ELECTROSTATIC DISCHARGE TRAINING MANUAL

1 NAVSEA SE 003-AA-TRN-OO. ELECTROSTATIC DISCHARGE . LEYE V. TRAINING MANUAL . s DTIC. ,T OF I!ELECTE, ,4MA 9 981. 0W\R. E. PUBLISHED BY DIRECTION OF. COMMANDER, NAVAL SEA SYSTEMS COMMAND. Al, :,,; .. release, Diribun Unlimit d 81 1 2,3 066. :Ai/') NAVSEA-SE-p23-AA-TRN-010. TRAINING V4 ANUAL. PUBLISHED BY DIRECTION OF. COMMANDER, NAVAL SEA SYSTEMS COMMAND. -- - ---- ~- - FOREWORD. MANY ELECTRONIC PARTS SUCH AS MICROCIRCUITS, DISCRETE SEMICONDUCTORS, FILM RESISTORS AND CRYSTALS ARE SUSCEPTIBLE TO DAMAGE FROM ELECTROSTATIC DIS- CHARGE (ESD). COMPREHENSIVE ESD CONTROL PROGRAMS ARE REQUIRED TO PROTECT THESE. PARTS DURING MANUFACTURE, ASSEMBLY, TEST, REPAIR/REWORK, MAINTENANCE, AND OTHER.

2 HANDLING OPERATIONS. SUCH CONTROL PROGRAMS MUST BE IMPLEMENTED THROUGHOUT THE. LIFE CYCLE OF THESE ELECTRONIC PARTS. THE INTENT OF THIS TRAINING MANUAL IS. TO COMPLEMENT AN ESD AWARENESS TRAINING COURSE WHICH IS A KEY PART OF ANY EFFEC- TIVE ESD CONTROL PROGRAM. THIS MANUAL COVERS TOPICS SUCH AS: PRINCIPLES OF STATIC ELECTRIC'ITY, CHARGING AND DISCHARGING, PRIME STATIC GENERATORS, STATIC ELECTRIFICATION OF. ELECTRICAL AND ELECTRONIC PARTS, ELEMENTS OF AN ESD CONTROL PROGRAM, ESD PROTEC- TIVE MATERIALS, ESD PROTECTIVE EQUIPMENT, PACKAGING AND MARKING OF ESDS ITEMS, ESD IN DESIGN, ESD HANDLING PRECAUTIONS AND PROCEDURES, AND MONITORING OF ESD. CONTROL - C NDING OFFICER.

3 NAVA UBLICATIONS AND FORMS CENTER. 5801 T R AV U. PHILADELP , PENNS VAN 191. RE ESTS FROM INDUSTRY SHOULD BE FORWARDED E SAME R S VIA T LOCA. GOVER ME REPRESENT V , D SA) OR MA PURCHA IRECTLY FROM p THE SA E DDRESS, ATTN: ODE FOIG. ~-A- NAVAL SEA SYSTEMS COMMAND. DEPARTMENT OF THE NAVY. CODE 6151. WASHINGTON, 20362. , .2 SEPTEMBER 1980. - - ' , , , ,|. i1. TABLE OF CONTENTS. Page I. INTRODUCTION .. 1. A. BACKGROUND .. 1. B. ESDS PART FAILURE .. 1. C. TRANSIENT UPSET FAILURE .. 2. D. TRANSMITTED FAILURES .. 3. E. THE ESD PROBLEM .. 3. F. ESTABLISHED ESD CONTROL PROGRAM REQUIREMENTS .. 3. II. PRINCIPLES OF STATIC ELECTRICITY .. 10. A. BACKGROUND .. 10.

