9A High-Speed MOSFET Drivers - Microchip …

1 2004 Microchip Technology 1TC4421/ tc4422 Features High Peak Output Current: 9A Wide Input Supply Voltage Operating Range:- to 18V High Continuous Output Current: 2A Max Fast Rise and Fall Times:- 30 ns with 4,700 pF Load- 180 ns with 47,000 pF Load Short Propagation Delays: 30 ns (typ) Low Supply Current:- With Logic 1 Input 200 A (typ)- With Logic 0 Input 55 A (typ) Low Output Impedance: (typ) Latch-Up Protected: Will Withstand Output Reverse Current Input Will Withstand Negative Inputs Up To 5V Pin-Compatible with the TC4420/TC4429 6A MOSFET Driver Space-saving 8-Pin 6x5 DFN PackageApplications Line Drivers for Extra Heavily-Loaded Lines Pulse Generators Driving the Largest MOSFETs and IGBTs Local Power ON/OFF Switch Motor and Solenoid DriverGeneral DescriptionThe tc4421 / tc4422 are high-current buffer/driverscapable of driving large MOSFETs and devices are essentially immune to any form ofupset, except direct overvoltage or cannot be latched under any conditions withintheir power and voltage ratings.

2 These parts are notsubject to damage or improper operation when up to5V of ground bounce is present on their ground termi-nals. They can accept, without damage or logic upset,more than 1A inductive current of either polarity beingforced back into their outputs. In addition, all terminalsare fully protected against up to 4 kV of tc4421 / tc4422 inputs may be driven directlyfrom either TTL or CMOS (3V to 18V). In addition,300 mV of hysteresis is built into the input, providingnoise immunity and allowing the device to be drivenfrom slowly rising or falling both surface-mount and pin-through-holepackages and four operating temperature range offer-ings, the tc4421 /22 family of 9A MOSFET Drivers fitinto most any application where high gate/linecapacitance drive is Types(1)8-Pin PDIP/1234 VDD5678 OUTPUTGNDVDDINPUTNCGNDOUTPUTTC4421TC4422 5-Pin TO-220 VDDGNDINPUTGNDOUTPUTTC4421TC4422 Tab isCommonto VDDNote 1:Duplicate pins must both be connected for proper.

3 Exposed pad of the DFN package is electrically tc4422 VDDOUTPUTGNDOUTPUTSOIC8-Pin DFN(2)VDDINPUTNCGND23456781TC4421TC4422 VDDOUTPUTGNDOUTPUTTC4421 tc4422 VDDOUTPUTGNDOUTPUT9A High-Speed MOSFET DriversTC4421/TC4422DS21420D-page 2 2004 Microchip Technology Block DiagramEffective InputOutputInputGNDVDD300 mV = 25 pF tc4422 InvertingNon-Inverting200 A 2004 Microchip Technology 3TC4421 CHARACTERISTICSA bsolute Maximum Ratings Supply Voltage .. +20 VInput Voltage .. (VDD + ) to (GND 5V)Input Current (VIN > VDD).. 50 mAPackage Power Dissipation (TA 70 C)5-Pin TO-220 .. Note 2 PDIP .. 730 750 mWPackage Power Dissipation (TA 25 C)5-Pin TO-220 (With Heatsink).

4 Impedances (To Case)5-Pin TO-220 R 10 C/W Stresses above those listed under Absolute MaximumRatings may cause permanent damage to the device. Theseare stress ratings only and functional operation of the deviceat these or any other conditions above those indicated in theoperation sections of the specifications is not to Absolute Maximum Rating conditions forextended periods may affect device CHARACTERISTICSE lectrical Specifications: Unless otherwise noted, TA = +25 C with VDD 1 , High Input VLogic 0 , Low Input VoltageVIL CurrentIIN 10 +10 A0V VIN VDDO utputHigh Output VoltageVOHVDD VDC TESTLow Output VoltageVOL TESTO utput Resistance, HighROH IOUT = 10 mA, VDD = 18 VOutput Resistance, LowROL IOUT = 10 mA, VDD = 18 VPeak Output CurrentIPK AVDD = 18 VContinuous Output CurrentIDC2 A10V VDD 18V, TA = +25 C( tc4421 / tc4422 CAT only) (Note 3)Latch-Up ProtectionWithstand Reverse CurrentIREV > ADuty cycle 2%, t 300 secSwitching Time (Note 1)

