I. GaAs Material Properties

Mobility is an important parameter for carrier transport because it describes how strongly the motion of an electron is influenced by an applied electric field. From the equation above, it is evident that mobility is related directly to the mean free time ... The resistivity of the semiconductor can be controlled by

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  Transport, Carrier, Resistivity, Carrier transport

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Chapter 4. Basic Failure Modes and Mechanisms

parts.jpl.nasa.gov

This failure mode is generally observed in devices subjected to an accelerated life test or to high operating temperatures. The degradation is observed as an increase in the gate leakage current over the duration of the test. No experimentally identified failure mechanisms have been linked to this failure mode, but surface-state effects have been

  Basics, Dome, Chapter, Failure, Chapter 4, Failure mode, Mechanisms, Basic failure modes and mechanisms

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Lecture 3 - MIT

web.mit.edu

6.012 Spring 2007 Lecture 3 12 Fick’s first law-Key diffusion relationship Flux ≡number of particles crossing a unit area per unit time [cm-2 • s-1] For Electrons: Fn =−Dn dn dx D measures the ease of carrier diffusion in response to a concentration gradient: D ↑⇒Fdiff ↑ D limited by vibration of lattice atoms and ionized dopants.

  Carrier

1.2 Low Temperature Properties of Materials

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Transport Properties: Thermal conductivity, Electrical conductivity Mechanical Properties: Strength, modulus or compressibility, ductility, toughness Superconductivity Many of the materials properties have been recorded and models exist to understand and characterize their behavior Physical models Property data bases (Cryocomp®) NIST:

  Transport

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