High Current Density Surface Mount Glass …

1 S4PB, S4PD, S4PG, S4PJ, S4PK, General Semiconductor Revision: 13-Aug-181 Document Number: 89032 For technical questions within your region: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT Current Density Surface MountGlass Passivated RectifiersDESIGN SUPPORT TOOLSFEATURES Very low profile - typical height of mm Ideal for automated placement Glass passivated pellet chip junction Low forward voltage drop high surge capability Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C AEC-Q101 qualified available - Automotive ordering code: base P/NHM3 Material categorization.

2 For definitions of compliance please see APPLICATIONSFor use in general purpose rectification of power supplies, inverters, converters and freewheeling diodes for consumer, automotive, and DATACase: SMPC (TO-277A) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Base P/NHM3_X - halogen-free, RoHS-compliant and AEC-Q101 qualified ( _X denotes revision code A, B,..)Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix meets JESD 201 class 2 whisker testPRIMARY CHARACTERISTICSIF(AV) AVRRM100 V, 200 V, 400 V, 600 V, 800 V, 1000 VIFSM100 AIR10 AVF at IF = 4 VTJ CPackageSMPC (TO-277A)Circuit configurationSingleSMPC (TO-277A)Anode 1 Anode 2 CathodeKK21eSMP Seriesclick logo to get startedAvailableModelsAvailableMAXIMUM RATINGS (TA = 25 C unless otherwise noted)PARAMETERSYMBOLS4 PBS4 PDS4 PGS4 PJS4 PKS4 PMUNITD evice marking codeS4 PBS4 PDS4 PGS4 PJS4 PKS4 PMMax.

3 Repetitive peak reverse voltage VRRM1002004006008001000V Average forward currentIF(AV) forward surge Current 10 ms single half sine-wave superimposed on rated loadIFSM100 AOperating junction and storage temperature rangeTJ, TSTG-55 to +150 CS4PB, S4PD, S4PG, S4PJ, S4PK, General Semiconductor Revision: 13-Aug-182 Document Number: 89032 For technical questions within your region: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT (1)Pulse test: 300 s pulse width, 1 % duty cycle (2)Pulse test: Pulse width 40 msNote(1) Units mounted on recommended PCB 1 oz. pad layoutNote(1)AEC-Q101 qualifiedELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted)PARAMETERTEST forward voltageIF = A TA = 25 CVF (1) = = ATA = 125 = A Current Rated VRTA = 25 CIR (2)-10 ATA = 125 C55100 Max.

4 Reverse recovery timeIF = A, IR = A, Irr = sTypical junction V, 1 MHzCJ30-pFTHERMAL CHARACTERISTICS (TA = 25 C unless otherwise specified)PARAMETER SYMBOL S4 PBS4 PDS4 PGS4 PJS4 PKS4 PMUNIT Typical thermal resistance R JA (1)60 C/W R JL4 ORDERING INFORMATION (Example)PREFERRED P/NUNIT WEIGHT (g)PACKAGE CODEBASE QUANTITYDELIVERY MODES4PJ-M3 " diameter plastic tape and reelS4PJ-M3 " diameter plastic tape and reelS4 PJHM3_A/H (1) " diameter plastic tape and reelS4 PJHM3_A/I (1) " diameter plastic tape and reelS4PB, S4PD, S4PG, S4PJ, S4PK, General Semiconductor Revision: 13-Aug-183 Document Number: 89032 For technical questions within your region: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE.

5 THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted)Fig. 1 - Maximum Forward Current Derating CurveFig. 2 - Forward Power Loss CharacteristicsFig. 3 - Typical Instantaneous Forward CharacteristicsFig. 4 - Typical Reverse Leakage CharacteristicsFig. 5 - Typical Junction CapacitanceFig. 6 - Typical Transient Thermal Temperature ( C)Average Forward Rectified Current (A)Resistive or Inductive measuredat the Cathode Band TerminalAverage Forward Current (A)Average Power Loss (W) = = = = = = = Forward Current (A)Instantaneous Forward Voltage (V)TJ= 125 CTJ= -40 CTJ= 150 CTJ= 25 Reverse Current ( A)Percent of Rated Peak Reverse Voltage (%)TJ= 25 CTJ= -40 CTJ= 125 CTJ= 150 CTJ = 25 Cf = MHzVsig = 50 mVp-pReverse Voltage (V)Junction Capacitance (pF) to - Pulse Duration (s)Transient Thermal Impedance ( C/W)S4PB, S4PD, S4PG, S4PJ, S4PK, General Semiconductor Revision: 13-Aug-184 Document Number.

6 89032 For technical questions within your region: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT OUTLINE DIMENSIONS in inches (millimeters)Conform to JEDEC TO-277 ASMPC (TO-277A) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) Pad ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( )K 2 1 Legal Disclaimer Revision: 09-Jul-20211 Document Number: 91000 Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. vishay Intertechnology, Inc.

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