5 Rise TimetR 6075nsFigure 4-1, CL = 10,000 pFFall TimetF 6075nsFigure 4-1, CL = 10,000 pFDelay TimetD1 3060nsFigure 4-1 Delay TimetD2 3360nsFigure 4-1 Power SupplyPower Supply CurrentIS AVIN = 3 VVIN = 0 VOperating Input 18 VNote 1:Switching times ensured by :Package power dissipation is dependent on the copper pad area on the :Tested during characterization, not production 4 2004 Microchip Technology CHARACTERISTICS (OVER OPERATING TEMPERATURE RANGE)TEMPERATURE CHARACTERISTICSE lectrical Specifications: Unless otherwise noted, over operating temperature range with VDD 1 , High Input VLogic 0 , Low Input VoltageVIL CurrentIIN 10 +10 A0V VIN VDDO utputHigh Output VoltageVOHVDD VDC TESTLow Output VoltageVOL TESTO utput Resistance, HighROH IOUT = 10 mA, VDD = 18 VOutput Resistance, LowROL IOUT = 10 mA, VDD = 18 VSwitching Time (Note 1)Rise TimetR 60120nsFigure 4-1, CL = 10,000 pFFall TimetF 60120nsFigure 4-1, CL = 10,000 pFDelay TimetD1 5080nsFigure 4-1 Delay TimetD2 6580nsFigure 4-1 Power SupplyPower Supply CurrentIS = 3 VVIN = 0 VOperating Input 18 VNote 1:Switching times ensured by Specifications.

6 Unless otherwise noted, all parameters apply with VDD RangesSpecified Temperature Range (C)TA0 +70 CSpecified Temperature Range (E)TA 40 +85 CSpecified Temperature Range (V)TA 40 +125 CMaximum Junction TemperatureTJ +150 CStorage Temperature RangeTA 65 +150 CPackage Thermal ResistancesThermal Resistance, 5L-TO-220 JA 71 C/WThermal Resistance, 8L-6x5 DFN JA C/WTypical 4-layer board with vias to ground planeThermal Resistance, 8L-PDIP JA 125 C/WThermal Resistance, 8L-SOIC JA 120 C/W 2004 Microchip Technology 5TC4421 PERFORMANCE CURVESNote: Unless otherwise indicated, TA = +25 C with VDD 2-1:Rise Time vs. Supply 2-2:Rise Time vs.

7 Capacitive 2-3:Rise and Fall Times vs. 2-4:Fall Time vs. Supply 2-5:Fall Time vs. Capacitive 2-6:Propagation Delay vs. Supply :The graphs and tables provided following this note are a statistical summary based on a limited number ofsamples and are provided for informational purposes only. The performance characteristics listed hereinare not tested or guaranteed. In some graphs or tables, the data presented may be outside the specifiedoperating range ( , outside specified power supply range) and therefore outside the warranted pF4700 pF10,000 pF22,000 pFtRISE (nsec)VDD (V)tRISE (nsec)5V15V300250200150100500100100010,0 00100,00010 VCLOAD (pF)90604030705080-4004080120 Time (nsec)TA ( C)CLOAD = 10,000 pFVDD = 15 VtFALLtRISE1801601401201008060402004 6 8 10121416181000 pF4700 pF10,000 pF22,000 pFtFALL (nsec)VDD (V)tFALL (nsec)300250200150100500100100010,0005V1 0V15V100,000 CLOAD (pF)50810121416 184 Time (nsec)45403530256 VDD (V)CLOAD = 1000 pFtD1tD2TC4421/TC4422DS21420D-page 6 2004 Microchip Technology.

