Enhanced isoCink+TM Bridge Rectifiers

1 PB5006, PB5008, General Semiconductor Revision: 30-Jul-20181 Document Number: 84809 For technical questions within your region: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT isoCink+TM Bridge Rectifiers *Tested to UL standard for safety electrically isolated semiconductor devices. UL 1557 4th edition. Dielectric tested to maximum case, storage and junction temperature to 150 C to withstand 1500 V.

2 Epoxy meets UL 94 V-0 flammability UL recognition file number E312394 (QQQX2) UL 1557 (see *) Enhanced high-current density single in-line package Superior thermal conductivity Glass passivated chip junction Solder dip 275 C max. 10 s, per JESD 22-B106 Material categorization: for definitions of compliance please see APPLICATIONSG eneral purpose use in AC/DC Bridge full wave rectification for switching power supply, home appliances and white-goods DATACase: PB Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial gradeTerminals.

3 Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker testPolarity: As marked on bodyMounting Torque: 10 cm-kg ( inches-lbs) Torque: cm-kg (5 inches-lbs) Notes(1)With heatsink(2)Without heatsink, free airPRIMARY CHARACTERISTICSP ackagePBIF(AV)45 AVRRM600 V, 800 V, 1000 VIFSM450 AIR10 AVF at IF = VTJ CCircuit configurationIn-line+~~--~~+~~isoCink+ Case Style PB+~ ~ -MAXIMUM RATINGS (TA = 25 C unless otherwise noted)PARAMETERSYMBOL PB5006PB5008PB5010 UNIT Maximum repetitive peak reverse voltage VRRM 6008001000V Average rectified forward current (Fig.)

4 1, 2)TC = 84 C (1)IO45A TA = 25 C (2) peak forward surge current ms single sine-wave, TJ = 25 CIFSM 450A Rating for fusing (t < ms) TJ = 25 CI2t840A2sOperating junction and storage temperature range TJ, TSTG -55 to +150 C PB5006, PB5008, General Semiconductor Revision: 30-Jul-20182 Document Number: 84809 For technical questions within your region: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT (1)Pulse test: 300 s pulse width, 1 % duty cycle(2)Pulse test.

5 10 ms pulse widthNotes(1)With 60 W air cooled heatsink(2)Without heatsink, free airELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted)PARAMETERTEST CONDITIONSSYMBOL Maximum instantaneous forward voltage per diode (1)IF = A TA = 25 C VF TA = 125 C current per diode (2)rated VRTA = 25 C IR -10 A TA = 125 C 170500 Typical junction capacitance per V, 1 MHzCJ 162-pFTHERMAL CHARACTERISTICS (TA = 25 C unless otherwise noted)PARAMETERSYMBOL PB5006PB5008PB5010 UNIT Typical thermal resistanceR JC (1) C/W R JA (2)18 ORDERING INFORMATION (Example)PREFERRED P/NUNIT WEIGHT (g)PREFERRED PACKAGE CODEBASE QUANTITYDELIVERY MODEPB5006-E3 , PB5008, General Semiconductor Revision: 30-Jul-20183 Document Number: 84809 For technical questions within your region: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE.

6 THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted)Fig. 1 - Derating Curve Output Rectified CurrentFig. 2 - Forward Current Derating CurveFig. 3 - Forward Power DissipationFig. 4 - Typical Forward Characteristics Per DiodeFig. 5 - Typical Reverse Characteristics Per DiodeFig. 6 - Typical Junction Capacitance Per Diode040801600515202550 Case Temperature ( C)Average Forward Output Current (A)102060120 With HeatsinkSine-Wave, R-Load10014030454035 TCTCTC Measured at Device Bottom01235 Ambient Temperature ( C)Average Forward Rectified Current (A)05025751001251504 Without HeatsinkSine-Wave, R-LoadFree Air, TA051015202555040 Average Forward Current (A)Forward Power Dissipation (W) Forward Voltage (V)Instantaneous Forward Current (A)

7 TA = 150 CTA = 125 CTA = 25 = 100 CTA = 85 of Rated Peak Reverse Voltage (%) Instantaneous Reverse Current ( A) TA = 150 CTA = 125 CTA = 25 = 100 CTA = 85 Voltage (V)Junction Capacitance (pF)100TJ = 25 Cf = MHzVsig = 50 mVp-pPB5006, PB5008, General Semiconductor Revision: 30-Jul-20184 Document Number: 84809 For technical questions within your region: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT OUTLINE DIMENSIONS in inches (millimeters)Case Type ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( )5 Side ViewSide ViewFront Side ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) x 45 CHAMFERL egal Disclaimer Revision: 08-Feb-171 Document Number.

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