IGBTの特性 - el.gunma-u.ac.jp

1 1 igbt 1 2017 12 9 2 1. 2. 3. 4. Safe Operating Area 6. 7. 8. 9. 10. igbt 11. 80 2008 3 24 B. Jayant Baliga, Fundamentals of Power Semiconductor Devices, Springer Science + Business Media, MOSFET 200V igbt MOSFET4 igbt P- +P MOSFET N+P+N 1d 5 igbt MOS SOA / 300V MOSFET 6 igbt PiN VG VDS VT MOSFET MOSFET PNP Tr PNP Tr GVCEICEV MOSFET 7 igbt Rs P- RS NPN RS NPN Tr igbt PNP Tr PNP Tr MOSFET ()()

2 NPNPNPRSNPNERSEECBENPNCEPNPBIIIIIIIIIII + = +=== =1,,1121212211 NMOSFETNPNPNPRS1CI2 EIPNP NPN 21 CBII=2 BIRSI1EI1EI 8 =BVCEO P+ N- P- N- d1 LP V PDmLqNVd+= 21 9 N- P- J2 P- MOSFET P- N+ DMOS DMOS P+ N- J1 J2 J1 AC DC N 2 Ex. N DB 1016 1017cm-3 10 15 m10 igbt igbt )cm( = =qENdDCSBB 2J1J2J1J3J3J +PP+NN2d1d1d+PP+NNN DB DB P+ 11 PiN MOSFETPNP MOSFET 102 103 12 igbt PiN MOSFET P- +P MOSFET N+P+N PiN CI 13 PiN MOSFET ()()()()()() = = = + = aLdaaMkTqVaaaaTGOXnsCHCaiaCFLdeqkTLdLdqk TVeLdLdLdLdFVVZCLILdFnqWZDdIqkTVaM for 83 for PiN MOSFET d d1/2 W igbt Z MOSFET 14 F d/La PiN + F d/La Fd/La 1 + + + + VF V) JC A/cm2 + + + + +04 Ron,sp m cm2 Jc( igbt )Jc(max)Ron,sp( igbt )Ron,sp(ideal DMOS)

3 igbt I-V PiN MOSFET 600V igbt Tj =200 C Ron,sp MOSFET IGBT16 igbt MOSFET ePNPPNPhII = 1ePNPehEIIII =+= 11( )aTPNPL lcosh1= ::aLlMOSFETPNP P- +P N+P+N hIeIEICI 17 MOSFET ()()()TGOXnsCHCPNPaiaCFVVZCLILdFnqWZDdIq kTV + = 12ln2 PiN MOSFET N PiN MOSFET VF MOSFET VF PiN MOSFET MOSFET ICMOSFET PiN MOSFET ICMOSFET ()CPNPI 118 MOSFET 2 MOSFET Ie MOSFET: ()2,211 TGCH oxnsPNPsatCVVLZCI = ()TGCH oxnsPNPmsVVLZCg = 11()22 TGCH oxnseVVLZCI = ms igbt ms MOSFET PNP MOSFET PNP PNP N ( )DCSDaTPNPqNVdWdlLl 2 ,cosh111 = == ( )( )[]eCaDSaaPNPeCCCCIVLqNLlLlIdVddVdIr2221 coshsinh11 = ==l20 igbt PNP lDWl P- +P N+N +P21 igbt 1d P- +P N+N N 2dJ1J2+P N PNP J1 La 22 HLaaHLHLDLLL pdxpd === ,0222()[]()aapaLdLxdqDJLxp11coshsinh2)( =0010)0( ,)0()()0( ,0)(pJJJxpppdpnp == == ()

4 ApaxpLdqDJLpdxdpqDJ100tanh22= ==23 () == 1cosh121201apadSLdDJLpdxqQ P- +P N+N +PIGBT0pxPiN0 x=0 0 x=0 pn pn 1dp 24 pn pn = = =+ +aiDpaNPDiNNNPLdnNqDJLqkTVNnpppqkTV12200 0tanh2ln ,ln V +NPVACCJFETCHMOSFETMOSFETMNPIGBTVVVVVVVV ++=++=+ ,25 N 0 d1 ()()()dxdppqkTqpJxEpnpnpn1)( + +=)()(xpxn=()()() + + +=apnpnaapnpMLdLdLdqkTV111sinhln2tanhlnc osh2 npJJJ+= :V MV26 MOSFET MOSFET JFET ()()TGoxnsCellCHPNPCHVVCWJLV = 1() ()()00221 WXLWWXJVPGCellPPNPJFETJFET + = ()()()TACCGoxnACellPGPNPACCVVCWXLJKV = 21 igbt ::P:0 CellPWWX JFET VJFET JFET W0 VJFET JFET 27 P- +P N+N +P 2hIeI1hISR1J3J2J Ie MOSFET Ih1 J1 J2 Rs J3 Rs Vbi NPN PNP NPN = 1 28 PNP PNP Tr T N PNP Tr J1 N NDB / N ( )

5 ATLlcosh1= Ih1 Rs = DBAENnEnEpBENNWLDD N N 29 NPN NPN Tr P+ P- J3 P+ P- P+ N+ P- N+ N+ MOSFET N+ MOSFET P+ igbt 30 P+ ()21 ESPESBPNPC ellbiCLLRLRWVJ++= ()()CellCLCLESPESBPNPbiSPNPbiCLhPNPhCbiS hESPESBSZWIJLRLRZVRVIIIIVRIZLRLRR=+====+ =++2121121:: P- +P N +P2EL1 ELEL+NCellWSBR1hI+SPR 1 ESBLR 31 P+ P- +P N +P+N NP- +N+P +P P+ N+ P- 32 P- N +P+N+N+P+P 1hI2hIeI 2 1/2 33 N VT P- N +P+N+P P- VT 3402004006008001,0001,2001,4000200400600 8001,0001,2001,400tox JCL (A/cm2) 4 APoxTNtV ()TGoxnsoxCHCHVVZtLR = 35 igbt +=WGGPNPChLLLII 1 GLWL P- 1hI1hI +=GWGESBPNPbiLINCLLLLLRZVI1, ZLRRESBS1=()

