先端GaN-HEMTデバイス技術 - img.jp.fujitsu.com

1 GaN-HEMT . GaN-HEMT Technology for Future Applications . WiMAX Worldwide Interoperability for Microwave Access GaN . HEMT High Electron Mobility Transistor . GaN-HEMT .. MIS Metal Insulator Semiconductor . 3 V 800 mA/mm 320 V . GaN .. Abstract We investigated future power applications of GaN high electron mobility transistors (HEMTs) after successfully developing a high-efficiency GaN-HEMT amplifier for mobile Worldwide Interoperability for Microwave Access (WiMAX) base stations. Its excellent material properties also make the GaN-HEMT a good candidate for future power electronic devices, which must operate with a high drain current and high voltage. Fabricated normally-off GaN-HEMT devices showed a threshold voltage of 3 V, maximum drain current of 800 mA/mm, and off-state breakdown voltage of 320 V.

2 These characteristics are attributed to the novel cap layer that enhances the electron density, a recessed gate structure, and a metal-insulator-semiconductor structure. These results show the potential of normally-off GaN based devices for future power electronic application.. GaN-HEMT . GaN-HEMT GaN-HEMT .. fujitsu . 60, 5, p. 413-416 (09, 2009) 413. GaN-HEMT . Si .. GaN . HEMT High Electron Mobility Transistor -1 GaN-HEMT . 2 . GaN Si . MOS Si- GaN-HEMT .. LDMOS LDMOS Laterally Diffused Metal . Oxide Semiconductor . GaAs FET .. WiMAX Worldwide . Interoperability for Microwave Access . GaN-HEMT . (1).. GaN-HEMT RF .. MIS Metal Insulator -1 Semiconductor . Si . GaN MIS-HEMT .. -2 GaN MIS-HEMT .. 100 .. Si Al2O3 .. N C n . (m cm2). Si GaN.

3 10 Ga . AlN .. n .. G aN GaN . 1 n . GaN AlGaN .. 2 . 100 1000 10 000 SiC . (V). -1 -2 GaN MIS-HEMT . between breakdown voltage MIS-HEMT structures with novel triple cap and on-resistance for high power devices. layer used in this work. 414 fujitsu . 60, 5, (09, 2009). GaN-HEMT . 320 V . -3 b . V RF . 520 mA/mm 5 m . (2) . 10 m .. GaN MIS-HEMT.. GaN-HEMT .. ALD Atomic Layer . Deposition .. ALD .. GaN-HEMT .. -4 .. MIS-HEMT -3 a . mS/mm . 7 m 800 150. mA/mm . 10 V. m 5 m 600. 100.. 3 V 0 V 400. 9 A/mm 50. 200. 10 V 800 mA/mm Vth 3 V. 0 0. -4 -2 0 2 4 6 8 10. V V . a .. 5 mA/div . 10 V V gs=0. Vgs 0V(pinch-off V pinch-off condition). condition .. 320V. 320 V.. 00 250. 250. V . b . -3 GaN MIS-HEMT . for GaN MIS-HEMT device 0 V in this work.

4 fujitsu . 60, 5, (09, 2009) 415. GaN-HEMT . Vds Vgs 0 V 0 V .. Vds Vgs 50 V 0 V .. 800 Vgs 10 V.. mA/mm . Vgs 8 V. 600. GaN MIS-HEMT . Vgs 6 V. 400 . Vgs 4 V ALD . 200.. 0 Vgs 2 V 3 V . 0 10 20 30 40 50. V . 300 V . Vds . Vgs GaN . -4 GaN MIS-HEMT I-V . I-V characteristics for GaN. MIS-HEMT device used in this work.. 1 WiMAX . 0 V 0 V 50 V 0 V GaN-HEMT fujitsu . 2009 .. 2 T Ohki et al An over 100 W AlGaN/GaN. 50 V 0 V enhancement-mode HEMT power amplifier with GaN MIS-HEMT piezoelectric-induced cap structure physica . status solidi c Issue 6 1365-1368 2009 . ALD . 416 fujitsu . 60, 5, (09, 2009).