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Interconnections: Silicides - Stanford University

Stress after deposition Stres after anneal Etch rate variation due to stress Electrical resistivity ρ, stress Δσdep after deposition, stress change Δσsint during sintering and etch rate Retch in CF4 of evaporated TaSi2 films as a function of increasing O2 partial pressure in the residual gas.

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  Stress, Residual

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