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Epitaxy - Wake Forest University

Defects reduce electron mobility, carrier concentration and optical efficiency. • Current levels in Si are 1-10 defects/cm. 2. • Defects can propagate from the substrate as a screw dislocations. • Dopants and impurities can cause edge and point dislocations. • Another type of defect is the stacking faults where the stacking

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  Defects, Epitaxy

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