Hyperfast Rectifier, 4 A FRED Pt - Vishay Intertechnology

1 Semiconductors Revision: 04-Feb-20191 Document Number: 94979 For technical questions within your region: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT rectifier , 4 A FRED Pt DESIGN SUPPORT TOOLSFEATURES Hyperfast recovery time, reduced Qrr, and soft recovery 175 C maximum operating junction temperature Specified for output and snubber operation Low forward voltage drop Low leakage current Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C AEC-Q101 qualified, meets JESD 201 class 2 whisker test Material categorization: for definitions of compliance please see / APPLICATIONSS tate of the art Hyperfast recovery rectifiers specifically designed with optimized performance of forward voltage drop and Hyperfast recovery planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness, and reliability devices are intended for use in snubber, boost, lighting, piezo-injection, as high frequency rectifiers and freewheeling extremely optimized stored charge and low recovery current minimize the switching losses and reduce power dissipation in the switching CHARACTERISTICSIF(AV)4 AVR200 VVF at Vtrr (typ.)

2 27 nsTJ CPackageSMPC (TO-277A)Circuit configurationSingleKCathodeAnode 2 Anode 1 SMPC (TO-277A)eSMP SeriesK21click logo to get startedAvailableModelsABSOLUTE MAXIMUM RATINGSPARAMETER SYMBOLTEST CONDITIONSVALUESUNITSPeak repetitive reverse voltage VRRM200 VAverage rectified forward currentIF(AV)TSp = 165 C4 ANon-repetitive peak surge currentIFSMTJ = 25 C130 Operating junction and storage temperaturesTJ, TStg-55 to +175 CELECTRICAL SPECIFICATIONS (TJ = 25 C unless otherwise specified)PARAMETERSYMBOLTEST voltage, blocking voltageVBR,VRIR = 100 A200--VForward voltageVFIF = 4 = 4 A, TJ = 125 leakage currentIRVR = VR rated--2 ATJ = 125 C, VR = VR rated-210 Junction capacitanceCTVR = 200 Semiconductors Revision: 04-Feb-20192 Document Number: 94979 For technical questions within your region: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE.

3 THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT 1 - Typical Forward Voltage Drop CharacteristicsFig. 2 - Typical Values of Reverse Current vs. Reverse VoltageDYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 C unless otherwise specified)PARAMETERSYMBOLTEST recovery timetrrIF = A, dIF/dt = 50 A/ s, VR = 30 V-27-nsIF = A, IR = 1 A, Irr = A--25TJ = 25 CIF = 4 A dIF/dt = 200 A/ s VR = 160 V-20-TJ = 125 C-31-Peak recovery currentIRRMTJ = 25 = 125 recovery chargeQrrTJ = 25 C-22-nCTJ = 125 C-70-THERMAL - MECHANICAL SPECIFICATIONSPARAMETERSYMBOLTEST junction and storage temperature rangeTJ, TStg-55-175 CThermal resistance, junction to solder C/WThermal resistance, junction to ambientRthJA-85-Approximate deviceCase style SMPC (TO-277A) Instantaneous Forward Current (A)VF- Forward Voltage Drop (V)TJ= 150 CTJ= 25 CTJ= 175 CTJ= 125 CVR - Reverse Voltage (V)IR - Reverse Current ( A) C125 C150 C175 Semiconductors Revision: 04-Feb-20193 Document Number.

4 94979 For technical questions within your region: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT 3 - Typical Junction Capacitance vs. Reverse VoltageFig. 4 - Maximum Allowable Case Temperature vs. Average Forward CurrentFig. 5 - Forward Power Loss CharacteristicsFig. 6 - Typical Reverse Recovery Time vs. dIF/dtFig. 7 - Typical Stored Charge vs. dIF/dtNote(1)Formula used: TC = TJ - (Pd + PdREV) x RthJC; Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 5); PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = rated VR10100050100150200CT- Junction Capacitance (pF)VR- Reverse Voltage (V) Case Temperature ( C)IF(AV)- Average Forward Current (A)Square wave (D = )80 % rated VRappliedSee note (1)DC01234501234567 Average Power Loss (W)IF(AV)- Average Forward Current (A)D = = = = = limit510152025303540451001000trr(ns)dIF/ dt (A/ s)25 C125 CIF= 4 A0204060801001201001000 Qrr(nC)dIF/dt (A/ s)125 C25 CIF= 4 Semiconductors Revision: 04-Feb-20194 Document Number: 94979 For technical questions within your region: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE.

5 THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT 8 - Transient Thermal Impedance, Junction to CaseFig. 9 - Transient Thermal Impedance, Junction to AmbientFig. 10 - Reverse Recovery Waveform and Thermal Impedance ( C/W)t1- Rectangular Pulse Duration (s)Single pulseTypical, junction to caseSteady state value (DC) Thermal Impedance ( C/W)t1- Rectangular Pulse Duration (s)Single pulseTypical, junction to ambientSteady state value (DC) IRRMdi(rec) IRRMIRRM trrtbtaIFdiF/dt0(1)(2)(3)(4)(5)(1) diF/dt - rate of change of current through zero crossing(2) IRRM - peak reverse recovery current(3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through IRRM and IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM trr x IRRM 2 Qrr =(5) di(rec)M/dt - peak rate of change of current during tb portion of Semiconductors Revision: 04-Feb-20195 Document Number: 94979 For technical questions within your region: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE.

6 THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT INFORMATION TABLEORDERING INFORMATION (Example)PREFERRED P/NQUANTITY PER REELMINIMUM ORDER QUANTITYPACKAGING DESCRIPTIONVS-4 ESH02HM3/86A150015007" diameter plastic tape and reelVS-4 ESH02HM3/87A6500650013" diameter plastic tape and reelLINKS TO RELATED marking rating (4 = 4 A)3-Circuit configuration: 4-S = SMPC package5-Process type, H = Hyperfast recovery6-Voltage code (02 = 200 V)-H = AEC-Q101 qualified7-M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free8 Device code51324687VS-4 ESH02M3H1- Vishay Semiconductors product E = single diodeOutline Semiconductors Revision: 03-Sep-141 Document Number: 95570 For technical questions within your region: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT (SMPC)DIMENSIONS in inches (millimeters)Conform to JEDEC ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) Pad ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( )K 2 1 Legal Disclaimer Revision: 01-Jan-20191 Document Number: 91000 Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

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