6 GESBPNPbiWGLINCLLINCLLLRVLLZIJ1,, =+=36 igbt ()[]()[]122,ln42 EWWWWGSBPNPbiCIRCLLLLLLLRVJ += GL P- 1hI1hIWL()()222144 WGWWGPNPChLLLLLIJ+ += == 1ln221 EWWSBLLLSBSLLLRdrrRRWEW ()()[]()[]1222,ln48 EWWWWGWGSBPNPbiCIRCLLLLLLLLLRVI ++= 37 igbt CIRCLSQCLJJ,,<GL P- 1hI1hIWL P- 38 igbt ALL GLWL 1hI1hI P- ()2214 WGGPNPChLLLII+= +== +GEGSBLLLSBSLLLRdrrRREGG1ln221 ()()[]GEGGWGSBPNPbiALLCLLLLLLLRVI122,ln8 ++= ()[]GEGGSBPNPbiALLCLLLLLRVI12,ln2+= , , m1 , m8 , m8,,,,1 ===LINCLALLCLLINCLCIRCLSBPNPEWGJJJJRLLL 39 igbt ()DWGGPNPChLLLLII++=21 () ++=1,2 EGDWGSBPNPbiDCLLLLLLRZVI ZLRRESBS1=()GESBPNPbiDWGDCLDCLLLRVLLLZIJ 1,,2 =++= N +P+N+P+P1hI2hI3hI1J2J3J4J P- WLGLDLP- 40 SOA Safe Operating Area PTIGVONVONISVSVtt FBSOARBSOA FBSOA Forward Biased SOA RBSOA Reverse Biased SOA 41 FB SOA nsatnpsatPDqvJqvJNN,, +=+ SOA N +P+N+PP- ( ) + =NBVSOA 1=MT ( )aTLlcosh1= ()[]11 =nSOABVVM PNP BVSOA ND igbt 42 RB SOA igbt BVSOA.

7 ,,CpsatCDJqvJNN+=+P- N RBSOA FBSOA BVSOA RBSOA FBSOA psatCDqvJN, 43, =CpsatSOAJqVBV1=MT 4305001,0001,5002,0002,5003,0003,5000200 4006008001000 V) A/cm2) RB SOA RBSOA PNP pnp= PNP pnp= 44 RB SOA igbt p igbt NPN n igbt PNP SOAp igbt n igbt n p SOAp igbt n igbt 45 RBSOA DMOS N +P+N+PP- RBSOA P- P- ALL P- P- N 46 SOA igbt RBSOA FBSOA SOA 47 ()HLHLtCPNPtCCPNPhCDCCPNPeCDeIeItIIIIIII II ==== = ==010010)(1 ()

8 PNPHL offt 10ln= Ie Ih: CVCIFV 48 HL PNP ICD off ()01 CPNPeCDIII == PNP 0CI0CI21offofftt>21 CDCDII<49 / PNP 2121ttIICC> <()221 CPNPeCDIII == < < < 2 CDI 50 5 20ms 1kHz 10kHz 100 500nsUPS 20kHz 100kHz 51 igbt + + +02 s V IGBTNon-punch through IGBTP unch through 600VJ=100 A/cm2 PNP + + + + + + + + +08 Hz W/cm2 igbt .

9 600V s 200kHz igbt MOSFETJ=100 A/cm2 50 IGBTMOSFET53 AC n IGBTp IGBTCGVEGCCEE n IGBTn IGBTGVCEGVCE1G2 GCE igbt MOSFET P N + + +02 s V) p n igbt p IGBTn igbt igbt ,Non-punch through 600VJ=100 A/cm2 55 MOSFET vs. igbt A/cm2 V) MOSFET300V600V1200V300V600V1200V MOSFET RON igbt RON + + +02 s V) 1200V600V300V igbt , Non-punch through J=100 A/cm2 1/La d1 La V) A/cm2 T 300KT 350KT 400K :600 VPN RON MOSFET C J 30 (A/cm2) J 60 (A/cm2)J 150 (A/cm2).

10 600V igbt 5921offofftt<21 CDCDII> HL PNP ICD toff ()01 CPNPeCDIII == PNP CICI 60 1015202530050100150200 K s igbt 600V61 UMOS igbt 2mW2tW+PhI+N N +PP- eIN UMOS JFET MOSFET PNP MOSFET MOSFET DMOS UMOS DMOS UMOS P- UMOS P+ DMOS P+ 62 UMOS igbt ()()CtmPNPhNmNSJWWZIXWXZR2 ,22P+= =+++ biShVRI= + =+++tmNmNPNPbiUMOSCLWWXWXVJ2P, ()UMOSCellDMOSCellNNmESPESBDMOSCLUMOSCLW WXXWLRLRJJ,,P21,,22 +=++++ 8cm ,,,,P = =+DMOSCLUMOSCLDMOSCellUMOSCellJJWW 63 1980 igbt MOSFET20 100V 100 400V MOSFET600V 900V IGBT400 600 1200V igbt Si SiC IEGT Injection-Enhanced igbt CSTBT Carrier Stored Trench-Gate Bipolar Transistor IC Lateral igbt