8 Unless otherwise indicated, TA = +25 C with VDD 2-7:Supply Current vs. Capacitive Load (VDD = 18V).FIGURE 2-8:Supply Current vs. Capacitive Load (VDD = 12V).FIGURE 2-9:Supply Current vs. Capactive Load (VDD = 6V).FIGURE 2-10:Supply Current vs. Frequency (VDD = 18V).FIGURE 2-11:Supply Current vs. Frequency (VDD = 12V).FIGURE 2-12:Supply Current vs. Frequency (VDD = 6V).220100200180160140120100806040200100 ,00010, MHz632 kHz200 kHz20 kHz2 kHzISUPPLY (mA)CLOAD (pF)VDD = 18 VISUPPLY (mA) kHz20 kHz632 kHz200 kHz2 MHz100100,00010,0001000 VDD = 12 VCLOAD (pF)ISUPPLY (mA)100908070605040302010020 kHz632 kHz200 kHz2 kHz100100,00010,0001000 VDD = 6 VCLOAD (pF)Frequency (kHz)18010080604020012014016022,000 pF470 pF10,000 F4700 pF10100100047,000 pFISUPPLY (mA)VDD = 18 VISUPPLY (mA)Frequency (kHz)180100806040200120140160470 pF22,000 pF4700 pF10,000 pF47,000 pF101001000 VDD = FISUPPLY (mA)47,000 pF120402001004700 pF10 Frequency (kHz)

9 1001000608022,000 pF470 pF10,000 pF101001000 VDD = F 2004 Microchip Technology 7TC4421/ tc4422 Note: Unless otherwise indicated, TA = +25 C with VDD 2-13:Propagation Delay vs. Input 2-14:Crossover Energy vs. Supply 2-15:High-State Output Resistance vs. Supply 2-16:Propagation Delay vs. 2-17:Quiescent Supply Current vs. 2-18:Low-State Output Resistance vs. Supply (nsec)1101009080706050403020100123456789 10 Input Amplitude (V)VDD = 10 VCLOAD = 10,000 pFtD1tD210-710-6A secNOTE:The values on this graph represent the loss seen by the driver during a complete cycle. For the loss in a single transition, divide the stated value by (V)10-8646 (V)TJ = 150 CTJ = 25 CRDS(ON) ( )50 40 20020406080 100 120 60 Time (nsec)454035302520TA ( C)tD1tD2 VDD = 18 VCLOAD = 10,000 pFVIN = 5V102-40 -20020406080 100 120-60 VDD = 18 VInput = 1 Input = 0 IQUIESCENT ( A)TJ ( C)103 RDS(ON) ( )46 (V)TJ = 150 CTJ = 25 CTC4421/TC4422DS21420D-page 8 2004 Microchip Technology DESCRIPTIONSThe descriptions of the pins are listed in Table 3-1:PIN FUNCTION Input (VDD)The VDD input is the bias supply for the MOSFET driverand is rated for to 18V with respect to the groundpin.

10 The VDD input should be bypassed to ground witha local ceramic capacitor. The value of the capacitorshould be chosen based on the capacitive load that isbeing driven. A minimum value of F is InputThe MOSFET driver input is a high-impedance,TTL/CMOS compatible input. The input also has300 mV of hysteresis between the high and lowthresholds that prevents output glitching even when therise and fall time of the input signal is very Push-Pull OutputThe MOSFET driver output is a low-impedance,CMOS, push-pull style output capable of driving acapacitive load with peak currents. The MOSFET driver output is capable of withstanding peakreverse currents of either ground pins are the return path for the bias currentand for the high peak currents that discharge the loadcapacitor.