DS21946A JP

1 2006 Microchip Technology 1TC4421A/TC4422A : 10A (typ.) : 18V : 2A (max.) :- 4,700 pF 15 ns- 47,000 pF 135 ns : 42 ns (typ.) :- 1 130 A (typ.)- 0 33 A (typ.) : (typ.) : 5V TC4420/TC4429 TC4421/TC4422 MOSFET 8 DFN MOSFET IGBT ON/OFF TC4421A/TC4422A MOSFET TC4421/TC4422 MOSFET (IGBT) TC4421A/TC4422A TC4421A/TC4422A 5V 1A 4kV TC4421A/TC4422A TTL CMOS (3V 18V)

2 300 mV TC4421A/TC4422A 9A MOSFET (1)8 1234 VDD5678 OUTPUTGNDVDDINPUTNCGNDOUTPUTTC4421 ATC4422A5-Pin TO-220 VDDGNDINPUTGNDOUTPUTTC4421 ATC4422A VDD 1: 2: DFN TC4421A TC4422 AVDDOUTPUTGNDOUTPUTPDIP/SOIC8 DFN(2)VDDINPUTNCGND23456781TC4421 ATC4422 AVDDOUTPUTGNDOUTPUTTC4421A TC4422 AVDDOUTPUTGNDOUTPUT9A MOSFET TC4421A/TC4422 ADS21946A_JP-page 2 2006 Microchip Technology Inc. GNDVDD300 mV = 25 pF TC4422A 130 A 2006 Microchip Technology 3TC4421A/TC4422A 1 ..+20V .. (VDD + ) (GND 5V) (VIN > VDD)..50 mA : DC : TA = +25 C VDD 18V MinTypMax 1 High V 0 Low VIL IIN 10 +10 A0V VIN VDD VIN 5 VDD High VOHVDD VDC Low VOL HighROH = 10 mA VDD = 18V LowROL = 10 mA VDD = 18V IPK AVDD = 18V IDC2 A10V VDD 18V TA = +25 C(TO220 DFN ) ( 2) IREV > A 2% t 300 sec ( 1) tR 2834ns 4-1 CL = 10,000 pF tF 2632ns 4-1 CL = 10,000 pF tD1 3845ns 4-1 CL = 10,000 pF tD2 4249ns 4-1 CL = 10,000 pF IS 130250 AVIN = 3V 35100 AVIN = 0V 18V 1: 2.

3 TC4421A/TC4422 ADS21946A_JP-page 4 2006 Microchip Technology ( ) : VDD 18V. MinTypMax 1 High V 0 Low VIL IIN 10 +10 A0V VIN VDD High VOHVDD VDC Low VOL HighROH = 10 mA VDD = 18V LowROL = 10 mA VDD = 18V ( 1) tR 3845ns 4-1 CL = 10,000 pF tF 3340ns 4-1 CL = 10,000 pF tD1 4-1 CL = 10,000 pF tD2 5360ns 4-1 CL = 10,000 pF IS 200500 AVIN = 3V 50150 AVIN = 0V 18V 1: : VDD 18V MinTypMax (V)TA 40 +125 C TJ +150 C TA 65 +150 C 5 TO-220qJA 71 C/W 8 6x5 DFNqJA C/W 4 8 PDIPqJA 125 C/W 8 SOICqJA 155 C/W 2006 Microchip Technology 5TC4421A/TC4422A 2 : TA = +25 C VDD 18V 2-1: 2-2: 2-3.

