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I. GaAs Material Properties - NASA
misplaced atoms, intentionally introduced dopant impurities, and impurities introduced inadvertently during the material growth process. The study of point defects is important because of the effect these defects have on the electronic properties of the material and the strong relationship between diffusion and the number and type of defects in the
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Chapter 4. Basic Failure Modes and Mechanisms
parts.jpl.nasa.govThis failure mode is generally observed in devices subjected to an accelerated life test or to high operating temperatures. The degradation is observed as an increase in the gate leakage current over the duration of the test. No experimentally identified failure mechanisms have been linked to this failure mode, but surface-state effects have been
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