4 B. TRIBOELECTRIC EFFECT .. 10. C. MATHEMATICAL FORMULATION OF ELECTROSTATIC FIELD. ANALYSIS .. 13. III. CHARGING AND DISCHARGING .. 30. A. INTRODUCTION .. 30. B. PARAMETERS INFLUENCING THE MAGNITUDE OF STATIC CHARGE. GENERATION .. 42. C. MATHEMATICAL EXPRESSIONS FOR ELECTROSTATIC DISCHARGE .. 43. IV. PRIME STATIC GENERATORS .. 51. A. TYPICAL CHARGE GENERATORS .. 51. B. MANUFACTURING PROCESSES GENERATING STATIC ELECTRICITY .. 51. V. STATIC ELECTRIFICATION OF ELECTRICAL AND ELECTRONIC PARTS .. 55. A. GENERAL .. 57. B. FAILURE MECHANISMS .. 57. C. LATENT/DEGRADATION DAMAGE FAILURE MECHANISMS .. 61. D. EXAMPLES OF ESD FAILURES .. 61. i1. TABLE OF CONTENTS (Cont'dj Page VI.)

5 ESD CONTROL PROGRAM .. 71. A. GENERAL .. 71. B. PROGRAM REQUIREMENTS .. 71. C. TAILORING .. 81. VII. ESD PROTECTIVE MATERIALS .. 84. A. GENERAL .. 84. B. ESD PROTECTIVE MATERIALS .. 84. C. ELEMENTS OF AN ESD PROTECTED AREA .. lo0. VIII. ESD PROTECTIVE EQUIPMENT .. 121. A. GENERAL .. 121. B. IONIZERS .. 121. C. ESD PROTECTIVE TOOLS .. 123. D. ELECTROSTATIC DETECTORS AND ALARMS .. 124. E. PORTABLE ESD WORK STATION KITS .. 126. F. SPECIAL ESD TEST EQUIPMENT .. 126. IX. PACKAGING AND MARKING OF ESDS ITEMS .. 128. A. GENERAL .. 128. B. PROTECTION AGAINST TRIBOELECTRIC GENERATION .. 129. C. PROTECTION AGAINST DIRECT DISCHARGE .. 129. D. PROTECTION AGAINST ELECTROSTATIC FIELDS.

6 129. E. SHUNTING DEVICES .. 130. F. NAVY ESD PACKING REQUIREMENTS .. 130. G. REPACKAGING FOR DISTRIBUTION .. 131. TABLE OF CONTENTS (Cont'i). Page X. ESD IN DESIGN .. 132. A. GENERAL .. 132. B. HUMAN MODEL EQUIVALENT CIRCUIT ..133. C. ELECTROSTATIC DISCHARGE 136. D. EXAMPLES OF SOME TYPICAL DAMAGE PATH IN MICROCIRCUITS .. 148. E. COMMENTS ON EMP TESTING AND CONVERSION OF EMP DATA. TO .. 150. F. ESO PROTECTIVE CIRCUITRY ..159. XI. ESD HANDLING PRECAUTIONS AND PROCEDURES .. 186. A. GENERAL HANDLING PRECAUTIONS ..186. XII. MONITORING OF ESD CONTROL 190. A. GENERAL .. 190. B. ESD PROGRAM MONITORING AND 190. C. FORMAL 201. XIII. REFERENCES .. 204. SEEM- ELECTROSTATIC DISCHARGE (ESD).

7 CONTROL PROGRAM TRAINING COURSE. I. INTRODUCTION. A. BACKGROUND. STATIC ELECTRICITY IS FAMILIAR TO US ALL AS LIGHTNING, STATIC. CLING OF CLOTHING AND SPARKING WHEN TOUCHING A DOOR KNOB OR OTHER METALLIC. OBJECTS IN COOL, DRY WEATHER. ORDINARY VINYL CLEAN ROOM DRAPERIES CAUSED CONSIDERABLE. INTERFERENCE WITH THE MARINER SPACECRAFT RECEIVERS AT JET PROPULSION LAB- ORATORIES IN PASADENA, WHENEVER A PASSING TECHNICIAN BRUSHED HIS BUNNY-SUIT. AGAINST THE CLEAR VINYL CURTAIN WHICH FORMED THE WALLS OF THE PORTABLE. DOWN-FLOW ROOM IN WHICH THE MARINER WAS ASSEMBLED. STATIC ELECTRICITY AND THE DIRT IT ATTRACTS CAN CAUSE DATA. LOSS IN A COMPUTER. BOTH ARE RESPONSIBLE FOR MAJOR PROBLEMS SUCH AS.