4 2-4: 2-5: 2-6: : 0204060801001201401601804 6 8 1012141618 (V) (ns)22,000 pF10,000 pF1,000 pF100 pF050100150200250300100100010000100000 (pF) (ns)5V10V15V0204060801001201401601804 6 8 1012141618 (V) (ns)22,000 pF10,000 pF1,000 pF100 pF050100150200250300100100010000100000 (pF) (ns)5V15V10V2025303540455055-40 -25 -10520 35 50 65 80 95 110 125 ( C) (ns)tRISEtFALLVDD = 15V1E-91E-81E-74 6 8 1012141618 (V) (A sec)10-710-810-9TC4421A/TC4422 ADS21946A_JP-page 6 2006 Microchip Technology Inc. : TA = +25 C VDD 18V 2-7: 2-8: 2-9: 2-10: 2-11: 2-12: 30354045505560657075804 6 8 1012141618 (V) (nS)tD2tD1 CLOAD = 10,000 pF40455055606570752345678910 (V) (ns)tD1tD2 VDD = 12V30354045505560-40 -25 -10520 35 50 65 80 95 110 125 ( C) (ns)tD2tD1 VDD = 12 VVIN = 5 VCLOAD = 10,000 pF204060801001201404 6 8 1012141618 (V)IQUIESCENT ( A) = High = Low20406080100120140160180200220-40 -25 -10 520 35 50 65 80 95 110 125 ( C)IQUIESCENT ( A) = Low = HighVDD = -25 -10 520 35 50 65 80 95 110 125 ( C) (V)VIHVILVDD = 12V 2006 Microchip Technology 7TC4421A/TC4422A : TA = +25 C VDD 18V 2-13: 2-14: High 2-15.

5 Low 2-16: (VDD = 18V) 2-17: (VDD = 12V) 2-18: (VDD = 6V) 6 8 1012141618 (V) (V) 6 8 10 12141618 (V)ROUT-HI ( )TJ = 25 CTJ = 150 CVIN = 5V (TC4422A)V= 0V (TC4421A) 6 8 101214 1618 (V)ROUT-LO ( )TJ = 25 CTJ = 150 CVIN = 0V (TC4422A)V5V (TC4421A)0204060801001201401601801001,00 010,000100,000 (pF) (mA)2 MHz1 MHz200 kHz100 kHz50 kHz10 kHzVDD = 18V0204060801001201401601802001001,00010 ,000100,000 (pF) (mA)2 MHz1 MHz200 kHz100 kHz50 kHz10 kHzVDD = 12V0204060801001201401601802002201001,00 010,000100,000 (pF) (mA)2 MHz1 MHz200 kHz100 kHz50 kHz10 kHzVDD = 6 VTC4421A/TC4422 ADS21946A_JP-page 8 2006 Microchip Technology Inc. : TA = +25 C VDD 18V 2-19: (VDD = 18V) 2-20: (VDD = 12V) 2-21: (VDD = 6V)0204060801001201401601801010010001000 0 (kHz) (mA)VDD = 18V470 pF1000 pF10,000 pF22,000 pF47,000 F020406080100120140160180200101001000100 00 (kHz) (mA)470 pF1000 pF10,000 pF22,000 pF47,000 FVDD = 12V0204060801001201401601802002201010010 0010000 (kHz) (mA)470 pF1000 pF10,000 pF22,000 pF47,000 FVDD = 6V 2006 Microchip Technology 9TC4421A/TC4422A 3 3-1 3-1 (VDD)

6 VDD MOSFET 18V VDD GND 1 F MOSFET TTL/CMOS high low 300 mV CMOS MOSFET CMOS MOSFET 6x5 DFN (PCB) TO-220 VDD 8 PDIP SOIC 8 DFN 5 TO-220 11 VDD 18V221 INPUT TTL/CMOS 33 NC 442 GND 554 GND 665 OUTPUTCMOS 77 OUTPUTCMOS 883 VDD 18V PAD NC TABVDD VDD TC4421A/TC4422 ADS21946A_JP-page 10 2006 Microchip Technology Inc.

7 4 4-1: tD1tFtRtD2 : 100 kHz tRISE = tFALL 10 nsec tD1tFtRtD2+5V10%90%10%90%10%90%+18V0V90% 10%10%10%90%+5V+18V0V0V0V90%2675418CL = 10,000 F VDD = 18V FTC4421 ATC4422A : DFN PDIP SOIC VDDVDDI nputGNDGNDO utputOutput 2006 Microchip Technology 11TC4421A/TC4422A 5 XXXXXXXXXXXXXNNNYYWW8 PDIP (300 mil) :TC4421 APA ^ 25605145 TO-220 XXXXXXXXXXXXXXXXXXYYWWNNN :TC4421 AXXXXXXXXX0514256 VAT^^ Y ( )YY ( )WW (1 1 01 )NNN (Sn) JEDEC * JEDEC ( ) : 3e3e8 DFN :TC4421 AVMF^05142568 SOIC (150 mil) :XXXXXXXXXXXXYYWWNNNTC4421 ASN05142563e3e3e3eXXXXXXXXXXXXXXXXYYWWNN NTC4421A/TC4422 ADS21946A_JP-page 12 2006 Microchip Technology Plastic Transistor Outline (AT) (TO-220)LH1 QEbe1eC1J1 FADa(5X) PEJECTOR PINe3 Drawing No.

