Dual Common Cathode Ultrafast Rectifier - Vishay

1 General Semiconductor Revision: 27-May-20201 Document Number: 88597 For technical questions within your region: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT Common Cathode Ultrafast RectifierFEATURES Power pack Glass passivated pellet chip junction Ultrafast recovery time Low switching losses, high efficiency Low thermal resistance High forward surge capability Solder dip 260 C, 40 s Material categorization: for definitions of compliance please see APPLICATIONSFor use in high frequency Rectifier of switching mode power supplies, inverters, freewheeling diodes, DC/DC converters, and other power switching DATACase: TO-3P (TO-247AD) Molding compound meets UL 94 V-0 flammability rating B as e P / N-E 3 - R o HS -c o m pl ian t, co m m er c ial g r ad e Terminals: matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix meets JESD 201 class 1A whisker testPolarity: as markedMounting Torque.

2 10 in-lbs CHARACTERISTICSIF(AV)30 AVRRM50 V, 100 V, 150 V, 200 V, 300 V, 400 V, 500 V, 600 VIFSM300 Atrr35 ns, 50 nsVF at IF = 15 V, V, VTJ CPackageTO-3P (TO-247AD)Circuit configurationCommon Cathode TO-3P (TO-247AD)123 PIN 1 PIN 3 CASEPIN 2 MAXIMUM RATINGS (TA = 25 C unless otherwise noted)PARAMETERSYMBOL FEP30AP FEP30BP FEP30CP FEP30DP FEP30FP FEP30GP FEP30HP FEP30JP UNIT Maximum repetitive peak reverse voltage VRRM 50100150200300400500600V Maximum RMS voltage VRMS 3570105140210280350420V Maximum DC blocking voltage VDC 50100150200300400500600V Maximum average forward rectified current at TC = 100 C IF(AV) 30 A Peak forward surge current ms single half sine-wave superimposed on rated load per diodeIFSM 300 A Operating storage and temperature range TJ, TSTG -55 to +150 C/W General Semiconductor Revision: 27-May-20202 Document Number: 88597 For technical questions within your region: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE.

3 THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT (1)Thermal resistance from junction to case per diode mounted on heatsinkELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted)PARAMETERTESTCONDITIONSSYMBOLFEP 30AP FEP 30BP FEP 30CP FEP 30DP FEP 30FP FEP 30GP FEP 30HP FEP 30JP UNIT Maximum instantaneous forward voltage per diode A VF Maximum DC reverse current at rated DC blocking voltage per diodeTC = 25 CIR10 ATC = 100 C500 Maximum reverse recovery time per diode IF = A, IR = A, Irr = Atrr 35 50ns Typical junction capacitance per diode V, 1 MHz CJ 175 145pF THERMAL CHARACTERISTICS (TA = 25 C unless otherwise noted)PARAMETERSYMBOL FEP 30AP FEP 30BP FEP 30CP FEP 30DP FEP 30FP FEP 30GP FEP 30HP FEP 30JP UNIT Typical thermal resistance per diodeR JC (1)

4 C/W ORDERING INFORMATION (Example)PACKAGEPREFERRED P/NUNIT WEIGHT (g)PACKAGE CODEBASE QUANTITYDELIVERY MODETO-247 ADFEP30JP-E3 General Semiconductor Revision: 27-May-20203 Document Number: 88597 For technical questions within your region: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted)Fig. 1 - Forward Current Derating CurveFig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Per DiodeFig. 3 - Typical Instantaneous Forward Characteristics Per DiodeFig. 4 - Typical Reverse Leakage Characteristics Per DiodeFig. 5 - Typical Junction Capacitance Per Diode 0501001500612243036 Average Forward Current (A)Case Temperature ( C)Resistive or Inductive Load110100050100150200250300 Number of Cycles at 60 HzPeak Forward Surge Current (A)TC = 100 ms Single Half Forward Current (A)Instantaneous Forward Voltage (V) Width = 300 s1 % Duty CycleTJ = 125 CTJ = 25 C50 V to 200 V300 V to 400 V500 V to 600 VPercent of Rated Peak Reverse Voltage (%)Instantaneous Reverse Current ( A) 20 30 40 50 60 70 80 90 100 TJ = 125 CTJ = 100 CTJ = 25 C50 V to 200 V300 V to 600 1000 Reverse Voltage (V)Junction Capacitance (pF)TJ = 25 Cf = MHzVsig = 50 mVp-p50 V to 400 V500 V to 600 General Semiconductor Revision: 27-May-20204 Document Number: 88597 For technical questions within your region: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE.

5 THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT OUTLINE DIMENSIONS in inches (millimeters)PIN1 PIN3 CASEPIN2TO-3P (TO-247AD) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( )10 Sides30 101 ( ) ( ) ( ) ( )Legal Disclaimer Revision: 09-Jul-20211 Document Number: 91000 Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product.

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