DDR4 SDRAM UDIMM - Micron Technology

1 ddr4 SDRAM UDIMMMTA18 ASF2G72AZ 16 GBFeatures ddr4 functionality and operations supported asdefined in the component data sheet 288-pin, unbuffered dual in-line memory module( UDIMM ) Fast data transfer rates: PC4-3200, PC4-2666, orPC4-2400 16GB (2 Gig x 72) VDD = (NOM) VPP = (NOM) VDDSPD = (NOM) Supports ECC error detection and correction Nominal and dynamic on-die termination (ODT) fordata, strobe, and mask signals Low-power auto self refresh (LPASR) Data bus inversion (DBI) for data bus On-die VREFDQ generation and calibration Dual-rank On-board I2C temperature sensor with integratedserial presence-detect (SPD)

2 EEPROM 4 internal device bank groups with 4 banks pergroup produce 16 device banks Fixed burst chop (BC) of 4 and burst length (BL) of 8via the mode register set (MRS) Selectable BC4 or BL8 on-the-fly (OTF) Gold edge contacts Halogen-free Fly-by topology Terminated control, command, and address busFigure 1: 288-Pin UDIMM (R/C-E1)Module height: ( )OptionsMarking Operating temperature Commercial(0 C TOPER 95 C)None Package 288-pin DIMM (halogen-free)Z Frequency/CAS latency @ CL = 22 ( ddr4 -3200)-3G2 @ CL = 19 ( ddr4 -2666)-2G6 @ CL = 17 ( ddr4 -2400)-2G3 Table 1.

3 Key Timing ParametersSpeedGradePC4-Data Rate (MT/s)CL =tRCDnstRPnstRCns24222120\1918\1716\1514 \1312\1110\9-3G232003200,29333200,293329 332666\26662400\24002133\21331866\186616 00\16001333\ 293329332666\26662400\24002133\21331866\ 18661600\16001333\ ( ) ( ) ( )116GB (x72, ECC, DR) 288-Pin ddr4 UDIMMF eaturesPDF: Rev. G 05/2021 EN1 Micron Technology , Inc. reserves the right to change products or specifications without notice. 2015 Micron Technology , Inc. All rights and specifications discussed herein are subject to change by Micron without 1: Key Timing Parameters (Continued)SpeedGradePC4-Data Rate (MT/s)CL =tRCDnstRPnstRCns24222120\1918\1716\1514 \1312\1110\9-2G62666 2666\26662400\24002133\21331866\18661600 \16001333\ ( ) ( ) ( )1-2G32400 2400\24002133\21331866\18661600\16001333 \ ( ) ( ) ( )1-2G12133 2133\21331866\18661600\16001333\ ( ) ( ) ( )1 Note:1.

4 Down-bin timing, refer to component datasheet Speed Bin Tables for 2: AddressingParameter16 GBRow address64K A[15:0]Column address1K A[9:0]Device bank group address4 BG[1:0]Device bank address per group4 BA[1:0]Device configuration8Gb (1 Gig x 8), 16 banksModule rank address2 CS_n[1:0]Table 3: Part Numbers and Timing Parameters 16GB ModulesBase device: MT40A1G8,1 8Gb ddr4 SDRAMPart Number2 ModuleDensityConfigurationModuleBandwidt hMemory Clock/Data RateClock Cycles(CL-nRCD-nRP)MTA18 ASF2G72AZ-3G2__16GB2 Gig x Gig x MT/s19-19-19 MTA18 ASF2G72AZ-2G3__16GB2 Gig x MT/s17-17-17 Notes:1.

5 The data sheet for the base device can be found at All part numbers end with a two-place code (not shown) that designates component and PCB factory for current revision codes. Example: (x72, ECC, DR) 288-Pin ddr4 UDIMMF eaturesPDF: Rev. G 05/2021 EN2 Micron Technology , Inc. reserves the right to change products or specifications without notice. 2015 Micron Technology , Inc. All rights Notes and WarningsMicron Technology , Inc. (" Micron ") reserves the right to make changes to information published in this document,including without limitation specifications and product descriptions.

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10 In no event shall Micron be liable for any indirect, incidental, punitive, special or consequentialdamages (including without limitation lost profits, lost savings, business interruption, costs related to the removalor replacement of any products or rework charges) whether or not such damages are based on tort, warranty,breach of contract or other legal theory, unless explicitly stated in a written agreement executed by Micron 's dulyauthorized (x72, ECC, DR) 288-Pin ddr4 UDIMMF eaturesPDF: Rev. G 05/2021 EN3 Micron Technology , Inc. reserves the right to change products or specifications without notice.