IR Sensor Module for Remote Control Systems - …

1 Semiconductors Rev. , 23-Apr-20191 Document Number: 82486 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT Sensor Module for Remote Control SystemsDESIGN SUPPORT TOOLS AVAILABLEMECHANICAL DATAP inning:1 = carrier OUT, 2 = GND, 3 = VSFEATURES Photo detector and preamplifier in one package AC coupled response from 30 kHz to 60 kHz, all data formats If the IR signal strength is more than 1000 mW/m2 (distance less than m with a typical IR Remote Control ), the frequency range is limited to 55 kHz Improved shielding against electrical field disturbance AGC to suppress ambient noise High sensitivity, long receiving range Supply voltage: V to V Carrier out signal for IR repeater applications Material categorization.

2 For definitions of compliance please see TSMP58138 is a miniaturized Sensor for receiving the modulated signal of infrared Remote Control Systems . A PIN diode and preamplifier are assembled on a lead frame, the epoxy package is designed as an IR filter. The modulated output signal, carrier out, can be used for repeater applications and code learning component has not been qualified according to automotive DIAGRAMAPPLICATION CIRCUIT190261232333DD3D3D ModelsPARTS TABLEC arrier frequency38 kHzTSMP58138 PackageMinicastPinning1 = carrier OUT, 2 = GND, 3 = VSDimensions (mm)

3 W x H x DMountingLeadedApplicationRepeater33 k 231 VSOUTC ompa-GNDpassAGCI nputPINB andratorControl circuit16833_10 Recommended circuit for best sensitivity in repeater limits the output voltage swing VO to about V in order to avoid internal FTSMP xxxxxSupplyvoltage+3 V or +5 VGND0 V100 680 3 TSAL640033 k In case of a supply voltage of 3 V, use one IR emitter only47 Semiconductors Rev. , 23-Apr-20192 Document Number: 82486 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device.

4 This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect the device reliabilityTYPICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified)Fig. 1 - Output FunctionFig. 2 - Frequency Dependence of SensitivityABSOLUTE MAXIMUM RATINGSPARAMETERTEST CONDITIONSYMBOLVALUEUNITS upply voltage (pin 3) to +6 VSupply current (pin 3)IS5mAOutput voltage (pin 1) to at output to supplyVS - to (VS + )VOutput current (pin 1)IO5mAJunction temperatureTj100 CStorage temperature rangeTstg-25 to +85 COperating temperature rangeTamb-25 to +85 CPower consumptionTamb 85 CPtot10mWSoldering temperaturet 10 s, 1 mm from caseTsd260 CELECTRICAL AND OPTICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified)

5 PARAMETERTEST current (pin 3)Ev = 0, VS = 5 = 40 klx, distanceEv = 0, test signal see Fig. 1,IR diode TSAL6200, IF = 50 mAd-7--mOutput voltage low (pin 1)IOSL = mA, Ee = mW/m2,test signal see Fig. 1 VOSL--100mVMinimum irradianceLess than 5 missing or 5 additional sub carrier pulses related to one burstEe irradianceLess than 5 missing or 5 additional sub carrier pulses related to one burstEe of half transmission distance 1/2- 45- degVO VOHVOLtpi 6 carrier cycles is recommended for optimum functiontEetpi - burst lengthOptical Test Signal:IR diode TSAL6200, IF = A,N = 15 carrier pulses per burst, f = 38 kHz,burst repetition time.

6 3 mstThe number of carrier- out-pulses might not be exactlysame as the number of carrier cycles in tpi (input burst)216480123456730354045505560fo - Carrier Frequency (kHz)Ee min. - Detection Threshold (mW/m ) Semiconductors Rev. , 23-Apr-20193 Document Number: 82486 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT 3 - Relative Spectral Sensitivity vs. WavelengthFig. 4 - Horizontal DirectivityFig. 5 - Vertical ( )rel - Relative Spectral Sensitivity - Wavelength (nm)115094 30 10 20 40 50 60 70 80 - Relative Transmission Distance19259 30 10 20 40 50 60 70 80 Relative Transmission Semiconductors Rev.

7 , 23-Apr-20194 Document Number: 82486 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT DIMENSIONS in ( ) max.( ) (4) : : 12; to DINtechnical drawingsNot indicated to lerances areaR 2R 219009 Legal Disclaimer Revision: 01-Jan-20191 Document Number: 91000 Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. vishay Intertechnology, Inc.

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