8 PRINTER MALFUNCTION, PAPER JAMS, DESTRUCTION OF SENSITIVE LOGIC CIRCUITS. AND THE ATTRACTION OF CONTAMINANTS TO READ/WRITE HEADS AND MAGNETIC RE- CORDING SURFACES. ADDITIONALLY, STATIC CAN PRODUCE NOISE TRANSIENTS IN. SYSTEM INTERFACE LINES CAUSING EQUIPMENT MALFUNCTION OR DEGRADATION OF. SYSTEM PERFORMANCE. FOR EXAMPLE, IN 1974, STATIC LEVELS AS HIGH AS 17,000. VOLTS WERE DISCHARGED IN THE COMPUTER ROOM AT NEW YORK TELEPHONE AT VAR- IOUS TIMES OF THE DAY, CAUSING THE IBM 1130 COMPUTING SYSTEM TO BE OUT OF. PARITY. THIS OCCURRED ON THE AVERAGE OF FIVE TIMES DAILY RESULTING IN AN. ENORMOUS NUMBER OF BILLING ERRORS. B. ESDS PART FAILURE. STATIC VOLTAGES UP TO AND SOMETIMES EXCEEDING 15,000 VOLTS.

9 CAN BE GENERATED BY SIMPLE MOTIONS SUCH AS GETTING UP FROM A CHAIR, 2. WALKING ACROSS A ROOM, ROCKING IN A CHAIR, RUBBING OF CLOTHING AND THOUS- ANDS OF OTHER NORMAL, EVERYDAY PERSONNEL MOVEMENTS. SUCH STATIC VOLTAGES. CAN DAMAGE ELECTRICAL AND ELECTRONIC COMPONENTS AND DEVICES (PARTS) SUCH. AS INTEGRATED CIRCUITS (ICs), DISCRETE SEMICJNDUCTORS, THICK AND THIN. FILM DEVICES AND CRYSTALS. THE STATIC DANGER TO SOLID STATE SEMICONDUCTORS. IS DUE TO THE EXTENSIVE USE OF THEN OXIDE LAYERS ( , MOS DEVICES) AND. THE MICROMINIATURIZATION OF ACTIVE JUNCTIONS WHICH ARE SEVERELY LIMITED. IN THE POWER THEY CAN HANDLE. FILM RESISTORS ARE DAMAGED BY METALLIZATION.

10 MELT; CRYSTALS BY MECHANICAL OVERSTRESS IN REACTION TO HIGH ESD VOLTAGE. THE ESD SENSITIVITY OF PARTS IS BECOMING MORE EVIDENT DURING. PRODUCTION, USE, TESTING, AND FAILURE ANALYSIS. THE CONSTRUCTION AND. DESIGN FEATURES OF CURRENT MICROTECHNOLOGY HAS RESULTED IN PARTS WHICH. CAN BE DAMAGED BY ESD VOLTAGES AS LOW AS 20 VOLTS. THE TREND IN THIS TECH- NOLOGY IS TOWARDS GREATER COMPLEXITY AND INCREASED PACKAGING DENSITY; HENCE. SMALLER ACTIVE ELEMENTS AND THINNER DIELECTRICS BETWEEN ACTIVE ELEMENTS. THIS RESULTS IN PARTS THAT ARE BECOMING MORE AND MORE SENSITIVE TO ESD. WHILE CATASTROPHIC FAILURES OF ICs ARE A MAJOR PROBLEM, THEY. BECOME OBVIOUS RATHER QUICKLY TO THE EQUIPMENT USER.