8 C04-036 Notes:Dimensions D and E1 do not include mold flash or protrusions. Mold flash orprotrusions shall not exceed .010" ( ) per equivalent: TO-220*Controlling ParameterMold Draft AngleLead WidthLead LimitsOverall HeightLead LengthOverall WidthLead *. 7 3 7 Overall Lead Hole to Bottom of Hole Between 2006 Microchip Technology 13TC4421A/TC4422A8 Plastic Dual Flat No Lead Package (MF) 6x5 mm Body (DFN-S) Saw SingulatedTC4421A/TC4422 ADS21946A_JP-page 14 2006 Microchip Technology Plastic Dual In-line (PA) 300 mil (PDIP)B1BA1 ALA2p EeB cE1nD12 * MINNOMMAXMINNOMMAX n88 5101551015 5101551015* :D E1 JEDEC : MS-001 Drawing No. ( ) 2006 Microchip Technology 15TC4421A/TC4422A8 Plastic Small Outline (OA) Narrow 150 mil (SOIC) 0480481512015120 1512015120 88n MAXNOMMINMAXNOMMIN * 21 DnpBEE1hL c45 A2 AA1* :D E1.

9 010 ( ) JEDEC : MS-012 Drawing No. C04-057 TC4421A/TC4422 ADS21946A_JP-page 16 2006 Microchip Technology Inc. : 2006 Microchip Technology 17TC4421A/TC4422A A: A (2005 5 ) TC4421A/TC4422 ADS21946A_JP-page 18 2006 Microchip Technology Inc. : 2006 Microchip Technology 19TC4421A/TC4422A :TC4421A: 9A High-Speed MOSFET Driver, InvertingTC4422A: 9A High-Speed MOSFET Driver, Non-Inverting :V= -40 C +125 C : *AT= TO-220, 5 MF= Dual, Flat, No (6x5 mm Body), 8 MF713 = Dual, Flat, No (6x5 mm Body), 8 ( )PA= Plastic DIP (300 mil Body), 8 OA= Plastic SOIC (150 mil Body), 8 OA713 = Plastic SOIC (150 mil Body), 8 ( )* Pb ( ).PART :a)TC4421 AVAT:9A MOSFET Driver,TO-220 , -40 C +125 )TC4421 AVOA: 9A MOSFET Driver,SOIC ,-40 C +125 )TC4421 AVMF: 9A MOSFET Driver,DFN ,-40 C +125 )TC4422 AVPA: 9A MOSFET Driver,PDIP ,-40 C +125 )TC4422 AVOA: 9A MOSFET Driver,SOIC ,-40 C +125 )TC4422 AVMF: 9A MOSFET Driver, DFN ,-40 C +125 TC4421A/TC4422 ADS21946A_JP-page 20 2006 Microchip Technology Inc.

10 : 2006 Microchip Technology 21 ( ) (Microchip logo Accuron dsPIC KEELOQ microID MPLAB PIC PICmicro PICSTART PRO MATE PowerSmart rfPIC SmartShunt ) Microchip Technology Incorporated AmpLab, FilterLab Migratable Memory MXDEV MXLAB PICMASTER SEEVAL SmartSensor Embedded Control Solutions Company Microchip Technology Incorporated Analog-for-the-Digital Age Application Maestro dsPICDEM dsPICworks ECAN ECONOMONITOR FanSense FlexROM fuzzyLAB In-Circuit Serial Programming ICSP ICEPIC Linear Active Thermistor MPASM MPLIB MPLINK MPSIM PICkit PICDEM PICLAB PICtail PowerCal PowerInfo PowerMate PowerTool rfLAB rfPICDEM Select Mode Smart Serial SmartTel Tot al Endurance WiperLock Microchip Technology Incorporated SQTP Microchip Technology Incorporated 2006, Microchip Technology Incorporated, Printed in the , All Rights Reserved.