ON)=f(Tj); ID= ; VGS=10V. Apr. 2017, sanrise Technology Limited Company Datasheet 480m , 650v , Super Junction N-Channel Power MOSFET SRC65R480E. Figure 9: Typ. Transfer Characteristics Figure 10: Typ. Gate Charge ID = f(VGS); VDS = 20V VGS= f(Qgate ), ID= pulsed Figure 11: Drain-Source Breakdown Voltage Figure 12: Forward Characteristics of Reverse Diode VBR(DSS)=f(Tj); ID=1mA IF=f(VSD); parameter: Tj Apr. 2017, sanrise Technology Limited Company Datasheet 480m , 650v , Super Junction N-Channel Power MOSFET SRC65R480E. Figure 13: Avalanche Energy Figure 14: Typ.

7 Capacitances EAS=f(Tj); ID= ; VDD=60V C=f(VDS); VGS=0; f=1 MHz Figure 15: COSS Stored Energy EOSS=f(VDS). Apr. 2017, sanrise Technology Limited Company Datasheet 480m , 650v , Super Junction N-Channel Power MOSFET SRC65R480E. Test Circuits 1. Gate Charge Test Circuit & Waveform 2. Switch Time Test Circuit 3. Unclaimed Inductive Switching Test Circuit & Waveforms Apr. 2017, sanrise Technology Limited Company Datasheet 480m , 650v , Super Junction N-Channel Power MOSFET SRC65R480E. 4. Test Circuit and Waveform for Diode Characteristics Apr. 2017, sanrise Technology Limited Company Datasheet 480m , 650v , Super Junction N-Channel Power MOSFET SRC65R480E. Mechanical Dimensions TO-252 Unit: mm Dimensions(mm). Symbol Min. Typ. Max. A A1 0 - A2 b b1 - b2 c - D D1 - - E E1 - - e (BSC). H L L1 - - L2 - - L3 - L4 - - L5 - - L6 - - 0 - 8 . Apr. 2017, sanrise Technology Limited Company Datasheet 480m , 650v , Super Junction N-Channel Power MOSFET SRC65R480E.

8 Mechanical Dimensions (Continued). TO-220F Unit: mm Dimensions(mm). Symbol Min. Typ. Max. A A1 A2 - - A3 b - b1 - - c D - D1 - - E E1 - - e (BSC). H - - (H1) - ( ) - L L1 - - P1 - - Q Apr. 2017, sanrise Technology Limited Company Datasheet 480m , 650v , Super Junction N-Channel Power MOSFET SRC65R480E. sanrise Technology Limited Company IMPORTANT NOTICE. sanrise Technology Limited Company reserves the right to make changes without further notice to any products or specifications herein. sanrise Technology Limited Company does not assume any responsibility for use of any its products for any particular purpose, nor does sanrise Technology Limited Company assume any liability arising out of the application or use of any its products or circuits. sanrise Technology Limited Company does not convey any license under its patent rights or other rights nor the rights of others.

9 Main Site: - Headquarter - Shanghai Office sanrise Technology Limited Company sanrise Technology Limited Company ~603, Building B, SDG Information Port, , No. 1159, Cailun Road, Zhangjiang HiTech Park, Kefeng Road, Science & Technology Park, Nanshan District, Pudong District, Shanghai, China ShenZhen, China Tel: +86-755-22953335 Tel: +86-21-51355061. Fax: +86-755-22916878. Apr. 2017, sanrise Technology Limited Company